AU2001231887A1 - Vertical metal-semiconductor microresonator photodetecting device and productionmethod thereof - Google Patents

Vertical metal-semiconductor microresonator photodetecting device and productionmethod thereof

Info

Publication number
AU2001231887A1
AU2001231887A1 AU2001231887A AU3188701A AU2001231887A1 AU 2001231887 A1 AU2001231887 A1 AU 2001231887A1 AU 2001231887 A AU2001231887 A AU 2001231887A AU 3188701 A AU3188701 A AU 3188701A AU 2001231887 A1 AU2001231887 A1 AU 2001231887A1
Authority
AU
Australia
Prior art keywords
light
electrodes
vertical metal
incident light
productionmethod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001231887A
Other languages
English (en)
Inventor
Stephane Collin
Fabrice Pardo
Jean-Luc Pelouard
Roland Teissier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of AU2001231887A1 publication Critical patent/AU2001231887A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Glass Compositions (AREA)
AU2001231887A 2000-01-14 2001-01-12 Vertical metal-semiconductor microresonator photodetecting device and productionmethod thereof Abandoned AU2001231887A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0000468 2000-01-14
FR0000468A FR2803950B1 (fr) 2000-01-14 2000-01-14 Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif
PCT/FR2001/000103 WO2001052329A1 (fr) 2000-01-14 2001-01-12 Dispositif de photodetection a microresonateur metal-semiconducteur vertical et procede de fabrication de ce dispositif

Publications (1)

Publication Number Publication Date
AU2001231887A1 true AU2001231887A1 (en) 2001-07-24

Family

ID=8845925

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001231887A Abandoned AU2001231887A1 (en) 2000-01-14 2001-01-12 Vertical metal-semiconductor microresonator photodetecting device and productionmethod thereof

Country Status (9)

Country Link
US (1) US6713832B2 (fr)
EP (1) EP1247301B1 (fr)
JP (1) JP4694753B2 (fr)
AT (1) ATE390717T1 (fr)
AU (1) AU2001231887A1 (fr)
CA (1) CA2396951C (fr)
DE (1) DE60133365T2 (fr)
FR (1) FR2803950B1 (fr)
WO (1) WO2001052329A1 (fr)

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US7626179B2 (en) * 2005-09-30 2009-12-01 Virgin Island Microsystems, Inc. Electron beam induced resonance
US7579609B2 (en) * 2005-12-14 2009-08-25 Virgin Islands Microsystems, Inc. Coupling light of light emitting resonator to waveguide
US7619373B2 (en) * 2006-01-05 2009-11-17 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US20070190794A1 (en) * 2006-02-10 2007-08-16 Virgin Islands Microsystems, Inc. Conductive polymers for the electroplating
US20070200063A1 (en) * 2006-02-28 2007-08-30 Virgin Islands Microsystems, Inc. Wafer-level testing of light-emitting resonant structures
US7605835B2 (en) * 2006-02-28 2009-10-20 Virgin Islands Microsystems, Inc. Electro-photographic devices incorporating ultra-small resonant structures
US7443358B2 (en) * 2006-02-28 2008-10-28 Virgin Island Microsystems, Inc. Integrated filter in antenna-based detector
CN101438419B (zh) * 2006-03-13 2012-02-22 日本电气株式会社 光电二极管、用于制造这种光电二极管的方法、光学通信设备和光学互连模块
JP4835837B2 (ja) * 2006-03-31 2011-12-14 日本電気株式会社 フォトダイオードとその製造方法
US7558490B2 (en) * 2006-04-10 2009-07-07 Virgin Islands Microsystems, Inc. Resonant detector for optical signals
US20070252089A1 (en) * 2006-04-26 2007-11-01 Virgin Islands Microsystems, Inc. Charged particle acceleration apparatus and method
US20070264023A1 (en) * 2006-04-26 2007-11-15 Virgin Islands Microsystems, Inc. Free space interchip communications
US7876793B2 (en) * 2006-04-26 2011-01-25 Virgin Islands Microsystems, Inc. Micro free electron laser (FEL)
US7646991B2 (en) * 2006-04-26 2010-01-12 Virgin Island Microsystems, Inc. Selectable frequency EMR emitter
US7586167B2 (en) * 2006-05-05 2009-09-08 Virgin Islands Microsystems, Inc. Detecting plasmons using a metallurgical junction
US7557647B2 (en) * 2006-05-05 2009-07-07 Virgin Islands Microsystems, Inc. Heterodyne receiver using resonant structures
US8188431B2 (en) 2006-05-05 2012-05-29 Jonathan Gorrell Integration of vacuum microelectronic device with integrated circuit
US7554083B2 (en) * 2006-05-05 2009-06-30 Virgin Islands Microsystems, Inc. Integration of electromagnetic detector on integrated chip
US7656094B2 (en) 2006-05-05 2010-02-02 Virgin Islands Microsystems, Inc. Electron accelerator for ultra-small resonant structures
US7746532B2 (en) * 2006-05-05 2010-06-29 Virgin Island Microsystems, Inc. Electro-optical switching system and method
US7732786B2 (en) * 2006-05-05 2010-06-08 Virgin Islands Microsystems, Inc. Coupling energy in a plasmon wave to an electron beam
US20070272931A1 (en) * 2006-05-05 2007-11-29 Virgin Islands Microsystems, Inc. Methods, devices and systems producing illumination and effects
US7723698B2 (en) 2006-05-05 2010-05-25 Virgin Islands Microsystems, Inc. Top metal layer shield for ultra-small resonant structures
US7710040B2 (en) * 2006-05-05 2010-05-04 Virgin Islands Microsystems, Inc. Single layer construction for ultra small devices
US7741934B2 (en) * 2006-05-05 2010-06-22 Virgin Islands Microsystems, Inc. Coupling a signal through a window
US7728397B2 (en) 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Coupled nano-resonating energy emitting structures
US7986113B2 (en) * 2006-05-05 2011-07-26 Virgin Islands Microsystems, Inc. Selectable frequency light emitter
US7728702B2 (en) * 2006-05-05 2010-06-01 Virgin Islands Microsystems, Inc. Shielding of integrated circuit package with high-permeability magnetic material
US7569836B2 (en) * 2006-05-05 2009-08-04 Virgin Islands Microsystems, Inc. Transmission of data between microchips using a particle beam
US7718977B2 (en) 2006-05-05 2010-05-18 Virgin Island Microsystems, Inc. Stray charged particle removal device
JP4772585B2 (ja) * 2006-05-10 2011-09-14 浜松ホトニクス株式会社 光検出器
US7573045B2 (en) * 2006-05-15 2009-08-11 Virgin Islands Microsystems, Inc. Plasmon wave propagation devices and methods
US7679067B2 (en) * 2006-05-26 2010-03-16 Virgin Island Microsystems, Inc. Receiver array using shared electron beam
US7655934B2 (en) 2006-06-28 2010-02-02 Virgin Island Microsystems, Inc. Data on light bulb
US7560716B2 (en) * 2006-09-22 2009-07-14 Virgin Islands Microsystems, Inc. Free electron oscillator
US7659513B2 (en) * 2006-12-20 2010-02-09 Virgin Islands Microsystems, Inc. Low terahertz source and detector
DE102007012475B4 (de) * 2007-03-15 2009-02-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schneller Photoleiter und Verfahren zur Herstellung und Antenne mit Photoleiter
WO2008136479A1 (fr) * 2007-05-01 2008-11-13 Nec Corporation Photodiode de type à couplage de chemin de guide d'onde
JP5069497B2 (ja) * 2007-05-24 2012-11-07 富士フイルム株式会社 質量分析用デバイス及びそれを用いた質量分析装置
US7990336B2 (en) 2007-06-19 2011-08-02 Virgin Islands Microsystems, Inc. Microwave coupled excitation of solid state resonant arrays
US7960753B2 (en) * 2007-09-11 2011-06-14 The Aerospace Corporation Surface plasmon polariton actuated transistors
US7791053B2 (en) 2007-10-10 2010-09-07 Virgin Islands Microsystems, Inc. Depressed anode with plasmon-enabled devices such as ultra-small resonant structures
EP2109147A1 (fr) * 2008-04-08 2009-10-14 FOM Institute for Atomic and Molueculair Physics Cellule photovoltaïque avec nano-structures à génération de résonance à plasmons de surface
FR2940522B1 (fr) * 2008-12-24 2011-03-18 Commissariat Energie Atomique Photodetecteur comprenant une region semiconductrice tres mince
US20100252514A1 (en) * 2009-04-03 2010-10-07 Min-Ju Chung Foldable baseball equipment rack
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
WO2011004990A1 (fr) * 2009-07-06 2011-01-13 University Of Seoul Industry Cooperation Foundation Photodétecteur capable de détecter un rayonnement à grande longueur d'onde
US8809834B2 (en) * 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
FR2954853B1 (fr) 2009-12-24 2011-12-09 Commissariat Energie Atomique Photodetecteur a structure plasmon
FR2959021B1 (fr) * 2010-04-15 2012-07-27 Commissariat Energie Atomique Filtre optique mono ou multi-frequentiel et detecteur comportant un tel filtre
FR2971594B1 (fr) * 2011-02-14 2017-03-10 Centre Nat Rech Scient Modulateur terahertz
FR2992470B1 (fr) * 2012-06-26 2014-08-08 Commissariat Energie Atomique Element photodetecteur pour une radiation lumineuse infrarouge et photodetecteur comprenant un tel element photodetecteur
US9520510B2 (en) 2013-12-03 2016-12-13 Samsung Display Co., Ltd. Embedded optical sensors using transverse Fabry-Perot resonator as detectors
TWI512963B (zh) * 2014-01-13 2015-12-11 Univ Nat Taiwan 光偵測器
US9929291B2 (en) 2014-02-06 2018-03-27 Raytheon Company Photo-detector having plasmonic resonance and photon crystal thermal noise suppression
DE102014007936A1 (de) 2014-05-27 2015-12-03 Karlsruher Institut für Technologie Plasmonisches Bauteil und plasmonischer Photodetektor sowie deren Herstellungsverfahren
CN112420398B (zh) * 2020-11-13 2021-12-10 中国科学技术大学 基于等离子体激元增强的光电化学光探测器及其制备方法
WO2024038897A1 (fr) * 2022-08-18 2024-02-22 国立大学法人東京大学 Élément, procédé de fabrication d'élément et registre de spins photoniques

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US4555622A (en) * 1982-11-30 1985-11-26 At&T Bell Laboratories Photodetector having semi-insulating material and a contoured, substantially periodic surface
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Also Published As

Publication number Publication date
EP1247301B1 (fr) 2008-03-26
US20030010979A1 (en) 2003-01-16
ATE390717T1 (de) 2008-04-15
EP1247301A1 (fr) 2002-10-09
WO2001052329A1 (fr) 2001-07-19
DE60133365T2 (de) 2009-04-16
FR2803950A1 (fr) 2001-07-20
CA2396951C (fr) 2008-05-06
CA2396951A1 (fr) 2001-07-19
JP4694753B2 (ja) 2011-06-08
DE60133365D1 (de) 2008-05-08
US6713832B2 (en) 2004-03-30
FR2803950B1 (fr) 2002-03-01
JP2003520438A (ja) 2003-07-02

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