ATE69337T1 - Mehrfunktionsschaltung in verschwommene logik. - Google Patents

Mehrfunktionsschaltung in verschwommene logik.

Info

Publication number
ATE69337T1
ATE69337T1 AT85108375T AT85108375T ATE69337T1 AT E69337 T1 ATE69337 T1 AT E69337T1 AT 85108375 T AT85108375 T AT 85108375T AT 85108375 T AT85108375 T AT 85108375T AT E69337 T1 ATE69337 T1 AT E69337T1
Authority
AT
Austria
Prior art keywords
fuzzy logic
input
multifunctional circuit
current
circuit
Prior art date
Application number
AT85108375T
Other languages
English (en)
Inventor
Takeshi Yamakawa
Ukyo-Ku
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Application granted granted Critical
Publication of ATE69337T1 publication Critical patent/ATE69337T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N7/00—Computing arrangements based on specific mathematical models
    • G06N7/02—Computing arrangements based on specific mathematical models using fuzzy logic
    • G06N7/04—Physical realisation
    • G06N7/043—Analogue or partially analogue implementation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
AT85108375T 1984-07-06 1985-07-05 Mehrfunktionsschaltung in verschwommene logik. ATE69337T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59141250A JPS6120428A (ja) 1984-07-06 1984-07-06 多機能フアジイ論理回路
EP85108375A EP0168004B1 (de) 1984-07-06 1985-07-05 Mehrfunktionsschaltung in verschwommene Logik

Publications (1)

Publication Number Publication Date
ATE69337T1 true ATE69337T1 (de) 1991-11-15

Family

ID=15287565

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85108375T ATE69337T1 (de) 1984-07-06 1985-07-05 Mehrfunktionsschaltung in verschwommene logik.

Country Status (4)

Country Link
EP (1) EP0168004B1 (de)
JP (1) JPS6120428A (de)
AT (1) ATE69337T1 (de)
DE (1) DE3584585D1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0786893B2 (ja) * 1986-11-13 1995-09-20 オムロン株式会社 ファジィ情報処理装置
US5343553A (en) * 1988-11-04 1994-08-30 Olympus Optical Co., Ltd. Digital fuzzy inference system using logic circuits
EP0398536B1 (de) * 1989-05-17 1996-01-31 Pioneer Electronic Corporation Vorrichtung zum Steuern der akustischen Übertragungsdaten

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60199230A (ja) * 1984-03-23 1985-10-08 Omron Tateisi Electronics Co フアジイ論理集積回路

Also Published As

Publication number Publication date
EP0168004A2 (de) 1986-01-15
JPS6120428A (ja) 1986-01-29
DE3584585D1 (de) 1991-12-12
EP0168004B1 (de) 1991-11-06
EP0168004A3 (en) 1988-11-30

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Legal Events

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