ATE539379T1 - Extrem-ultraviolett-maske mit verbessertem absorbierer - Google Patents
Extrem-ultraviolett-maske mit verbessertem absorbiererInfo
- Publication number
- ATE539379T1 ATE539379T1 AT02721056T AT02721056T ATE539379T1 AT E539379 T1 ATE539379 T1 AT E539379T1 AT 02721056 T AT02721056 T AT 02721056T AT 02721056 T AT02721056 T AT 02721056T AT E539379 T1 ATE539379 T1 AT E539379T1
- Authority
- AT
- Austria
- Prior art keywords
- extreme ultraviolet
- improved absorbent
- ultraviolet mask
- improved
- nonmetal
- Prior art date
Links
- 230000002745 absorbent Effects 0.000 title 1
- 239000002250 absorbent Substances 0.000 title 1
- 239000006096 absorbing agent Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052755 nonmetal Inorganic materials 0.000 abstract 2
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Optical Filters (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/823,641 US6610447B2 (en) | 2001-03-30 | 2001-03-30 | Extreme ultraviolet mask with improved absorber |
PCT/US2002/004914 WO2002079875A2 (en) | 2001-03-30 | 2002-02-14 | Extreme ultraviolet mask with improved absorber |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE539379T1 true ATE539379T1 (de) | 2012-01-15 |
Family
ID=25239312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT02721056T ATE539379T1 (de) | 2001-03-30 | 2002-02-14 | Extrem-ultraviolett-maske mit verbessertem absorbierer |
Country Status (7)
Country | Link |
---|---|
US (2) | US6610447B2 (de) |
EP (1) | EP1373978B1 (de) |
CN (1) | CN100354753C (de) |
AT (1) | ATE539379T1 (de) |
AU (1) | AU2002252008A1 (de) |
TW (1) | TW531783B (de) |
WO (1) | WO2002079875A2 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030000921A1 (en) * | 2001-06-29 | 2003-01-02 | Ted Liang | Mask repair with electron beam-induced chemical etching |
US6835503B2 (en) * | 2002-04-12 | 2004-12-28 | Micron Technology, Inc. | Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks |
JP4212025B2 (ja) * | 2002-07-04 | 2009-01-21 | Hoya株式会社 | 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法 |
US7118832B2 (en) * | 2003-01-08 | 2006-10-10 | Intel Corporation | Reflective mask with high inspection contrast |
JP4402656B2 (ja) * | 2003-09-17 | 2010-01-20 | カール・ツァイス・エスエムティー・アーゲー | マスク及びリソグラフィ装置 |
US7326502B2 (en) * | 2003-09-18 | 2008-02-05 | Intel Corporation | Multilayer coatings for EUV mask substrates |
JP2005321564A (ja) * | 2004-05-07 | 2005-11-17 | Canon Inc | 多層膜が形成された光学素子の製造方法 |
FR2876808B1 (fr) * | 2004-10-19 | 2008-09-05 | Commissariat Energie Atomique | Structure de masque pour lithographie |
US20060222961A1 (en) * | 2005-03-31 | 2006-10-05 | Pei-Yang Yan | Leaky absorber for extreme ultraviolet mask |
US7919005B2 (en) * | 2005-05-24 | 2011-04-05 | Panasonic Corporation | Dry etching method, fine structure formation method, mold and mold fabrication method |
JP2007133325A (ja) * | 2005-11-14 | 2007-05-31 | Fujinon Sano Kk | 反射ミラー及び光ピックアップ |
KR20080094544A (ko) * | 2006-02-13 | 2008-10-23 | 파나소닉 주식회사 | 드라이 에칭방법, 미세구조 형성방법, 몰드 및 그 제조방법 |
DE102006022352B4 (de) * | 2006-05-12 | 2014-11-20 | Qimonda Ag | Anordnung zur Projektion eines Musters von einer EUV-Maske auf ein Substrat |
ATE526679T1 (de) * | 2006-12-27 | 2011-10-15 | Asahi Glass Co Ltd | Reflexionsmaskenrohling für euv-lithographie |
WO2008093534A1 (ja) * | 2007-01-31 | 2008-08-07 | Asahi Glass Company, Limited | Euvリソグラフィ用反射型マスクブランク |
WO2009116348A1 (ja) * | 2008-03-18 | 2009-09-24 | 旭硝子株式会社 | Euvリソグラフィ用反射型マスクブランク |
JP5202141B2 (ja) * | 2008-07-07 | 2013-06-05 | 信越化学工業株式会社 | チタニアドープ石英ガラス部材及びその製造方法 |
KR20110050427A (ko) * | 2008-07-14 | 2011-05-13 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크 및 euv 리소그래피용 반사형 마스크 |
TWI467318B (zh) | 2009-12-04 | 2015-01-01 | Asahi Glass Co Ltd | An optical member for EUV microfilm, and a method for manufacturing a substrate with a reflective layer for EUV microfilm |
JP5699938B2 (ja) | 2009-12-09 | 2015-04-15 | 旭硝子株式会社 | Euvリソグラフィ用多層膜ミラーおよびその製造方法 |
KR20130007533A (ko) | 2009-12-09 | 2013-01-18 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 광학 부재 |
US9354508B2 (en) | 2013-03-12 | 2016-05-31 | Applied Materials, Inc. | Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
US9417515B2 (en) * | 2013-03-14 | 2016-08-16 | Applied Materials, Inc. | Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor |
US20140272684A1 (en) | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor |
US9285673B2 (en) * | 2014-07-10 | 2016-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Assist feature for a photolithographic process |
US9791771B2 (en) * | 2016-02-11 | 2017-10-17 | Globalfoundries Inc. | Photomask structure with an etch stop layer that enables repairs of detected defects therein and extreme ultraviolet(EUV) photolithograpy methods using the photomask structure |
WO2020176181A1 (en) * | 2019-02-25 | 2020-09-03 | Applied Materials, Inc. | A film stack for lithography applications |
DE102020213307A1 (de) | 2020-10-21 | 2022-04-21 | Asml Netherlands B.V. | Binäre Intensitätsmaske für den EUV-Spektralbereich |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4840922A (en) * | 1986-07-29 | 1989-06-20 | Ricoh Company, Ltd. | Method of manufacturing masked semiconductor laser |
US5196283A (en) * | 1989-03-09 | 1993-03-23 | Canon Kabushiki Kaisha | X-ray mask structure, and x-ray exposure process |
JPH05134385A (ja) * | 1991-11-11 | 1993-05-28 | Nikon Corp | 反射マスク |
JP3078163B2 (ja) | 1993-10-15 | 2000-08-21 | キヤノン株式会社 | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
US5500312A (en) | 1994-10-11 | 1996-03-19 | At&T Corp. | Masks with low stress multilayer films and a process for controlling the stress of multilayer films |
JPH08213303A (ja) | 1995-02-03 | 1996-08-20 | Nikon Corp | 反射型x線マスク及びその製造法 |
US5958629A (en) * | 1997-12-22 | 1999-09-28 | Intel Corporation | Using thin films as etch stop in EUV mask fabrication process |
US5939227A (en) * | 1998-03-09 | 1999-08-17 | Rochester Institute Of Technology | Multi-layered attenuated phase shift mask and a method for making the mask |
US6366639B1 (en) * | 1998-06-23 | 2002-04-02 | Kabushiki Kaisha Toshiba | X-ray mask, method of manufacturing the same, and X-ray exposure method |
US6355381B1 (en) * | 1998-09-25 | 2002-03-12 | Intel Corporation | Method to fabricate extreme ultraviolet lithography masks |
-
2001
- 2001-03-30 US US09/823,641 patent/US6610447B2/en not_active Expired - Fee Related
- 2001-12-28 TW TW090132774A patent/TW531783B/zh not_active IP Right Cessation
-
2002
- 2002-02-14 AT AT02721056T patent/ATE539379T1/de active
- 2002-02-14 WO PCT/US2002/004914 patent/WO2002079875A2/en not_active Application Discontinuation
- 2002-02-14 CN CNB028078020A patent/CN100354753C/zh not_active Expired - Fee Related
- 2002-02-14 EP EP02721056A patent/EP1373978B1/de not_active Expired - Lifetime
- 2002-02-14 AU AU2002252008A patent/AU2002252008A1/en not_active Abandoned
-
2003
- 2003-06-13 US US10/461,220 patent/US6908714B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
AU2002252008A1 (en) | 2002-10-15 |
EP1373978A2 (de) | 2004-01-02 |
CN1500230A (zh) | 2004-05-26 |
TW531783B (en) | 2003-05-11 |
EP1373978B1 (de) | 2011-12-28 |
US20030228530A1 (en) | 2003-12-11 |
WO2002079875A3 (en) | 2002-12-05 |
WO2002079875A2 (en) | 2002-10-10 |
US6610447B2 (en) | 2003-08-26 |
US6908714B2 (en) | 2005-06-21 |
CN100354753C (zh) | 2007-12-12 |
US20020142230A1 (en) | 2002-10-03 |
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