ATE544176T1 - Selektives basisätzen - Google Patents
Selektives basisätzenInfo
- Publication number
- ATE544176T1 ATE544176T1 AT02746284T AT02746284T ATE544176T1 AT E544176 T1 ATE544176 T1 AT E544176T1 AT 02746284 T AT02746284 T AT 02746284T AT 02746284 T AT02746284 T AT 02746284T AT E544176 T1 ATE544176 T1 AT E544176T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- silicon
- amorphous
- germanium
- etching
- Prior art date
Links
- 239000010410 layer Substances 0.000 abstract 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 3
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0102560A SE0102560L (sv) | 2001-07-18 | 2001-07-18 | Selektiv basetsning |
SE0103980 | 2001-11-28 | ||
PCT/SE2002/001361 WO2003009353A1 (en) | 2001-07-18 | 2002-07-09 | Selective base etching |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE544176T1 true ATE544176T1 (de) | 2012-02-15 |
Family
ID=26655521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02746284T ATE544176T1 (de) | 2001-07-18 | 2002-07-09 | Selektives basisätzen |
Country Status (4)
Country | Link |
---|---|
US (1) | US6852638B2 (de) |
EP (1) | EP1415330B1 (de) |
AT (1) | ATE544176T1 (de) |
WO (1) | WO2003009353A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111685237A (zh) * | 2019-03-13 | 2020-09-22 | 沈阳博阳饲料股份有限公司 | 貂、狐、貉复合预混合颗粒饲料的制备方法 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1294016A1 (de) * | 2001-09-18 | 2003-03-19 | Paul Scherrer Institut | Herstellung von selbstorganisierten gestapelten Inseln für selbstjustierte Kontakte von Strukturen mit kleinen Abmessungen |
EP1650796A3 (de) * | 2004-10-20 | 2010-12-08 | STMicroelectronics (Crolles 2) SAS | Verfahren für einen Kontaktanschluss auf einer Region einer integrierten Schaltung, insbesondere auf Transistorelektroden |
GB2425400A (en) | 2005-04-18 | 2006-10-25 | X Fab Semiconductor Foundries | Improvements in transistor manufacture |
KR100625124B1 (ko) * | 2005-08-30 | 2006-09-15 | 삼성전자주식회사 | 스택형 반도체 장치의 제조 방법 |
US7902074B2 (en) * | 2006-04-07 | 2011-03-08 | Micron Technology, Inc. | Simplified pitch doubling process flow |
US20150371889A1 (en) * | 2014-06-20 | 2015-12-24 | Applied Materials, Inc. | Methods for shallow trench isolation formation in a silicon germanium layer |
US9991129B1 (en) * | 2017-05-23 | 2018-06-05 | Applied Materials, Inc. | Selective etching of amorphous silicon over epitaxial silicon |
CN111509079A (zh) * | 2020-01-20 | 2020-08-07 | 中国科学院微电子研究所 | 一种锗探测器及其制作方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5217564A (en) * | 1980-04-10 | 1993-06-08 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
US4988632A (en) * | 1990-01-02 | 1991-01-29 | Motorola, Inc. | Bipolar process using selective silicon deposition |
US5266504A (en) * | 1992-03-26 | 1993-11-30 | International Business Machines Corporation | Low temperature emitter process for high performance bipolar devices |
US5213989A (en) * | 1992-06-24 | 1993-05-25 | Motorola, Inc. | Method for forming a grown bipolar electrode contact using a sidewall seed |
US5431777A (en) * | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
US5484740A (en) * | 1994-06-06 | 1996-01-16 | Motorola, Inc. | Method of manufacturing a III-V semiconductor gate structure |
US5600174A (en) * | 1994-10-11 | 1997-02-04 | The Board Of Trustees Of The Leeland Stanford Junior University | Suspended single crystal silicon structures and method of making same |
US5616508A (en) * | 1995-01-09 | 1997-04-01 | Texas Instruments Incorporated | High speed bipolar transistor using a patterned etch stop and diffusion source |
US5593905A (en) * | 1995-02-23 | 1997-01-14 | Texas Instruments Incorporated | Method of forming stacked barrier-diffusion source and etch stop for double polysilicon BJT with patterned base link |
US5592017A (en) * | 1995-03-23 | 1997-01-07 | Texas Instruments Incorporated | Self-aligned double poly BJT using sige spacers as extrinsic base contacts |
SE508635C2 (sv) * | 1995-11-20 | 1998-10-26 | Ericsson Telefon Ab L M | Förfarande för selektiv etsning vid tillverkning av en bipolär transistor med självregistrerande bas-emitterstruktur |
US6077752A (en) * | 1995-11-20 | 2000-06-20 | Telefonaktiebolaget Lm Ericsson | Method in the manufacturing of a semiconductor device |
US5817580A (en) * | 1996-02-08 | 1998-10-06 | Micron Technology, Inc. | Method of etching silicon dioxide |
US6309975B1 (en) * | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
US6255183B1 (en) * | 1997-05-23 | 2001-07-03 | U.S. Phillips Corporation | Manufacture of a semiconductor device with a MOS transistor having an LDD structure using SiGe spacers |
-
2002
- 2002-07-09 AT AT02746284T patent/ATE544176T1/de active
- 2002-07-09 EP EP02746284A patent/EP1415330B1/de not_active Expired - Lifetime
- 2002-07-09 WO PCT/SE2002/001361 patent/WO2003009353A1/en not_active Application Discontinuation
-
2004
- 2004-01-14 US US10/757,092 patent/US6852638B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111685237A (zh) * | 2019-03-13 | 2020-09-22 | 沈阳博阳饲料股份有限公司 | 貂、狐、貉复合预混合颗粒饲料的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2003009353A1 (en) | 2003-01-30 |
US6852638B2 (en) | 2005-02-08 |
EP1415330B1 (de) | 2012-02-01 |
EP1415330A1 (de) | 2004-05-06 |
US20040157455A1 (en) | 2004-08-12 |
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