AU2001257191A1 - Optical reduction system with elimination of reticle diffraction induced bias - Google Patents

Optical reduction system with elimination of reticle diffraction induced bias

Info

Publication number
AU2001257191A1
AU2001257191A1 AU2001257191A AU5719101A AU2001257191A1 AU 2001257191 A1 AU2001257191 A1 AU 2001257191A1 AU 2001257191 A AU2001257191 A AU 2001257191A AU 5719101 A AU5719101 A AU 5719101A AU 2001257191 A1 AU2001257191 A1 AU 2001257191A1
Authority
AU
Australia
Prior art keywords
elimination
reduction system
optical reduction
induced bias
diffraction induced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001257191A
Other languages
English (en)
Inventor
Justin L. Kreuzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML US Inc
Original Assignee
ASML US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML US Inc filed Critical ASML US Inc
Publication of AU2001257191A1 publication Critical patent/AU2001257191A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AU2001257191A 2000-04-25 2001-04-25 Optical reduction system with elimination of reticle diffraction induced bias Abandoned AU2001257191A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19939200P 2000-04-25 2000-04-25
US60199392 2000-04-25
PCT/US2001/013139 WO2001082000A1 (en) 2000-04-25 2001-04-25 Optical reduction system with elimination of reticle diffraction induced bias

Publications (1)

Publication Number Publication Date
AU2001257191A1 true AU2001257191A1 (en) 2001-11-07

Family

ID=22737313

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001257191A Abandoned AU2001257191A1 (en) 2000-04-25 2001-04-25 Optical reduction system with elimination of reticle diffraction induced bias

Country Status (6)

Country Link
US (3) US6522483B2 (ko)
EP (1) EP1277088A1 (ko)
JP (1) JP2003532282A (ko)
KR (1) KR100783669B1 (ko)
AU (1) AU2001257191A1 (ko)
WO (1) WO2001082000A1 (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6935747B2 (en) * 1999-04-27 2005-08-30 Optical Products Development Image enhancement and aberration corrections in a small real image projection system
US6798579B2 (en) * 1999-04-27 2004-09-28 Optical Products Development Corp. Real imaging system with reduced ghost imaging
AU2001257191A1 (en) * 2000-04-25 2001-11-07 Silicon Valley Group Inc Optical reduction system with elimination of reticle diffraction induced bias
US20030035086A1 (en) * 2001-08-20 2003-02-20 Robinson Douglas L. Real image projection device incorporating e-mail register
TW575904B (en) * 2001-08-21 2004-02-11 Asml Us Inc Optical projection for microlithography
US20050190446A1 (en) * 2002-06-25 2005-09-01 Carl Zeiss Amt Ag Catadioptric reduction objective
US6731374B1 (en) * 2002-12-02 2004-05-04 Asml Holding N.V. Beam-splitter optics design that maintains an unflipped (unmirrored) image for a catadioptric lithographic system
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
KR101484435B1 (ko) * 2003-04-09 2015-01-19 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI609409B (zh) * 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
JP2005150290A (ja) * 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
US7463422B2 (en) * 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
TWI505329B (zh) 2004-02-06 2015-10-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
DE102004031688B4 (de) 2004-06-30 2006-06-14 Infineon Technologies Ag Verfahren zur Anpassung von Strukturabmessungen bei der photolithographischen Projektion eines Musters von Strukturelementen auf einen Halbleiterwafer
US7271874B2 (en) * 2004-11-02 2007-09-18 Asml Holding N.V. Method and apparatus for variable polarization control in a lithography system
TWI453796B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 偏光變更單元以及元件製造方法
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2660853B1 (en) 2005-05-12 2017-07-05 Nikon Corporation Projection optical system, exposure apparatus and exposure method
KR101324402B1 (ko) * 2005-11-03 2013-11-01 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 프로젝션 노광 장치 및 이 장치의 교정방법
US20070264581A1 (en) * 2006-05-09 2007-11-15 Schwarz Christian J Patterning masks and methods
DE102006022958A1 (de) * 2006-05-11 2007-11-22 Carl Zeiss Smt Ag Projektionsbelichtungsanlage, Projektionsbelichtungsverfahren und Verwendung eines Projektionsobjektivs
US7799486B2 (en) * 2006-11-21 2010-09-21 Infineon Technologies Ag Lithography masks and methods of manufacture thereof
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4953960A (en) 1988-07-15 1990-09-04 Williamson David M Optical reduction system
JP2698521B2 (ja) 1992-12-14 1998-01-19 キヤノン株式会社 反射屈折型光学系及び該光学系を備える投影露光装置
US5537260A (en) * 1993-01-26 1996-07-16 Svg Lithography Systems, Inc. Catadioptric optical reduction system with high numerical aperture
US5442184A (en) 1993-12-10 1995-08-15 Texas Instruments Incorporated System and method for semiconductor processing using polarized radiant energy
US5539567A (en) * 1994-06-16 1996-07-23 Texas Instruments Incorporated Photolithographic technique and illuminator using real-time addressable phase shift light shift
DE19535392A1 (de) * 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
US6157498A (en) * 1996-06-19 2000-12-05 Nikon Corporation Dual-imaging optical system
JP3790833B2 (ja) * 1996-08-07 2006-06-28 株式会社ニコン 投影露光方法及び装置
EP0823662A2 (en) 1996-08-07 1998-02-11 Nikon Corporation Projection exposure apparatus
JP3812051B2 (ja) * 1997-04-30 2006-08-23 株式会社ニコン 反射屈折投影光学系
JPH11326767A (ja) * 1998-05-07 1999-11-26 Nikon Corp 反射屈折縮小光学系
EP1293832A1 (en) * 1998-06-08 2003-03-19 Nikon Corporation Projection exposure apparatus and method
AU2001257191A1 (en) * 2000-04-25 2001-11-07 Silicon Valley Group Inc Optical reduction system with elimination of reticle diffraction induced bias
WO2001081977A2 (en) * 2000-04-25 2001-11-01 Silicon Valley Group, Inc. Optical reduction system with control of illumination polarization

Also Published As

Publication number Publication date
US20020027718A1 (en) 2002-03-07
US7031077B2 (en) 2006-04-18
US20030223126A1 (en) 2003-12-04
KR20020060578A (ko) 2002-07-18
EP1277088A1 (en) 2003-01-22
KR100783669B1 (ko) 2007-12-07
US6522483B2 (en) 2003-02-18
US6836380B2 (en) 2004-12-28
US20050094289A1 (en) 2005-05-05
JP2003532282A (ja) 2003-10-28
WO2001082000A1 (en) 2001-11-01

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