AU2001271312A1 - Post etch photoresist strip with hydrogen for organosilicate glass low-k etch applications - Google Patents

Post etch photoresist strip with hydrogen for organosilicate glass low-k etch applications

Info

Publication number
AU2001271312A1
AU2001271312A1 AU2001271312A AU7131201A AU2001271312A1 AU 2001271312 A1 AU2001271312 A1 AU 2001271312A1 AU 2001271312 A AU2001271312 A AU 2001271312A AU 7131201 A AU7131201 A AU 7131201A AU 2001271312 A1 AU2001271312 A1 AU 2001271312A1
Authority
AU
Australia
Prior art keywords
etch
hydrogen
organosilicate glass
photoresist strip
applications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001271312A
Other languages
English (en)
Inventor
Ting Chien
Janet M. Flanner
Ian Morey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2001271312A1 publication Critical patent/AU2001271312A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
AU2001271312A 2000-06-30 2001-06-13 Post etch photoresist strip with hydrogen for organosilicate glass low-k etch applications Abandoned AU2001271312A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/608,251 US6426304B1 (en) 2000-06-30 2000-06-30 Post etch photoresist strip with hydrogen for organosilicate glass low-κ etch applications
US09608251 2000-06-30
PCT/US2001/019175 WO2002003426A2 (en) 2000-06-30 2001-06-13 Process for the post etch stripping of photoresist with hydrogen

Publications (1)

Publication Number Publication Date
AU2001271312A1 true AU2001271312A1 (en) 2002-01-14

Family

ID=24435679

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001271312A Abandoned AU2001271312A1 (en) 2000-06-30 2001-06-13 Post etch photoresist strip with hydrogen for organosilicate glass low-k etch applications

Country Status (8)

Country Link
US (1) US6426304B1 (ko)
EP (1) EP1295315A2 (ko)
JP (1) JP5183850B2 (ko)
KR (1) KR100778260B1 (ko)
CN (1) CN1319133C (ko)
AU (1) AU2001271312A1 (ko)
TW (1) TWI281688B (ko)
WO (1) WO2002003426A2 (ko)

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US6967173B2 (en) * 2000-11-15 2005-11-22 Texas Instruments Incorporated Hydrogen plasma photoresist strip and polymeric residue cleanup processs for low dielectric constant materials
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US7390755B1 (en) 2002-03-26 2008-06-24 Novellus Systems, Inc. Methods for post etch cleans
US6849559B2 (en) * 2002-04-16 2005-02-01 Tokyo Electron Limited Method for removing photoresist and etch residues
KR20050044806A (ko) * 2002-09-18 2005-05-12 맷슨 테크놀로지, 인크. 물질을 제거하기 위한 시스템 및 방법
US6693043B1 (en) 2002-09-20 2004-02-17 Novellus Systems, Inc. Method for removing photoresist from low-k films in a downstream plasma system
US6913994B2 (en) * 2003-04-09 2005-07-05 Agency For Science, Technology And Research Method to form Cu/OSG dual damascene structure for high performance and reliable interconnects
TWI235455B (en) * 2003-05-21 2005-07-01 Semiconductor Leading Edge Tec Method for manufacturing semiconductor device
JP2005064037A (ja) * 2003-08-12 2005-03-10 Shibaura Mechatronics Corp プラズマ処理装置及びアッシング方法
US7202177B2 (en) * 2003-10-08 2007-04-10 Lam Research Corporation Nitrous oxide stripping process for organosilicate glass
US20050272237A1 (en) * 2004-06-03 2005-12-08 Epion Corporation Dual damascene integration structure and method for forming improved dual damascene integration structure
US20070193602A1 (en) * 2004-07-12 2007-08-23 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
US7288484B1 (en) 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US7029992B2 (en) * 2004-08-17 2006-04-18 Taiwan Semiconductor Manufacturing Company Low oxygen content photoresist stripping process for low dielectric constant materials
US7598176B2 (en) * 2004-09-23 2009-10-06 Taiwan Semiconductor Manufacturing Co. Ltd. Method for photoresist stripping and treatment of low-k dielectric material
US7514725B2 (en) * 2004-11-30 2009-04-07 Spire Corporation Nanophotovoltaic devices
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US7202176B1 (en) * 2004-12-13 2007-04-10 Novellus Systems, Inc. Enhanced stripping of low-k films using downstream gas mixing
US7700494B2 (en) * 2004-12-30 2010-04-20 Tokyo Electron Limited, Inc. Low-pressure removal of photoresist and etch residue
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US7479457B2 (en) * 2005-09-08 2009-01-20 Lam Research Corporation Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
US7585722B2 (en) * 2006-01-10 2009-09-08 International Business Machines Corporation Integrated circuit comb capacitor
KR100827435B1 (ko) * 2006-01-31 2008-05-06 삼성전자주식회사 반도체 소자에서 무산소 애싱 공정을 적용한 게이트 형성방법
JP5339679B2 (ja) * 2006-09-28 2013-11-13 富士フイルム株式会社 高融点化合物の除去方法及び設備、溶媒回収方法及び設備、溶液製膜方法及び設備
US7740768B1 (en) 2006-10-12 2010-06-22 Novellus Systems, Inc. Simultaneous front side ash and backside clean
US8435895B2 (en) * 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
JP2009049383A (ja) * 2007-07-26 2009-03-05 Panasonic Corp 半導体装置の製造方法および半導体製造装置
CN101458463B (zh) * 2007-12-13 2011-08-17 中芯国际集成电路制造(上海)有限公司 灰化的方法
US8591661B2 (en) 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
KR101770008B1 (ko) 2009-12-11 2017-08-21 노벨러스 시스템즈, 인코포레이티드 고주입량 주입 박리 전에 실리콘을 보호하기 위한 개선된 패시베이션 공정
US20110143548A1 (en) 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
JP5434970B2 (ja) 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
US8119522B1 (en) 2010-11-08 2012-02-21 International Business Machines Corporation Method of fabricating damascene structures
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
CN102709229A (zh) * 2012-05-22 2012-10-03 上海华力微电子有限公司 一种形成钨塞的方法
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
WO2021011525A1 (en) 2019-07-18 2021-01-21 Mattson Technology, Inc. Processing of workpieces using hydrogen radicals and ozone gas

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JP2000106358A (ja) * 1998-09-29 2000-04-11 Mitsubishi Electric Corp 半導体製造装置および半導体基板の処理方法
JP2000150463A (ja) * 1998-11-16 2000-05-30 Canon Inc 有機層間絶縁膜のエッチング処理方法
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Also Published As

Publication number Publication date
JP5183850B2 (ja) 2013-04-17
KR20030024717A (ko) 2003-03-26
WO2002003426A2 (en) 2002-01-10
US6426304B1 (en) 2002-07-30
JP2004502319A (ja) 2004-01-22
CN1319133C (zh) 2007-05-30
EP1295315A2 (en) 2003-03-26
WO2002003426A3 (en) 2002-06-06
KR100778260B1 (ko) 2007-11-22
CN1449574A (zh) 2003-10-15
TWI281688B (en) 2007-05-21

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