JPS5963707A - Magnetic thin film body - Google Patents
Magnetic thin film bodyInfo
- Publication number
- JPS5963707A JPS5963707A JP57174910A JP17491082A JPS5963707A JP S5963707 A JPS5963707 A JP S5963707A JP 57174910 A JP57174910 A JP 57174910A JP 17491082 A JP17491082 A JP 17491082A JP S5963707 A JPS5963707 A JP S5963707A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- thin film
- composition
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は磁気異方性の制御された強磁性薄膜体に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a ferromagnetic thin film with controlled magnetic anisotropy.
従来例の構成とその問題点
最近、信号磁界の周波数にかかわらず大きな出力が得ら
れることから、強磁性薄膜の磁気抵抗効果を利用した各
種磁気センサや磁気ヘッドが実用化されている。この磁
気抵抗効果は、強磁性薄膜の磁化方向と電流のなす角を
θ、比抵抗をρとすると、
ρ＝ρ０＋ΔρＣＯ３２θ
という関係式で表わされる。磁化の方向は軸異方性を有
する薄膜の場合、異方性磁界程度の大きさの外部磁界で
飽和にまで磁化回転する。異方性磁界の大きさは、磁場
中蒸着したパーマロイ膜の場合数エルステッドであるか
ら、外部信号磁界がそれより大きい場合、磁化は同一方
向に飽和して抵抗値が変化しなくなるので、用途に応じ
ているいろな大きさの異方性磁界を有する膜が要望され
ている。Conventional configurations and their problems Recently, various magnetic sensors and magnetic heads that utilize the magnetoresistive effect of ferromagnetic thin films have been put into practical use because large outputs can be obtained regardless of the frequency of the signal magnetic field. This magnetoresistive effect is expressed by the relational expression ρ=ρ0+ΔρCO32θ, where θ is the angle between the magnetization direction of the ferromagnetic thin film and the current, and ρ is the specific resistance. In the case of a thin film having axial anisotropy, the direction of magnetization is rotated to saturation by an external magnetic field of approximately the same magnitude as the anisotropic magnetic field. The magnitude of the anisotropic magnetic field is several oersteds in the case of a permalloy film deposited in a magnetic field, so if the external signal magnetic field is larger than that, the magnetization will be saturated in the same direction and the resistance value will not change, making it suitable for the application. There is a need for films with anisotropic magnetic fields of various magnitudes that are compliant.
しかし、磁場中蒸着法では異方性磁界の大きさの制御は
困難であり、斜め蒸着の入射角で異方性を制御する方法
では再現性に問題がある。また基板に凹凸を形成しその
上に強磁性膜を形成して異方性を利−１１するという方
法では磁気ヘッドとして磁気テープと摺動して用いる場
合には膜の強度に問題があった。However, in the magnetic field deposition method, it is difficult to control the magnitude of the anisotropic magnetic field, and in the method of controlling the anisotropy by the incident angle of oblique deposition, there is a problem in reproducibility. Furthermore, with the method of forming irregularities on a substrate and forming a ferromagnetic film on top of it to take advantage of anisotropy, there was a problem with the strength of the film when it was used as a magnetic head by sliding on a magnetic tape. .
発明の目的
本発明はこれら従来の異方性制御方法の欠点を解消し、
安定かつ希望の大きさの異方性を有する磁性薄膜を得る
ことを目的とするものである。OBJECTS OF THE INVENTION The present invention eliminates the drawbacks of these conventional anisotropy control methods,
The purpose is to obtain a magnetic thin film that is stable and has anisotropy of a desired magnitude.
発明の構成
本発明は、膜の組成を周期的に異ならせることにより、
磁性薄膜体の磁気異方代金制御するとともに、その組成
を選ぶことによりイＩＢ気異方性の大きさを設定するこ
とができる。Structure of the Invention The present invention provides the following features: By periodically changing the composition of the film,
By controlling the magnetic anisotropy of the magnetic thin film and selecting its composition, the magnitude of the IB anisotropy can be set.
実施例の説明
以下、本発明の強磁性薄膜体について、実施例にもとづ
いて説明する。Description of Examples The ferromagnetic thin film body of the present invention will be described below based on Examples.
第１図はその一実施例を示す。同図Ａに示すように、た
とえばガラスなどからなる基板２−にに強磁性膜１を形
成する。薄膜材料としてはたとえばパーマロイを使用し
、薄膜形成には真空蒸着法、スパッタ法あるいはメッキ
法といった一般に使用されている方法を用いる。強磁性
膜１を形成した後、その上に縞状のフォトレジストパタ
ーン３をフォトリソグラフィ法により形成する。各部の
寸法の一例を示すと、強磁性薄膜１の厚さ５００人、レ
ジストパターン３の巾８μｍ１そのピッチ１０μｍであ
る。次にこのレジストパターン３をマスクとして強磁性
膜１に非磁性元素イオンたとえばクロムを打ち込む。同
図（Ｂ）に示すように、この打込捷れたイオン４により
、強磁性膜の一部は縞状に組成が変化し、その部分の透
磁率が低下する。このため強磁性膜１としては形状異方
性を生じ矢印入方向に磁化容易軸を示す磁気異方性を生
じる。−例として第１図のレジストパターン３を用いク
ロムを加速電圧５０ ＫｅＶで約１０１５イオン／ ｃ
ｎｔ打ち込んだところ、図（Ｂ）の矢印の方向に磁化容
易軸を治し、約２５エルステツドの異方性磁界を有する
パーマロイ膜が得られた。FIG. 1 shows one embodiment. As shown in FIG. 1A, a ferromagnetic film 1 is formed on a substrate 2- made of, for example, glass. Permalloy, for example, is used as the thin film material, and commonly used methods such as vacuum evaporation, sputtering, or plating are used to form the thin film. After forming the ferromagnetic film 1, a striped photoresist pattern 3 is formed thereon by photolithography. To give an example of the dimensions of each part, the thickness of the ferromagnetic thin film 1 is 500 mm, the width of the resist pattern 3 is 8 μm, and the pitch is 10 μm. Next, using this resist pattern 3 as a mask, non-magnetic element ions such as chromium are implanted into the ferromagnetic film 1. As shown in FIG. 4B, the implanted ions 4 change the composition of a part of the ferromagnetic film in a striped manner, and the magnetic permeability of that part decreases. Therefore, the ferromagnetic film 1 exhibits shape anisotropy and magnetic anisotropy with an axis of easy magnetization in the direction of the arrow. - As an example, using the resist pattern 3 in FIG.
When nt was implanted, the axis of easy magnetization was adjusted in the direction of the arrow in Figure (B), and a permalloy film having an anisotropic magnetic field of about 25 oersted was obtained.
第２図は本発明の他の実施例を示す。図に示すように、
基板２上に真空蒸着で形成した１０００人厚のパーマロ
イからなる強磁性膜１の表面に、蒸着、フォトエツチン
グやリフトオフ法で縞状にビスマスやインジウムなどの
温度上昇に伴って膜中に拡散して非磁性化させる薄膜層
５を形成し不活性ガス中で加熱、拡散させる。薄膜層５
の巾を５μｍ、ピッチを１０μｍとした場合綿と平行の
矢印方向に磁化容易軸を有し、８０エルステツドの異方
性磁界をもつ強磁性薄膜が得られた。FIG. 2 shows another embodiment of the invention. As shown in the figure,
On the surface of a ferromagnetic film 1 made of permalloy with a thickness of 1000 mm formed by vacuum evaporation on a substrate 2, bismuth, indium, etc. are formed in stripes by evaporation, photoetching, or lift-off, and are diffused into the film as the temperature rises. A thin film layer 5 to be made non-magnetic is formed, and heated and diffused in an inert gas. Thin film layer 5
When the width was 5 μm and the pitch was 10 μm, a ferromagnetic thin film was obtained with an axis of easy magnetization in the direction of the arrow parallel to the cotton and an anisotropic magnetic field of 80 oersteds.
強磁性薄膜の表面を部分的に非磁性化する方法としては
、酸素プラズマ□による酸化も有効である。Oxidation using oxygen plasma □ is also effective as a method for partially making the surface of a ferromagnetic thin film nonmagnetic.
すなわち、基板上に形成した強磁性薄膜上に縞状にフォ
トレジストマスクを形成した後酸素プラズマ中にて処理
したところ、マスクに罹われない部分は酸化されて非磁
性化し、線方向に磁化容易１１＋を有する磁気異方性を
示した。That is, when a striped photoresist mask is formed on a ferromagnetic thin film formed on a substrate and then treated in oxygen plasma, the parts not covered by the mask are oxidized and become non-magnetic, and are easily magnetized in the linear direction. It exhibited a magnetic anisotropy of 11+.
発明の効果
以上の説明から明らかなように、本発明によれば強磁性
薄膜の組成を周期的に異ならせてし）るので、任意の方
向に希望の大きさの異方性磁界を形成することができる
。また、基板に凹凸を形成し、その表面に強磁性薄膜を
形成した場合と比較して、強磁性薄膜に凹凸がないので
、磁気記録媒体に摺させたことによる膜のフローや湿度
による劣化膜などが起きにくく信頼性の高い磁気ヘッド
や磁気センサーを実現することかできる０Effects of the Invention As is clear from the above explanation, according to the present invention, the composition of the ferromagnetic thin film is periodically varied, so an anisotropic magnetic field of desired magnitude can be formed in any direction. be able to. In addition, compared to the case where a substrate is formed with unevenness and a ferromagnetic thin film is formed on the surface, the ferromagnetic thin film has no unevenness, so the film deteriorates due to the flow of the film due to sliding on a magnetic recording medium and humidity. It is possible to create highly reliable magnetic heads and magnetic sensors that are less prone to such problems.
′ 第１図および第２図はそれぞれ本発明の実施
例の磁性薄膜体の製造工程を示す斜視図である。
１・・・・・・強磁性薄膜、２・・・・・・基板、３・
・・・・・フォトレジストパターン、４・・・・・非磁
性元素イメーン、６・・・・・・非磁性化のだめの薄膜
層。1 and 2 are perspective views showing the manufacturing process of a magnetic thin film body according to an embodiment of the present invention. 1...Ferromagnetic thin film, 2...Substrate, 3.
. . . Photoresist pattern, 4 . . . Nonmagnetic element image, 6 . . . Thin film layer for nonmagnetization.
Claims (2)
を異ならせたことを特徴とする磁性薄膜体。(1) A magnetic thin film consisting of a ferromagnetic thin film, characterized in that the composition is periodically varied within the plane of the film.
とする特許請求の範囲第１項に記載の磁１ｉ曾ｔＦ膜体
。(2) The magnetic 1i x tF film body according to claim 1, wherein the regions having different compositions form a striped pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174910A JPS5963707A (en) | 1982-10-04 | 1982-10-04 | Magnetic thin film body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57174910A JPS5963707A (en) | 1982-10-04 | 1982-10-04 | Magnetic thin film body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5963707A true JPS5963707A (en) | 1984-04-11 |
Family
ID=15986829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57174910A Pending JPS5963707A (en) | 1982-10-04 | 1982-10-04 | Magnetic thin film body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5963707A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002011208A3 (en) * | 2000-07-28 | 2002-07-18 | Conexant Systems Inc | Method for fabrication of on-chip inductors and related structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5578515A (en) * | 1978-12-08 | 1980-06-13 | Fujitsu Ltd | Manufacture of magnetic bubble element |
-
1982
- 1982-10-04 JP JP57174910A patent/JPS5963707A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5578515A (en) * | 1978-12-08 | 1980-06-13 | Fujitsu Ltd | Manufacture of magnetic bubble element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002011208A3 (en) * | 2000-07-28 | 2002-07-18 | Conexant Systems Inc | Method for fabrication of on-chip inductors and related structure |
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