JPH1187804A - Thin-film magnetic field sensor - Google Patents
Thin-film magnetic field sensorInfo
- Publication number
- JPH1187804A JPH1187804A JP9279308A JP27930897A JPH1187804A JP H1187804 A JPH1187804 A JP H1187804A JP 9279308 A JP9279308 A JP 9279308A JP 27930897 A JP27930897 A JP 27930897A JP H1187804 A JPH1187804 A JP H1187804A
- Authority
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- Japan
- Prior art keywords
- thin film
- magnetic field
- magnetic
- thin
- film
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁界感度の劣る磁気抵
抗薄膜を軟磁性薄膜の高い飽和磁束密度を利用し、磁界
感度を著しく向上させた磁界センサおよびこれを用いた
磁気ＭＲヘッドに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic field sensor in which a magnetic resistance thin film having a low magnetic field sensitivity utilizes a high saturation magnetic flux density of a soft magnetic thin film to greatly improve the magnetic field sensitivity, and a magnetic MR head using the same. It is.
【０００２】[0002]
【従来の技術】近年、情報の大容量化、高速化に伴い、
磁気記録の分野においても更なる記録密度の高密度化が
進められ、垂直磁気記録方式など様々な試みがなされて
いる。磁気抵抗効果（ＭＲ）を利用したヘッド（ＭＲヘ
ッド）は、上記の要請に対応するものとして注目され、
現在盛んに研究されている。また、ＭＲセンサは、サー
ボモーターやロータリーエンコダーなどの磁界センサと
しても広く利用されている。2. Description of the Related Art In recent years, with the increase in information capacity and speed,
In the field of magnetic recording, the recording density has been further increased, and various attempts such as a perpendicular magnetic recording method have been made. Heads (MR heads) utilizing the magnetoresistive effect (MR) have attracted attention as meeting the above requirements,
Currently being actively studied. In addition, MR sensors are widely used as magnetic field sensors such as servo motors and rotary encoders.
【０００３】このような状況の中で、従来のＭＲ材料の
１０倍以上のもの巨大磁気抵抗効果（ＧＭＲ）を示す材
料が、Ｆｅ／Ｃｒ系などの金属人工格子膜で見出された
（Ｍ．Ｎ．Ｂａｉｂｉｃｈ ｅｔ ａｌ，Ｐｈｙｓ．Ｒ
ｅｖ．Ｌｅｔｔ．６１（１９８８）２４７２）。ＧＭＲ
は、この発見をきっかけに金属人工格子のみならず、Ｍ
ｎ酸化物などの酸化物系、Ｃｏ−Ｃｕ合金などの金属−
金属系グラニュラー合金、またＣｏ−Ａｌ−Ｏ合金薄膜
などの金属−非金属系グラニュラー合金薄膜などで見出
され、現在盛んに研究されている。これらの材料は、Ｍ
Ｒ比が大きいことから磁気ヘッドなどの磁界センサへの
応用が期待されている。しかし、金属人工格子のＧＭＲ
を利用したスピンバルブヘッドの実用化が進められてい
るものの、安定性や歩留まりの悪いことなど、問題は多
い。また、金属人工格子以外の材料においては、磁界感
度が著しく悪く、磁気ヘッドなどの磁界センサに利用す
ることは出来なかった。Under such circumstances, a material exhibiting a giant magnetoresistance effect (GMR) that is ten times or more that of a conventional MR material has been found in a metal artificial lattice film of Fe / Cr or the like (M). N. Baibich et al, Phys.
ev. Lett. 61 (1988) 2472). GMR
Has discovered that not only metal artificial lattices but also M
Oxides such as n-oxides, metals such as Co-Cu alloys-
It has been found in metal-based granular alloys and metal-nonmetallic-based granular alloy thin films such as Co-Al-O alloy thin films, and is currently being actively studied. These materials are M
Because of a large R ratio, application to a magnetic field sensor such as a magnetic head is expected. However, GMR of metal artificial lattice
Although spin valve heads utilizing the technology have been put to practical use, there are many problems such as poor stability and low yield. In addition, materials other than metal artificial lattices have extremely poor magnetic field sensitivity, and cannot be used for magnetic field sensors such as magnetic heads.
【０００４】ＭＲ比が非常に大きいにもかかわらず、磁
界感度が悪い酸化物系ＧＭＲ材料の磁界感度を向上させ
るユニークな方法が、Ｈ．Ｙ．Ｈｗａｎｇ等によって提
案された（Ｈ．Ｙ．Ｈｗａｎｇ ｅｔ ａｌ，Ａｐｐ
ｌ．Ｐｈｙｓ．Ｌｅｔｔ．，６８（１９９６）３４９
４）。それによると、０．１ｍｍ厚のＭｎ酸化物ＧＭＲ
材料を、２つの１．４７×１．４７×２４．２ｍｍ大の
ＭｎＺｎフェライトに挟み、フェライトの高い透磁率を
利用して、見かけ上ＧＭＲの磁界感度を上げることに成
功している。しかしこの報告では、フェライトの飽和磁
束密度が小さいため、十分な磁界感度が得られていない
上に、数ｍｍ以上の大きさのバルク材料を用いており、
ＭＲヘッドなどのマイクロデバイスには用いられていな
い。[0004] A unique method for improving the magnetic field sensitivity of oxide-based GMR materials having a very high MR ratio but low magnetic field sensitivity is disclosed in H.S. Y. (HY Hwang et al, App.
l. Phys. Lett. , 68 (1996) 349.
4). According to this, a 0.1 mm thick Mn oxide GMR
The material is sandwiched between two 1.47 × 1.47 × 24.2 mm MnZn ferrites, and apparently the magnetic field sensitivity of GMR has been successfully increased by utilizing the high magnetic permeability of the ferrite. However, in this report, because the ferrite has a low saturation magnetic flux density, sufficient magnetic field sensitivity has not been obtained, and bulk materials of several mm or more are used,
It is not used for micro devices such as MR heads.
【０００５】[0005]
【発明が解決しようとする課題】以上のように、薄膜Ｇ
ＭＲ材料は、その応用化が期待されているにもかかわら
ず、磁界感度が悪いために、ＭＲヘッドなどの磁界セン
サに用いることが出来なかった。特に、金属−非金属系
グラニュラー合金薄膜は、成膜状態でＧＭＲを示し、ま
た１×１０４μΩｃｍ以上の高い電気比抵抗を有し、小
さな電流で大きな電圧変化が得られるなどの特長を有す
るにもかかわらず、磁界感度が悪いために、センサなど
に用いることはできなかった。As described above, the thin film G
Despite the prospect of its application, MR materials cannot be used for magnetic field sensors such as MR heads due to poor magnetic field sensitivity. In particular, a metal-nonmetallic granular alloy thin film exhibits GMR in a deposited state, has a high electric resistivity of 1 × 10 4 μΩcm or more, and has a feature that a large voltage change can be obtained with a small current. Nevertheless, it could not be used for sensors and the like due to poor magnetic field sensitivity.
【０００６】本発明は、上記の事情を鑑みてなされたも
ので、磁界感度の悪いＧＭＲ薄膜材料を軟磁性薄膜と複
合化し、磁界感度の高いＧＭＲ薄膜磁界センサを提供す
ることを目的とする。The present invention has been made in view of the above circumstances, and has as its object to provide a GMR thin film magnetic field sensor having high magnetic field sensitivity by combining a GMR thin film material having low magnetic field sensitivity with a soft magnetic thin film.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記の事情を
鑑みて鋭意努力した結果である。磁界感度の悪いＧＭＲ
薄膜材料と軟磁性薄膜を図１に示すように同一平面内に
配置し、外部磁界に対する軟磁性膜の高い飽和磁束密度
を利用することによって、ＧＭＲの磁界感度が著しく改
善され、極めて磁界感度の高い薄膜磁界センサを得るこ
とができる。また膜厚が数μｍ以下の薄膜材料を用い、
電子ビームリソグラフィやイオンビームエッチングなど
の微細加工技術を用いることによって、磁界センサのマ
イクロ化に対応することが可能である。本発明の特徴と
するところは次の通りである。SUMMARY OF THE INVENTION The present invention is a result of intensive efforts in view of the above circumstances. GMR with poor magnetic field sensitivity
By arranging the thin film material and the soft magnetic thin film on the same plane as shown in FIG. 1 and utilizing the high saturation magnetic flux density of the soft magnetic film to an external magnetic field, the magnetic field sensitivity of the GMR is remarkably improved, A high thin-film magnetic field sensor can be obtained. Also, using a thin film material having a thickness of several μm or less,
By using a microfabrication technique such as electron beam lithography or ion beam etching, it is possible to cope with the miniaturization of a magnetic field sensor. The features of the present invention are as follows.
【０００８】第１発明は、軟磁性薄膜と巨大磁気抵抗薄
膜とによって構成することにより、磁気抵抗効果の磁界
感度を上げたことを特徴とする薄膜磁界センサに関す
る。The first invention relates to a thin film magnetic field sensor comprising a soft magnetic thin film and a giant magnetoresistive thin film to increase the magnetic field sensitivity of a magnetoresistance effect.
【０００９】第２発明は、巨大磁気抵抗薄膜の両側に軟
磁性薄膜を配置することを特徴とする請求項１に記載の
薄膜磁界センサに関する。The second invention relates to a thin-film magnetic field sensor according to claim 1, wherein soft magnetic thin films are arranged on both sides of a giant magnetoresistive thin film.
【００１０】第３発明は、同一平面内において、巨大磁
気抵抗薄膜の両側に軟磁性薄膜を配置することを特徴と
する請求項１または請求項２に記載の薄膜磁界センサに
関する。A third invention relates to a thin film magnetic field sensor according to claim 1 or 2, wherein soft magnetic thin films are arranged on both sides of a giant magnetoresistive thin film in the same plane.
【００１１】第４発明は、８ｋＧ以上の飽和磁束密度を
有する軟磁性薄膜と、室温で３％以上のＭＲ変化を有す
る巨大磁気抵抗薄膜から構成する請求項１ないし請求項
３のいずれか１項に記載の薄膜磁界センサに関する。According to a fourth aspect of the present invention, the soft magnetic thin film has a saturation magnetic flux density of 8 kG or more and a giant magnetoresistive thin film having an MR change of 3% or more at room temperature. The present invention relates to a thin-film magnetic field sensor described in 1.
【００１２】第５発明は、巨大磁気抵抗薄膜が１×１０
４μΩｃｍ以上の高電気比抵抗を有し、且つ室温で３％
以上のＭＲ変化を有する金属−絶縁体ナノグラニュラー
薄膜であることを特徴とする請求項１ないし請求項３の
いずれか１項に記載の薄膜磁界センサに関する。According to a fifth aspect of the present invention, the giant magnetoresistive thin film is 1 × 10
High electrical resistivity of 4 μΩcm or more and 3% at room temperature
The thin film magnetic field sensor according to any one of claims 1 to 3, which is a metal-insulator nanogranular thin film having the above MR change.
【００１３】第６発明は、請求項１ないし請求項５のい
ずれか１項に記載の薄膜磁界センサからなる磁気ＭＲヘ
ッドに関する。A sixth invention relates to a magnetic MR head comprising the thin-film magnetic field sensor according to any one of claims 1 to 5.
【００１４】[0014]
【作用】本発明の薄膜磁界センサは、二つの軟磁性薄膜
を同一平面内に膜厚の２０倍以下の隙間を隔てて配置
し、その隙間にＧＭＲ薄膜を配置した構造にする必要が
ある。このとき、軟磁性薄膜はどちらか一方のみでも効
果はあるが、上記のようにＧＭＲ薄膜を挟むように両側
配置した構造とする方がより効果的である。この構造を
有することによって、軟磁性薄膜が磁化すると、隙間の
部分に配置されたＧＭＲ薄膜に軟磁性薄膜の磁化に相当
する磁界が作用する。このため、ＧＭＲ薄膜のＭＲ比
は、小さな外部磁界においてほぼ飽和値を示し、磁界感
度が著しく大きくなる。The thin film magnetic field sensor of the present invention needs to have a structure in which two soft magnetic thin films are arranged on the same plane with a gap of 20 times or less the film thickness, and the GMR thin film is arranged in the gap. At this time, although only one of the soft magnetic thin films is effective, it is more effective to adopt a structure in which the GMR thin films are arranged on both sides as described above. With this structure, when the soft magnetic thin film is magnetized, a magnetic field corresponding to the magnetization of the soft magnetic thin film acts on the GMR thin film disposed in the gap. For this reason, the MR ratio of the GMR thin film shows a substantially saturated value in a small external magnetic field, and the magnetic field sensitivity is significantly increased.
【００１５】上記のような効果を得るためには、以下の
ことを考慮しなければならない。一つは、ＧＭＲ薄膜の
両側に配置される軟磁性薄膜の隙間の距離及びその形状
である。隙間が広く軟磁性薄膜どうしの距離が離れすぎ
た場合、軟磁性薄膜から漏れる磁束が分散してしまい、
ＧＭＲ薄膜に十分な磁界が作用しない。このことから、
隙間の間隔は、軟磁性薄膜の膜厚の２０倍以下でなけれ
ばならず、狭ければ狭いほど有効に磁界が作用する。ま
た、膜厚方向で隙間が変化する場合、特に下部に比較し
て上部の隙間が大きい場合には、磁束が分散してしまい
有効な磁界は作用しない。このように、隙間の形状が磁
界センサの性能に大きな影響を及ぼす。軟磁性薄膜およ
びＧＭＲ薄膜は、ＲＦスパッタ法、イオンビームスパッ
タ法、あるいは蒸着法などの成膜法によって作製され、
その厚さは、せいぜい数μｍかそれ以下である。そのた
め、本発明の磁界センサの作製にあたっては、数μｍか
ら１μｍ以下のオーダーの加工精度が求められ、フォト
レジストあるいは電子ビームリソグラフィによるリフト
オフ法、またはイオンビームエッチングなどの半導体な
どに用いられる微細加工技術を用いる必要がある。In order to obtain the above effects, the following must be considered. One is the distance and shape of the gap between the soft magnetic thin films disposed on both sides of the GMR thin film. If the gap is wide and the distance between the soft magnetic thin films is too large, the magnetic flux leaking from the soft magnetic thin film will be dispersed,
Not enough magnetic field acts on GMR thin film. From this,
The space between the gaps must be 20 times or less the thickness of the soft magnetic thin film. The narrower the space, the more effective the magnetic field acts. Further, when the gap changes in the film thickness direction, particularly when the gap at the upper portion is larger than that at the lower portion, the magnetic flux is dispersed and no effective magnetic field acts. Thus, the shape of the gap greatly affects the performance of the magnetic field sensor. The soft magnetic thin film and the GMR thin film are manufactured by a film forming method such as an RF sputtering method, an ion beam sputtering method, or a vapor deposition method.
Its thickness is at most a few μm or less. Therefore, when manufacturing the magnetic field sensor of the present invention, processing accuracy on the order of several μm to 1 μm or less is required, and fine processing technology used for semiconductors such as photoresist or lift-off method using electron beam lithography, or ion beam etching. Must be used.
【００１６】二つは、軟磁性薄膜の磁気特性である。フ
ェライトのように飽和磁束密度が小さい場合は、弱磁界
で磁化して飽和しても、その値が小さいためにＧＭＲ薄
膜に、充分に有効な磁界は作用しない。このため、種々
のＧＭＲ薄膜材料の飽和磁束密度を考慮すると、軟磁性
薄膜の飽和磁束密度は、８ｋＧ以上であることが必要で
ある。Two are the magnetic properties of the soft magnetic thin film. When the saturation magnetic flux density is small, such as ferrite, even if the magnetic field is saturated by weak magnetic field, a sufficiently effective magnetic field does not act on the GMR thin film because the value is small. Therefore, considering the saturation magnetic flux densities of various GMR thin film materials, the saturation magnetic flux density of the soft magnetic thin film needs to be 8 kG or more.
【００１７】さらにＧＭＲ薄膜の特性として、ＭＲ比が
３％より小さい場合は、実用材料であるＭＲ材料のパー
マロイなどと比較して、同程度かそれ以下なので、新し
いＭＲセンサとしての価値がない。一方、ＧＭＲ薄膜の
電気比抵抗が大きい場合には、小さな電流で大きな電圧
変化が得られるために、より大きな出力が得られる。し
たがって、１×１０４μΩｃｍ以上の大きな電気比抵抗
を有する金属−非金属ナノグラニュラー薄膜は、出力の
大きな薄膜磁界センサを得るために必要である。Further, as a characteristic of the GMR thin film, when the MR ratio is less than 3%, it is not as valuable as a new MR sensor because it is about the same as or less than the permalloy of MR material which is a practical material. On the other hand, when the electrical specific resistance of the GMR thin film is large, a large output can be obtained because a large voltage change can be obtained with a small current. Therefore, a metal-nonmetal nanogranular thin film having a large electric resistivity of 1 × 10 4 μΩcm or more is necessary to obtain a thin-film magnetic field sensor having a large output.
【００１８】[0018]
【実施例】以下図面を参照して、本発明の実施例を詳細
に説明する。 〔実施例１〕試料番号０３の薄膜磁界センサの作製 軟磁性薄膜としてパーマロイ（Ｆｅ６５Ｎｉ３５）薄膜
を用い、ＧＭＲ薄膜に試料番号０１のＣｏ３８．６Ｙ
４１．０Ｏ４７．４ナノグラニュラー薄膜を用いて、薄
膜磁界センサを作製した。パーマロイ薄膜およびＣｏ
３８．６Ｙ４１．０Ｏ４７．４ナノグラニュラー薄膜の
作製にはＲＦスパッタ装置を用いた。図２にＣｏ
３８．６Ｙ４１．０Ｏ４７．４薄膜のＭＲ曲線を示す。
ＭＲ曲線は、磁界感度が悪くなかなか飽和にいたらな
い。Embodiments of the present invention will be described below in detail with reference to the drawings. [Example 1] Fabrication of thin film magnetic field sensor of sample No. 03 A permalloy (Fe 65 Ni 35 ) thin film was used as a soft magnetic thin film, and Co 38.6 Y of sample No. 01 was used as a GMR thin film.
A thin film magnetic field sensor was fabricated using 41.0 O 47.4 nanogranular thin films. Permalloy thin film and Co
An RF sputtering apparatus was used to produce 38.6 Y 41.0 O 47.4 nanogranular thin films. FIG.
3 shows the MR curve of a 38.6 Y 41.0 O 47.4 thin film.
The MR curve has poor magnetic field sensitivity and does not readily reach saturation.
【００１９】パーマロイ（Ｆｅ６５Ｎｉ３５）薄膜は、
Ｆｅ６５Ｎｉ３５合金ターゲットをスパッタして作製し
た。膜厚は約２μｍである。さらに、得られた薄膜にイ
オンビームエッチング装置を用いて、幅約９ミクロンの
隙間を作製した。そして、隙間の部分を残して軟磁性薄
膜をマスクし、その部分に、純Ｃｏ円板上にＹ２Ｏ３チ
ップを配置した複合ターゲットをスパッタすることによ
り、図２に示したＭＲ特性を有するＣｏ３８．６Ｙ
４１．０Ｏ４７．４ナノグラニュラーＧＭＲ薄膜を作製
した。これによって、図１に示したようなパーマロイ
（Ｆｅ６５Ｎｉ３５）薄膜とＣｏ３８．６Ｙ４１．０Ｏ
４７．４ＧＭＲ薄膜を同一平面内に配置された薄膜磁界
センサが得られた。図３には、上記の薄膜磁界センサの
磁界に対するＭＲ変化を示す。ＭＲ比は極めて弱い磁界
において急激に変化し、その値は０．５Ｏｅの弱磁界に
おいて約２％であり、良好な磁界感度を示している。図
２に示したＭＲ特性を有するＧＭＲ薄膜を本発明の薄膜
センサに組み込むことによって、磁界感度が大幅に改善
されることがわかる。A permalloy (Fe 65 Ni 35 ) thin film is
It was produced by sputtering an Fe 65 Ni 35 alloy target. The thickness is about 2 μm. Further, a gap having a width of about 9 μm was formed on the obtained thin film by using an ion beam etching apparatus. Then, the soft magnetic thin film is masked while leaving a gap, and a composite target in which a Y 2 O 3 chip is arranged on a pure Co disk is sputtered on the soft magnetic thin film to have the MR characteristics shown in FIG. Co 38.6 Y
A 41.0 O 47.4 nanogranular GMR thin film was prepared. Thereby, the permalloy (Fe 65 Ni 35 ) thin film and Co 38.6 Y 41.0 O as shown in FIG.
47.4 A thin film magnetic field sensor with the GMR thin film arranged in the same plane was obtained. FIG. 3 shows an MR change with respect to a magnetic field of the above-mentioned thin film magnetic field sensor. The MR ratio changes abruptly in an extremely weak magnetic field, and its value is about 2% in a weak magnetic field of 0.5 Oe, indicating good magnetic field sensitivity. It can be seen that the magnetic field sensitivity is greatly improved by incorporating the GMR thin film having the MR characteristics shown in FIG. 2 into the thin film sensor of the present invention.
【００２０】〔実施例２〕試料番号２２の薄膜磁界セン
サの作製 軟磁性薄膜としてＦｅ７１．３Ｎｄ９．６Ｏ１９．１高
電気抵抗ナノグラニュラー薄膜を用い、ＧＭＲ薄膜には
実施例１と同様に試料番号０１のＣｏ３８．６Ｙ
４１．０Ｏ４７．４ナノグラニュラー薄膜を用いて、薄
膜磁界センサを作製した。Ｆｅ７１．３Ｎｄ９．６Ｏ
１９．１薄膜およびＣｏ３８．６Ｙ４１．０Ｏ４７．４
薄膜の作製には実施例１と同様に、ＲＦスパッタ装置を
用いた。[Example 2] Preparation of thin film magnetic field sensor of sample No. 22 Fe 71.3 Nd 9.6 O 19.1 high electric resistance nano-granular thin film was used as a soft magnetic thin film, and a GMR thin film was the same as in Example 1. Co 38.6 Y of Sample No. 01
A thin film magnetic field sensor was fabricated using 41.0 O 47.4 nanogranular thin films. Fe 71.3 Nd 9.6 O
19.1 Thin Film and Co 38.6 Y 41.0 O 47.4
An RF sputtering apparatus was used for the production of the thin film, as in Example 1.
【００２１】Ｆｅ７１．３Ｎｄ９．６Ｏ１９．１薄膜
は、純Ｃｏ円板上にＮｄ２Ｏ３チップを配置した複合タ
ーゲットをスパッタすることにより作製した。膜厚は約
２μｍである。その他の作製法は実施例１と同様であ
る。図４には、上記の薄膜磁界センサの磁界に対するＭ
Ｒ変化を示す。ＭＲ比は極めて弱い磁界において急激に
変化し、その値は１Ｏｅの弱磁界において約２．１％で
あり、良好な磁界感度を示している。The Fe 71.3 Nd 9.6 O 19.1 thin film was prepared by sputtering a composite target having a Nd 2 O 3 chip disposed on a pure Co disk. The thickness is about 2 μm. Other manufacturing methods are the same as in the first embodiment. FIG. 4 shows the relationship between the magnetic field of the thin film magnetic field sensor and the
R change is shown. The MR ratio changes abruptly in an extremely weak magnetic field, and its value is about 2.1% in a weak magnetic field of 1 Oe, indicating good magnetic field sensitivity.
【００２２】表１には、本発明の薄膜磁界センサにおい
て、様々な軟磁性薄膜とＧＭＲ薄膜を組み合わせた場合
の１ＯｅにおけるＭＲ比を示した。表に見られるよう
に、ＧＭＲ薄膜が単独な場合（比較例）より、本発明の
薄膜磁界センサのＭＲ比の方が著しく向上していること
が判る。Table 1 shows the MR ratio at 1 Oe when various soft magnetic thin films and GMR thin films were combined in the thin film magnetic field sensor of the present invention. As can be seen from the table, it can be seen that the MR ratio of the thin film magnetic field sensor of the present invention is significantly improved as compared with the case where the GMR thin film is used alone (Comparative Example).
【００２３】[0023]
【表１】 [Table 1]
【００２４】表１に示した軟磁性薄膜はいずれも８ｋＧ
以上の飽和磁束密度を有し、ＧＭＲ薄膜は１０ｋＯｅで
３％以上のＭＲ比と１×１０４μΩｃｍ以上の電気比抵
抗を有する。表２に示されたいずれのセンサも弱磁界で
大きなＭＲ比を有し、大きな磁界感度を示す。The soft magnetic thin films shown in Table 1 were all 8 kG.
Having the above saturation magnetic flux density, the GMR thin film has an MR ratio of 3% or more at 10 kOe and an electric resistivity of 1 × 10 4 μΩcm or more. Each of the sensors shown in Table 2 has a large MR ratio at a weak magnetic field and shows a large magnetic field sensitivity.
【００２５】上記の通り、本発明の薄膜磁界センサは、
ＭＲ比の磁界感度が優れているので、磁気ＭＲヘッドに
も好適である。As described above, the thin film magnetic field sensor of the present invention
Since the magnetic field sensitivity of the MR ratio is excellent, it is also suitable for a magnetic MR head.
【００２６】[0026]
【発明の効果】本発明の薄膜磁界センサは、軟磁性薄膜
とＧＭＲ薄膜とから構成することにより、ＧＭＲの磁界
感度が著しく向上する。ＧＭＲ材料を用いることによっ
て、現在使用されているパーマロイなどを使用したＭＲ
磁界センサに比べて大きな出力が得られ、また薄膜材料
と微細加工技術を用いているので、磁界センサ素子のマ
イクロ化にも対応することができ、その工業的意義は大
きく、磁気ＭＲヘッドなどにも好適である。The thin-film magnetic field sensor according to the present invention comprises a soft magnetic thin film and a GMR thin film, whereby the magnetic field sensitivity of the GMR is remarkably improved. By using GMR material, MR using permalloy or the like currently used
Higher output is obtained compared to magnetic field sensors, and the use of thin-film materials and microfabrication technology makes it possible to cope with miniaturization of magnetic field sensor elements. Are also suitable.
【図１】本発明の薄膜磁界センサの構造を示す斜視図で
ある。FIG. 1 is a perspective view showing the structure of a thin-film magnetic field sensor according to the present invention.
【図２】Ｃｏ３８．６Ｙ４１．０Ｏ４７．４ナノグラニ
ュラーＧＭＲ薄膜の磁界とＭＲ比の関係を示す特性図で
ある。FIG. 2 is a characteristic diagram showing a relationship between a magnetic field and an MR ratio of a Co 38.6 Y 41.0 O 47.4 nanogranular GMR thin film.
【図３】軟磁性薄膜にＦｅ６５Ｎｉ３５薄膜、ＧＭＲ薄
膜にＣｏ３８．６Ｙ４１．０Ｏ４７．４ナノグラニュラ
ー薄膜を用いた場合の本発明センサの磁界とＭＲ比の関
係を示す特性図である。FIG. 3 is a characteristic diagram showing the relationship between the magnetic field and the MR ratio of the sensor of the present invention when the Fe 65 Ni 35 thin film is used as the soft magnetic thin film and the Co 38.6 Y 41.0 O 47.4 nanogranular thin film is used as the GMR thin film. It is.
【図４】軟磁性薄膜にＦｅ７１．３Ｎｄ９．６Ｏ
１９．１高電気抵抗ナノグラニュラー薄膜、ＧＭＲ薄膜
にＣｏ３８．６Ｙ４１．０Ｏ４７．４ナノグラニュラー
薄膜を用いた場合の本発明センサの磁界とＭＲ比の関係
を示す特性図である。FIG. 4 shows Fe 71.3 Nd 9.6 O on a soft magnetic thin film.
It is a characteristic view which shows the relationship between the magnetic field and MR ratio of the sensor of this invention at the time of using Co 38.6 Y 41.0 O 47.4 nano granular thin film for 19.1 high electric resistance nano granular thin film and GMR thin film.
Claims (6)
て構成することにより、磁気抵抗効果（ＭＲ）の磁界感
度を上げたことを特徴とする薄膜磁界センサ。1. A thin-film magnetic field sensor comprising a soft magnetic thin film and a giant magnetoresistive thin film to increase the magnetic field sensitivity of a magnetoresistance effect (MR).
配置することを特徴とする請求項１に記載の薄膜磁界セ
ンサ。2. The thin film magnetic field sensor according to claim 1, wherein soft magnetic thin films are arranged on both sides of the giant magnetoresistive thin film.
の両側に軟磁性薄膜を配置することを特徴とする請求項
１または請求項２に記載の薄膜磁界センサ。3. The thin film magnetic field sensor according to claim 1, wherein soft magnetic thin films are arranged on both sides of the giant magnetoresistive thin film in the same plane.
性薄膜と、室温で３％以上のＭＲ変化を有する巨大磁気
抵抗薄膜から構成する請求項１ないし請求項３のいずれ
か１項に記載の薄膜磁界センサ。4. The method according to claim 1, comprising a soft magnetic thin film having a saturation magnetic flux density of 8 kG or more, and a giant magnetoresistive thin film having an MR change of 3% or more at room temperature. Thin film magnetic field sensor.
以上の高電気比抵抗を有し、且つ室温で３％以上のＭＲ
変化を有する金属−絶縁体ナノグラニュラー薄膜である
ことを特徴とする請求項１ないし請求項３のいずれか１
項に記載の薄膜磁界センサ。5. A giant magnetoresistive thin film of 1 × 10 4 μΩcm
Having a high electrical resistivity of at least 3% at room temperature
4. A metal-insulator nanogranular thin film having a change.
Item 7. The thin-film magnetic field sensor according to Item 1.
に記載の薄膜磁界センサからなる磁気ＭＲヘッド。6. A magnetic MR head comprising the thin-film magnetic field sensor according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27930897A JP3640230B2 (en) | 1997-09-04 | 1997-09-04 | Thin film magnetic field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27930897A JP3640230B2 (en) | 1997-09-04 | 1997-09-04 | Thin film magnetic field sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1187804A true JPH1187804A (en) | 1999-03-30 |
| JP3640230B2 JP3640230B2 (en) | 2005-04-20 |
Family
ID=17609363
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27930897A Expired - Lifetime JP3640230B2 (en) | 1997-09-04 | 1997-09-04 | Thin film magnetic field sensor |
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| Country | Link |
|---|---|
| JP (1) | JP3640230B2 (en) |
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