ATE550776T1 - Strukturausbildung - Google Patents

Strukturausbildung

Info

Publication number
ATE550776T1
ATE550776T1 AT05764071T AT05764071T ATE550776T1 AT E550776 T1 ATE550776 T1 AT E550776T1 AT 05764071 T AT05764071 T AT 05764071T AT 05764071 T AT05764071 T AT 05764071T AT E550776 T1 ATE550776 T1 AT E550776T1
Authority
AT
Austria
Prior art keywords
structural training
training
structural
equilibrium
dimensional semiconductor
Prior art date
Application number
AT05764071T
Other languages
English (en)
Inventor
Gregory S Herman
Peter Mardilovich
Chinmay Betrabet
Chih-Hung Chang
Yu-Jen Chang
Doo-Hyoung Lee
Mark W Hoskins
Original Assignee
Hewlett Packard Development Co
Univ Oregon State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Development Co, Univ Oregon State filed Critical Hewlett Packard Development Co
Application granted granted Critical
Publication of ATE550776T1 publication Critical patent/ATE550776T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/04—Pretreatment of the material to be coated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J11/00—Devices or arrangements  of selective printing mechanisms, e.g. ink-jet printers or thermal printers, for supporting or handling copy material in sheet or web form
    • B41J11/0015—Devices or arrangements  of selective printing mechanisms, e.g. ink-jet printers or thermal printers, for supporting or handling copy material in sheet or web form for treating before, during or after printing or for uniform coating or laminating the copy material before or after printing
    • B41J11/002—Curing or drying the ink on the copy materials, e.g. by heating or irradiating
    • B41J11/0021—Curing or drying the ink on the copy materials, e.g. by heating or irradiating using irradiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Thermal Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Recrystallisation Techniques (AREA)
  • Optical Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pressure Sensors (AREA)
AT05764071T 2004-07-06 2005-06-27 Strukturausbildung ATE550776T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/885,223 US7547647B2 (en) 2004-07-06 2004-07-06 Method of making a structure
PCT/US2005/022925 WO2006014265A1 (en) 2004-07-06 2005-06-27 Structure formation

Publications (1)

Publication Number Publication Date
ATE550776T1 true ATE550776T1 (de) 2012-04-15

Family

ID=35149227

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05764071T ATE550776T1 (de) 2004-07-06 2005-06-27 Strukturausbildung

Country Status (7)

Country Link
US (2) US7547647B2 (de)
EP (1) EP1784853B1 (de)
KR (1) KR20070041502A (de)
CN (1) CN1998066B (de)
AT (1) ATE550776T1 (de)
TW (1) TW200605197A (de)
WO (1) WO2006014265A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7744002B2 (en) * 2004-03-11 2010-06-29 L-1 Secure Credentialing, Inc. Tamper evident adhesive and identification document including same
AT503838B1 (de) * 2006-06-22 2008-11-15 Isovolta Verfahren zum herstellen einer anorganische halbleiterpartikel enthaltenden schicht sowie bauelemente umfassend diese schicht
US7858918B2 (en) * 2007-02-05 2010-12-28 Ludwig Lester F Molecular transistor circuits compatible with carbon nanotube sensors and transducers
US7838809B2 (en) 2007-02-17 2010-11-23 Ludwig Lester F Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials
CN101632179B (zh) * 2007-04-06 2012-05-30 夏普株式会社 半导体元件及其制造方法、以及包括该半导体元件的电子器件
WO2008149568A1 (ja) * 2007-06-05 2008-12-11 Pikapower. Co., Ltd. マイクロ波照射による銀イオン定着化物および銀イオン定着化方法
WO2010041278A1 (en) * 2008-10-06 2010-04-15 Indian Institute Of Science A method for obtaining a coating of a metal compound onto a substrate, an apparatus and a substrate thereof
CN104894538A (zh) * 2008-10-17 2015-09-09 Ncc纳诺责任有限公司 还原低温基底上的薄膜的方法
EP2194764A1 (de) * 2008-12-04 2010-06-09 Stichting Dutch Polymer Institute Verfahren zur Erzeugung von elektrisch leitenden Oberflächenstrukturen, Vorrichtung und Verwendung dafür
US7964490B2 (en) * 2008-12-31 2011-06-21 Intel Corporation Methods of forming nickel sulfide film on a semiconductor device
US20110108102A1 (en) * 2009-11-06 2011-05-12 Honeywell International Inc. Solar cell with enhanced efficiency
WO2011081829A1 (en) * 2009-12-15 2011-07-07 First Solar, Inc. Photovoltaic window layer
US20120031490A1 (en) * 2010-08-03 2012-02-09 Honeywell International Inc. Quantum dot solar cells and methods for manufacturing such solar cells
TW201306337A (zh) * 2011-04-08 2013-02-01 Sonavation Inc 用於在壓電陣列上沈積材料之系統及方法
KR20130026062A (ko) * 2011-09-05 2013-03-13 삼성전자주식회사 인쇄회로기판 조립체 및 그 제조방법
KR101386001B1 (ko) * 2012-06-25 2014-04-16 한국전기연구원 마이크로파 가열에 의한 국부적 순간 합성을 통해 3차원 미세구조체를 제조하는 방법 및 장치

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823349B2 (ja) 1975-08-11 1983-05-14 新日本製鐵株式会社 タイカブツノシヨウケツホウホウ
GB2106709B (en) 1981-09-17 1986-11-12 Itt Ind Ltd Semiconductor processing
US4504518A (en) 1982-09-24 1985-03-12 Energy Conversion Devices, Inc. Method of making amorphous semiconductor alloys and devices using microwave energy
US4521447A (en) 1982-10-18 1985-06-04 Sovonics Solar Systems Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
FR2552293B1 (fr) 1983-09-21 1986-04-11 Centre Nat Rech Scient Procede de traitement thermique, par application d'energie micro-onde, de revetements sur supports dielectriques, en particulier de revetements electriquement conducteurs, et produits obtenus
JPS61235835A (ja) 1985-04-12 1986-10-21 Hitachi Ltd ベ−キング処理方法とこれに用いるベ−キング処理装置
US4701345A (en) 1986-03-11 1987-10-20 Markel Corporation Process for applying polymeric coatings, and resulting coated articles
ATE70043T1 (de) * 1986-12-30 1991-12-15 Hallsworth & Ass Verbesserungen bei der bildung von metallalkoxyden und metallpulvern mittels mikrowellenstrahlung.
KR920009567B1 (ko) * 1987-12-29 1992-10-19 마쯔시다덴기산교 가부시기가이샤 산화아연위스커 및 그 제조방법
US5132248A (en) * 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
US5241040A (en) 1990-07-11 1993-08-31 International Business Machines Corporation Microwave processing
US5156986A (en) 1990-10-05 1992-10-20 General Electric Company Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration
DE4035080A1 (de) 1990-11-05 1992-05-07 Abb Patent Gmbh Verfahren und einrichtung zur herstellung von partiellen metallischen schichten
US5431966A (en) 1991-01-25 1995-07-11 Saint-Gobain Vitrage Process for enamelling a glass substrate
US5220346A (en) * 1992-02-03 1993-06-15 Xerox Corporation Printing processes with microwave drying
US5563644A (en) 1992-02-03 1996-10-08 Xerox Corporation Ink jet printing processes with microwave drying
US5238710A (en) 1992-03-30 1993-08-24 Technology Assessment & Transfer, Inc. Microwave energy-assisted chemical vapor infiltration
US5481428A (en) 1992-06-18 1996-01-02 Martin Marietta Energy Systems, Inc. Process for manufacturing multilayer capacitors
US5227600A (en) 1992-07-31 1993-07-13 The United States Of America As Represented By The United States Department Of Energy Microwave sintering of multiple articles
US5883349A (en) 1993-09-24 1999-03-16 Duquesne University Of The Holy Ghost Method and apparatus for microwave assisted chemical reactions
JP3363003B2 (ja) * 1995-10-03 2003-01-07 株式会社日立製作所 光増幅装置及び光増幅装置を用いた光伝送システム
US5662734A (en) * 1995-11-13 1997-09-02 Graphic Utilities, Inc. Ink compositions having improved optical density characteristics
US6078035A (en) 1995-12-22 2000-06-20 Lucent Technologies Inc. Integrated circuit processing utilizing microwave radiation
US5847355A (en) 1996-01-05 1998-12-08 California Institute Of Technology Plasma-assisted microwave processing of materials
KR100197157B1 (ko) 1996-07-16 1999-06-15 박원훈 마이크로파를 이용한 강유전, 고유전, 전왜, 반도성, 또는 전도성 세라믹 박막의 급속 열처리 방법
US5738915A (en) 1996-09-19 1998-04-14 Lambda Technologies, Inc. Curing polymer layers on semiconductor substrates using variable frequency microwave energy
JPH10146978A (ja) 1996-11-20 1998-06-02 Fuji Xerox Co Ltd インクジェット記録ヘッドおよびその製造方法
US5693129A (en) * 1997-01-13 1997-12-02 Xerox Corporation Ink jet ink compositions comprising anti-curl hydroxyamide derivatives and printing processes
US6086826A (en) 1997-09-15 2000-07-11 Cem Corporation Pressure sensing reaction vessel for microwave assisted chemistry
DE69840914D1 (de) * 1997-10-14 2009-07-30 Patterning Technologies Ltd Methode zur Herstellung eines elektrischen Kondensators
KR100481039B1 (ko) 1997-12-31 2005-05-16 삼성전자주식회사 마이크로웨이브를사용한박막형성장치및그방법
JP4003273B2 (ja) * 1998-01-19 2007-11-07 セイコーエプソン株式会社 パターン形成方法および基板製造装置
JPH11340129A (ja) 1998-05-28 1999-12-10 Seiko Epson Corp パターン製造方法およびパターン製造装置
US6104015A (en) 1999-01-08 2000-08-15 Jayan; Ponnarassery Sukumaran Continuous microwave rotary furnace for processing sintered ceramics
US6340225B1 (en) 1999-01-19 2002-01-22 Xerox Corporation Cross flow air system for ink jet printer
WO2001011426A1 (en) * 1999-05-27 2001-02-15 Patterning Technologies Limited Method of forming a masking pattern on a surface
GB9919913D0 (en) 1999-08-24 1999-10-27 Koninkl Philips Electronics Nv Thin-film transistors and method for producing the same
US6425663B1 (en) 2000-05-25 2002-07-30 Encad, Inc. Microwave energy ink drying system
US6444964B1 (en) 2000-05-25 2002-09-03 Encad, Inc. Microwave applicator for drying sheet material
US6508550B1 (en) 2000-05-25 2003-01-21 Eastman Kodak Company Microwave energy ink drying method
GB0017471D0 (en) 2000-07-18 2000-08-30 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
US6787198B2 (en) 2000-07-28 2004-09-07 Ekc Technology, Inc. Hydrothermal treatment of nanostructured films
WO2002016679A1 (en) * 2000-08-18 2002-02-28 Tohoku Techno Arch Co., Ltd. Polycrystalline semiconductor material and method of manufacture thereof
US6512216B2 (en) 2001-01-17 2003-01-28 The Penn State Research Foundation Microwave processing using highly microwave absorbing powdered material layers
KR100662494B1 (ko) * 2001-07-10 2007-01-02 엘지.필립스 엘시디 주식회사 비정질막 결정화방법 및 이를 이용한 액정표시소자의제조방법
JP2003038324A (ja) 2001-07-27 2003-02-12 Osaka Nishikawa:Kk パッド付シーツ
JP2003133691A (ja) * 2001-10-22 2003-05-09 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP2003302984A (ja) * 2002-04-11 2003-10-24 Yamaha Corp 歌詞表示方法、歌詞表示プログラムおよび歌詞表示装置
ATE549430T1 (de) 2003-06-17 2012-03-15 Basf Se Verfahren zur mikrowellenbeschichtung eines organischen materials mit metalloxid
US7265037B2 (en) * 2003-06-20 2007-09-04 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same

Also Published As

Publication number Publication date
TW200605197A (en) 2006-02-01
EP1784853A1 (de) 2007-05-16
US20090200541A1 (en) 2009-08-13
CN1998066A (zh) 2007-07-11
CN1998066B (zh) 2010-08-11
US20060009021A1 (en) 2006-01-12
WO2006014265A1 (en) 2006-02-09
EP1784853B1 (de) 2012-03-21
US7547647B2 (en) 2009-06-16
KR20070041502A (ko) 2007-04-18
US8143616B2 (en) 2012-03-27

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