ATE75340T1 - Statische ram-zellen mit vier transistoren. - Google Patents

Statische ram-zellen mit vier transistoren.

Info

Publication number
ATE75340T1
ATE75340T1 AT87310856T AT87310856T ATE75340T1 AT E75340 T1 ATE75340 T1 AT E75340T1 AT 87310856 T AT87310856 T AT 87310856T AT 87310856 T AT87310856 T AT 87310856T AT E75340 T1 ATE75340 T1 AT E75340T1
Authority
AT
Austria
Prior art keywords
gate
transistors
pull
pass
separate
Prior art date
Application number
AT87310856T
Other languages
English (en)
Inventor
Tat C Choi
Richard K Klein
Craig S Sander
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of ATE75340T1 publication Critical patent/ATE75340T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
AT87310856T 1987-01-28 1987-12-10 Statische ram-zellen mit vier transistoren. ATE75340T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US821587A 1987-01-28 1987-01-28
EP87310856A EP0281711B1 (de) 1987-01-28 1987-12-10 Statische RAM-Zellen mit vier Transistoren

Publications (1)

Publication Number Publication Date
ATE75340T1 true ATE75340T1 (de) 1992-05-15

Family

ID=21730396

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87310856T ATE75340T1 (de) 1987-01-28 1987-12-10 Statische ram-zellen mit vier transistoren.

Country Status (4)

Country Link
EP (1) EP0281711B1 (de)
JP (1) JP2747540B2 (de)
AT (1) ATE75340T1 (de)
DE (1) DE3778533D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246264A (ja) * 1989-03-20 1990-10-02 Hitachi Ltd 半導体装置およびその製造方法
JP2946567B2 (ja) * 1989-11-15 1999-09-06 ソニー株式会社 メモリ半導体構造及び位相シフトマスク
KR100199258B1 (ko) * 1990-02-09 1999-06-15 가나이 쓰도무 반도체집적회로장치
EP0469217B1 (de) * 1990-07-31 1996-04-10 International Business Machines Corporation Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten selbstjustierten Feldeffekttransistoren aus Polisilizium und sich daraus ergebende Struktur
EP0469215B1 (de) * 1990-07-31 1995-11-22 International Business Machines Corporation Verfahren zur Herstellung von Bauelementen mit übereinander angeordneten Feldeffekttransistoren mit Wolfram-Gitter und sich daraus ergebende Struktur
EP0469214A1 (de) * 1990-07-31 1992-02-05 International Business Machines Corporation Verfahren zur Herstellung geschichteter Leiter- und/oder Widerstandsbereiche in Multiebenen-Halbleiterbauelementen und daraus resultierende Struktur
JPH0541378A (ja) * 1991-03-15 1993-02-19 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH07235645A (ja) * 1993-12-29 1995-09-05 Mitsubishi Electric Corp スタティック型半導体記憶装置およびその製造方法
JPH08125137A (ja) * 1994-10-28 1996-05-17 Nec Corp 半導体記憶装置
JP3701405B2 (ja) 1996-08-27 2005-09-28 株式会社ルネサステクノロジ スタティック型半導体記憶装置
US5804470A (en) * 1996-10-23 1998-09-08 Advanced Micro Devices, Inc. Method of making a selective epitaxial growth circuit load element
WO2003023847A2 (en) * 2001-09-13 2003-03-20 Koninklijke Philips Electronics N.V. Integrated circuit, portable device and method for manufacturing an integrated circuit
CN113138527B (zh) * 2020-01-16 2024-04-02 中芯国际集成电路制造(上海)有限公司 掩膜版、存储单元、sram器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400712A (en) * 1981-02-13 1983-08-23 Bell Telephone Laboratories, Incorporated Static bipolar random access memory
JPS57210663A (en) * 1981-06-19 1982-12-24 Hitachi Ltd Semiconductor memory device
DE3380548D1 (en) * 1982-03-03 1989-10-12 Fujitsu Ltd A semiconductor memory device
US4554644A (en) * 1982-06-21 1985-11-19 Fairchild Camera & Instrument Corporation Static RAM cell
JPS60161659A (ja) * 1984-02-01 1985-08-23 Hitachi Ltd 半導体集積回路装置
JPS60254653A (ja) * 1984-05-30 1985-12-16 Fujitsu Ltd 半導体記憶装置
JPS6386561A (ja) * 1986-09-30 1988-04-16 Sony Corp メモリ装置
JPS63131567A (ja) * 1986-11-21 1988-06-03 Sony Corp メモリ装置

Also Published As

Publication number Publication date
EP0281711A3 (en) 1989-05-24
JPS63193558A (ja) 1988-08-10
DE3778533D1 (de) 1992-05-27
EP0281711B1 (de) 1992-04-22
EP0281711A2 (de) 1988-09-14
JP2747540B2 (ja) 1998-05-06

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties