ATE540141T1 - Verringerung von lufttaschen in siliciumkristallen durch vermeidung des einbringens von nahezu unlöslichen gasen in die schmelze - Google Patents

Verringerung von lufttaschen in siliciumkristallen durch vermeidung des einbringens von nahezu unlöslichen gasen in die schmelze

Info

Publication number
ATE540141T1
ATE540141T1 AT08848771T AT08848771T ATE540141T1 AT E540141 T1 ATE540141 T1 AT E540141T1 AT 08848771 T AT08848771 T AT 08848771T AT 08848771 T AT08848771 T AT 08848771T AT E540141 T1 ATE540141 T1 AT E540141T1
Authority
AT
Austria
Prior art keywords
mel
avoiding
introduction
air pockets
reducing air
Prior art date
Application number
AT08848771T
Other languages
English (en)
Inventor
Harold Korb
Richard Phillips
Original Assignee
Memc Electronic Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronic Materials filed Critical Memc Electronic Materials
Application granted granted Critical
Publication of ATE540141T1 publication Critical patent/ATE540141T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
AT08848771T 2007-11-13 2008-11-07 Verringerung von lufttaschen in siliciumkristallen durch vermeidung des einbringens von nahezu unlöslichen gasen in die schmelze ATE540141T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/939,393 US20090120353A1 (en) 2007-11-13 2007-11-13 Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
PCT/US2008/082838 WO2009064674A1 (en) 2007-11-13 2008-11-07 Reduction of air pockets in silicon crystals by avoiding the introduction of nearly insoluble gases into the melt

Publications (1)

Publication Number Publication Date
ATE540141T1 true ATE540141T1 (de) 2012-01-15

Family

ID=40139240

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08848771T ATE540141T1 (de) 2007-11-13 2008-11-07 Verringerung von lufttaschen in siliciumkristallen durch vermeidung des einbringens von nahezu unlöslichen gasen in die schmelze

Country Status (8)

Country Link
US (1) US20090120353A1 (de)
EP (1) EP2215290B1 (de)
JP (1) JP2011502941A (de)
KR (1) KR20100100872A (de)
CN (1) CN101918623A (de)
AT (1) ATE540141T1 (de)
TW (1) TW200932962A (de)
WO (1) WO2009064674A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9665931B2 (en) 2011-12-28 2017-05-30 Sunedison Semiconductor Limited (Uen201334164H) Air pocket detection methods and systems
CN107460538B (zh) * 2017-07-19 2019-02-01 内蒙古中环光伏材料有限公司 一种提高复投单晶硅成晶率的方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2872299A (en) * 1954-11-30 1959-02-03 Rca Corp Preparation of reactive materials in a molten non-reactive lined crucible
US3615261A (en) * 1969-04-02 1971-10-26 Motorola Inc Method of producing single semiconductor crystals
US4249988A (en) * 1978-03-15 1981-02-10 Western Electric Company, Inc. Growing crystals from a melt by controlling additions of material thereto
DE3302745A1 (de) * 1983-01-27 1984-08-02 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von gegenstaenden aus hochreinem synthetischem quarzglas
US4591409A (en) * 1984-05-03 1986-05-27 Texas Instruments Incorporated Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
DE3485093D1 (de) * 1984-12-28 1991-10-24 Ibm Zuechtungsverfahren und vorrichtung zur herstellung von siliciumkristallen mit hohem und kontrolliertem kohlenstoffgehalt.
US5059410A (en) * 1985-08-01 1991-10-22 Ethyl Corporation Production of silicon
US4935046A (en) * 1987-12-03 1990-06-19 Shin-Etsu Handotai Company, Limited Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
US5373805A (en) * 1991-10-17 1994-12-20 Shin-Etsu Handotai Co., Ltd. Single crystal pulling apparatus
JP2830990B2 (ja) * 1995-05-31 1998-12-02 信越石英株式会社 石英製二重ルツボの製造方法
US5976247A (en) * 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
US5980629A (en) * 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
JPH0930889A (ja) * 1995-07-18 1997-02-04 Komatsu Electron Metals Co Ltd 半導体単結晶の引上装置
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5676751A (en) * 1996-01-22 1997-10-14 Memc Electronic Materials, Inc. Rapid cooling of CZ silicon crystal growth system
US5814148A (en) * 1996-02-01 1998-09-29 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
FR2751533B1 (fr) * 1996-07-23 2003-08-15 Oreal Composition de teinture d'oxydation pour fibres keratiniques comprenant un polymere amphiphile non-ionique
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
US5913975A (en) * 1998-02-03 1999-06-22 Memc Electronic Materials, Inc. Crucible and method of preparation thereof
US6350312B1 (en) * 1999-03-15 2002-02-26 Memc Electronic Materials, Inc. Strontium doping of molten silicon for use in crystal growing process
US6319313B1 (en) * 1999-03-15 2001-11-20 Memc Electronic Materials, Inc. Barium doping of molten silicon for use in crystal growing process
US6344083B1 (en) * 2000-02-14 2002-02-05 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6749683B2 (en) * 2000-02-14 2004-06-15 Memc Electronic Materials, Inc. Process for producing a silicon melt
US20030101924A1 (en) * 2001-11-15 2003-06-05 Memc Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon

Also Published As

Publication number Publication date
EP2215290A1 (de) 2010-08-11
CN101918623A (zh) 2010-12-15
JP2011502941A (ja) 2011-01-27
US20090120353A1 (en) 2009-05-14
EP2215290B1 (de) 2012-01-04
KR20100100872A (ko) 2010-09-15
WO2009064674A1 (en) 2009-05-22
TW200932962A (en) 2009-08-01

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