ATE78632T1 - Verbindung von elektronischen bauteilen untereinander. - Google Patents

Verbindung von elektronischen bauteilen untereinander.

Info

Publication number
ATE78632T1
ATE78632T1 AT88900532T AT88900532T ATE78632T1 AT E78632 T1 ATE78632 T1 AT E78632T1 AT 88900532 T AT88900532 T AT 88900532T AT 88900532 T AT88900532 T AT 88900532T AT E78632 T1 ATE78632 T1 AT E78632T1
Authority
AT
Austria
Prior art keywords
wires
contacts
component
electronic components
wire
Prior art date
Application number
AT88900532T
Other languages
English (en)
Inventor
William Dominic Carlomagno
Dennis Edwards Cummings
Alexandru Stephen Gliga
Original Assignee
Raychem Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raychem Corp filed Critical Raychem Corp
Application granted granted Critical
Publication of ATE78632T1 publication Critical patent/ATE78632T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13124—Aluminium [Al] as principal constituent
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
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    • H01L2924/01033—Arsenic [As]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Details Of Connecting Devices For Male And Female Coupling (AREA)
AT88900532T 1986-12-17 1987-12-17 Verbindung von elektronischen bauteilen untereinander. ATE78632T1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US94266586A 1986-12-17 1986-12-17
US94266786A 1986-12-17 1986-12-17
US1555087A 1987-02-13 1987-02-13
PCT/US1987/003360 WO1988004829A1 (en) 1986-12-17 1987-12-17 Interconnection of electronic components
EP88900532A EP0293459B1 (de) 1986-12-17 1987-12-17 Verbindung von elektronischen bauteilen untereinander

Publications (1)

Publication Number Publication Date
ATE78632T1 true ATE78632T1 (de) 1992-08-15

Family

ID=27360374

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88900532T ATE78632T1 (de) 1986-12-17 1987-12-17 Verbindung von elektronischen bauteilen untereinander.

Country Status (6)

Country Link
EP (1) EP0293459B1 (de)
JP (1) JPH01501587A (de)
KR (1) KR890700265A (de)
AT (1) ATE78632T1 (de)
DE (1) DE3780630T2 (de)
WO (1) WO1988004829A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5195237A (en) * 1987-05-21 1993-03-23 Cray Computer Corporation Flying leads for integrated circuits
US5184400A (en) * 1987-05-21 1993-02-09 Cray Computer Corporation Method for manufacturing a twisted wire jumper electrical interconnector
US5112232A (en) * 1987-05-21 1992-05-12 Cray Computer Corporation Twisted wire jumper electrical interconnector
US5054192A (en) * 1987-05-21 1991-10-08 Cray Computer Corporation Lead bonding of chips to circuit boards and circuit boards to circuit boards
FR2638894A1 (fr) * 1988-11-04 1990-05-11 Thomson Csf Dispositif et procede de connexion et de fixation de composants
US5295619A (en) * 1992-05-22 1994-03-22 Rohm Co., Ltd. Method and apparatus for performing wire bonding by using solder wire
US6887769B2 (en) 2002-02-06 2005-05-03 Intel Corporation Dielectric recess for wafer-to-wafer and die-to-die metal bonding and method of fabricating the same
US6661085B2 (en) 2002-02-06 2003-12-09 Intel Corporation Barrier structure against corrosion and contamination in three-dimensional (3-D) wafer-to-wafer vertical stack
US6975016B2 (en) 2002-02-06 2005-12-13 Intel Corporation Wafer bonding using a flexible bladder press and thinned wafers for three-dimensional (3D) wafer-to-wafer vertical stack integration, and application thereof
US6762076B2 (en) 2002-02-20 2004-07-13 Intel Corporation Process of vertically stacking multiple wafers supporting different active integrated circuit (IC) devices
US7087538B2 (en) 2004-08-16 2006-08-08 Intel Corporation Method to fill the gap between coupled wafers
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3373481A (en) * 1965-06-22 1968-03-19 Sperry Rand Corp Method of electrically interconnecting conductors
JPS4919634B1 (de) * 1969-12-29 1974-05-18
DE2608250C3 (de) * 1976-02-28 1985-06-05 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zum Thermokompressions-Verbinden von auf Halbleiterkörpern befindlichen Metall-Anschlußkontakten mit zugeordneten Gehäuseanschlußteilen und Vorrichtung zur Durchführung des Verfahrens
US4326663A (en) * 1978-07-20 1982-04-27 Eltec Instruments, Inc. Pyroelectric detector
US4374457A (en) * 1980-08-04 1983-02-22 Wiech Raymond E Jr Method of fabricating complex micro-circuit boards and substrates
JPS59208751A (ja) * 1983-05-13 1984-11-27 Hitachi Ltd バンプ形成方法
JPS60134444A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd バンプ電極形成方法
JPH0689951A (ja) * 1992-09-08 1994-03-29 Seiko Epson Corp Ｉｃソケット

Also Published As

Publication number Publication date
KR890700265A (ko) 1989-03-10
DE3780630D1 (de) 1992-08-27
EP0293459A1 (de) 1988-12-07
JPH01501587A (ja) 1989-06-01
DE3780630T2 (de) 1993-03-18
EP0293459B1 (de) 1992-07-22
WO1988004829A1 (en) 1988-06-30

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