AU2001218942A1 - Cleaning method and etching method - Google Patents

Cleaning method and etching method

Info

Publication number
AU2001218942A1
AU2001218942A1 AU2001218942A AU1894201A AU2001218942A1 AU 2001218942 A1 AU2001218942 A1 AU 2001218942A1 AU 2001218942 A AU2001218942 A AU 2001218942A AU 1894201 A AU1894201 A AU 1894201A AU 2001218942 A1 AU2001218942 A1 AU 2001218942A1
Authority
AU
Australia
Prior art keywords
cleaning
etching
etching method
cleaning method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001218942A
Other languages
English (en)
Inventor
Tokiko Kanayama
Hiroaki Kouno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Precision Products Co Ltd
Original Assignee
Sumitomo Precision Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co Ltd filed Critical Sumitomo Precision Products Co Ltd
Publication of AU2001218942A1 publication Critical patent/AU2001218942A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • A—HUMAN NECESSITIES
    • A23—FOODS OR FOODSTUFFS; TREATMENT THEREOF, NOT COVERED BY OTHER CLASSES
    • A23K—FODDER
    • A23K10/00—Animal feeding-stuffs
    • A23K10/30—Animal feeding-stuffs from material of plant origin, e.g. roots, seeds or hay; from material of fungal origin, e.g. mushrooms
    • A23K10/37—Animal feeding-stuffs from material of plant origin, e.g. roots, seeds or hay; from material of fungal origin, e.g. mushrooms from waste material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D11/00—Solvent extraction
    • B01D11/04—Solvent extraction of solutions which are liquid
    • B01D11/0488—Flow sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/80—Food processing, e.g. use of renewable energies or variable speed drives in handling, conveying or stacking
    • Y02P60/87—Re-use of by-products of food processing for fodder production

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Biotechnology (AREA)
  • Molecular Biology (AREA)
  • Mycology (AREA)
  • Physiology (AREA)
  • Animal Husbandry (AREA)
  • Zoology (AREA)
  • Botany (AREA)
  • Health & Medical Sciences (AREA)
  • Food Science & Technology (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AU2001218942A 2000-12-18 2000-12-18 Cleaning method and etching method Abandoned AU2001218942A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/008974 WO2002050883A1 (fr) 2000-12-18 2000-12-18 Procede de nettoyage et procede d'attaque

Publications (1)

Publication Number Publication Date
AU2001218942A1 true AU2001218942A1 (en) 2002-07-01

Family

ID=11736805

Family Applications (2)

Application Number Title Priority Date Filing Date
AU2001218942A Abandoned AU2001218942A1 (en) 2000-12-18 2000-12-18 Cleaning method and etching method
AU2002222670A Abandoned AU2002222670A1 (en) 2000-12-18 2001-12-17 Cleaning and etching methods and their apparatuses

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU2002222670A Abandoned AU2002222670A1 (en) 2000-12-18 2001-12-17 Cleaning and etching methods and their apparatuses

Country Status (6)

Country Link
US (3) US6939409B2 (fr)
JP (2) JPWO2002050883A1 (fr)
CN (1) CN1461493A (fr)
AU (2) AU2001218942A1 (fr)
TW (1) TW571340B (fr)
WO (2) WO2002050883A1 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1461493A (zh) * 2000-12-18 2003-12-10 住友精密工业株式会社 清洗方法和腐蚀方法
GB0413554D0 (en) * 2004-06-17 2004-07-21 Point 35 Microstructures Ltd Improved method and apparartus for the etching of microstructures
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
WO2006101767A2 (fr) * 2005-03-16 2006-09-28 Advanced Technology Materials, Inc. Systeme de distribution de reactifs a partir de sources solides
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
US8278222B2 (en) * 2005-11-22 2012-10-02 Air Products And Chemicals, Inc. Selective etching and formation of xenon difluoride
US20070117396A1 (en) * 2005-11-22 2007-05-24 Dingjun Wu Selective etching of titanium nitride with xenon difluoride
US20070129273A1 (en) * 2005-12-07 2007-06-07 Clark Philip G In situ fluoride ion-generating compositions and uses thereof
US7396770B2 (en) * 2006-01-10 2008-07-08 Hitachi Global Storage Technologies Netherlands B.V. Post-parting etch to smooth silicon sliders
JP2010503977A (ja) * 2006-04-26 2010-02-04 アドバンスト テクノロジー マテリアルズ，インコーポレイテッド 半導体処理システムの洗浄方法
US20080142039A1 (en) * 2006-12-13 2008-06-19 Advanced Technology Materials, Inc. Removal of nitride deposits
JP4937724B2 (ja) * 2006-12-15 2012-05-23 東京エレクトロン株式会社 基板載置台、基板載置台の製造方法、基板処理装置、流体供給機構
US8491752B2 (en) 2006-12-15 2013-07-23 Tokyo Electron Limited Substrate mounting table and method for manufacturing same, substrate processing apparatus, and fluid supply mechanism
KR101755970B1 (ko) 2008-02-11 2017-07-07 엔테그리스, 아이엔씨. 이온 공급원 챔버를 포함하는 이온 주입 시스템의 성능 향상 및 수명 연장 방법
JP2011018885A (ja) * 2009-06-12 2011-01-27 Seiko Epson Corp パターン膜形成部材の製造方法、パターン膜形成部材、電気光学装置、電子機器
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
GB2473851C (en) * 2009-09-25 2013-08-21 Memsstar Ltd Improved selectivity in a xenon difluoride etch process
EP3267470A3 (fr) 2012-02-14 2018-04-18 Entegris, Inc. Gaz dopant de carbone et co-écoulement pour faisceau d'implant et amélioration de performances de source de vie
US10079150B2 (en) 2015-07-23 2018-09-18 Spts Technologies Limited Method and apparatus for dry gas phase chemically etching a structure
US10651233B2 (en) * 2018-08-21 2020-05-12 Northrop Grumman Systems Corporation Method for forming superconducting structures
JP7224268B2 (ja) * 2019-10-16 2023-02-17 三菱電機株式会社 光半導体装置の製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298112A (en) * 1987-08-28 1994-03-29 Kabushiki Kaisha Toshiba Method for removing composite attached to material by dry etching
DE3855636T2 (de) 1987-08-28 1997-03-27 Toshiba Kawasaki Kk Plasma-Entschichtungsverfahren für organische und anorganische Schichten
JP2724165B2 (ja) 1987-08-28 1998-03-09 株式会社東芝 有機化合物膜の除去方法及び除去装置
JP2890432B2 (ja) * 1989-01-10 1999-05-17 富士通株式会社 有機物の灰化方法
JPH0496222A (ja) 1990-08-03 1992-03-27 Fujitsu Ltd 半導体装置の製造方法
US5182646A (en) 1990-09-24 1993-01-26 Thomson Consumer Electronics, Inc. Linkable scan lists for a television receiver
JPH07122539A (ja) * 1993-10-25 1995-05-12 Hitachi Ltd 表面処理方法
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
JPH08274072A (ja) * 1995-03-31 1996-10-18 Toshiba Corp 表面処理装置および表面処理方法
DE19713090B4 (de) * 1996-03-28 2004-06-17 Kabushiki Kaisha Toshiba, Kawasaki Verfahren und Apparatur zum Ätzen von Silicium-Materialien
JP3417239B2 (ja) 1997-01-17 2003-06-16 三菱電機株式会社 マイクロエレクトロメカニカルデバイスの作製方法
JP3337638B2 (ja) * 1997-03-31 2002-10-21 キヤノン株式会社 フッ化物結晶の製造方法及び光学部品の製造方法
US6042738A (en) 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
GB9709659D0 (en) * 1997-05-13 1997-07-02 Surface Tech Sys Ltd Method and apparatus for etching a workpiece
US6018065A (en) * 1997-11-10 2000-01-25 Advanced Technology Materials, Inc. Method of fabricating iridium-based materials and structures on substrates, iridium source reagents therefor
KR20010033202A (ko) * 1997-12-17 2001-04-25 모리시타 요이찌 반도체박막의 제조방법과 그 제조장치 및 반도체소자와 그제조방법
JP2000164559A (ja) * 1998-09-22 2000-06-16 Seiko Epson Corp シリコン系物質の選択エッチング方法および装置
US6482748B1 (en) * 1999-09-03 2002-11-19 Taiwan Semiconductor Manufacturing Company Poly gate silicide inspection by back end etching
JP2001102345A (ja) * 1999-09-27 2001-04-13 Jun Kikuchi 表面処理方法および装置
US7041224B2 (en) * 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
DE10028662A1 (de) * 2000-06-09 2001-12-13 Nokia Mobile Phones Ltd Routefinder
US6736987B1 (en) * 2000-07-12 2004-05-18 Techbank Corporation Silicon etching apparatus using XeF2
CN1461493A (zh) * 2000-12-18 2003-12-10 住友精密工业株式会社 清洗方法和腐蚀方法
US6936183B2 (en) * 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures

Also Published As

Publication number Publication date
CN1461493A (zh) 2003-12-10
TW571340B (en) 2004-01-11
JPWO2002050884A1 (ja) 2004-04-22
AU2002222670A1 (en) 2002-07-01
US6913653B2 (en) 2005-07-05
JPWO2002050883A1 (ja) 2004-04-22
WO2002050883A1 (fr) 2002-06-27
US20040108296A1 (en) 2004-06-10
WO2002050884A1 (fr) 2002-06-27
US20040069318A1 (en) 2004-04-15
US20050109733A1 (en) 2005-05-26
US6939409B2 (en) 2005-09-06
JP4036751B2 (ja) 2008-01-23

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