ATE533165T1 - Leitfähige paste und gitterelektrode für siliziumsolarzellen - Google Patents

Leitfähige paste und gitterelektrode für siliziumsolarzellen

Info

Publication number
ATE533165T1
ATE533165T1 AT09715172T AT09715172T ATE533165T1 AT E533165 T1 ATE533165 T1 AT E533165T1 AT 09715172 T AT09715172 T AT 09715172T AT 09715172 T AT09715172 T AT 09715172T AT E533165 T1 ATE533165 T1 AT E533165T1
Authority
AT
Austria
Prior art keywords
conductive paste
solar cells
grid electrode
silicon solar
conductive
Prior art date
Application number
AT09715172T
Other languages
English (en)
Inventor
Hideki Akimoto
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40895132&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE533165(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Du Pont filed Critical Du Pont
Application granted granted Critical
Publication of ATE533165T1 publication Critical patent/ATE533165T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
AT09715172T 2008-02-26 2009-02-25 Leitfähige paste und gitterelektrode für siliziumsolarzellen ATE533165T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/072,543 US20090211626A1 (en) 2008-02-26 2008-02-26 Conductive paste and grid electrode for silicon solar cells
PCT/US2009/035099 WO2009108675A1 (en) 2008-02-26 2009-02-25 Conductive paste and grid electrode for silicon solar cells

Publications (1)

Publication Number Publication Date
ATE533165T1 true ATE533165T1 (de) 2011-11-15

Family

ID=40895132

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09715172T ATE533165T1 (de) 2008-02-26 2009-02-25 Leitfähige paste und gitterelektrode für siliziumsolarzellen

Country Status (9)

Country Link
US (4) US20090211626A1 (de)
EP (1) EP2269195B1 (de)
JP (1) JP2011519150A (de)
KR (1) KR20100120218A (de)
CN (1) CN101952904A (de)
AT (1) ATE533165T1 (de)
ES (1) ES2375542T3 (de)
TW (1) TW200952190A (de)
WO (1) WO2009108675A1 (de)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
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US20080230119A1 (en) * 2007-03-22 2008-09-25 Hideki Akimoto Paste for back contact-type solar cell
US20090211626A1 (en) * 2008-02-26 2009-08-27 Hideki Akimoto Conductive paste and grid electrode for silicon solar cells
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KR101796658B1 (ko) * 2011-03-28 2017-11-13 삼성전자주식회사 도전성 페이스트, 상기 도전성 페이스트를 사용하여 형성된 전극을 포함하는 전자 소자 및 태양 전지
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KR101363344B1 (ko) * 2012-01-10 2014-02-19 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법.
WO2013105750A1 (ko) * 2012-01-10 2013-07-18 주식회사 젠스엔지니어링 전도성 페이스트를 전극으로 사용하는 실리콘 태양전지 모듈 및 그 제조 방법
KR101315105B1 (ko) * 2012-03-23 2013-10-07 (주)창성 태양전지용 전극 페이스트 조성물
CN104246909B (zh) * 2012-03-30 2017-09-12 荒川化学工业股份有限公司 导电浆料、固化物、电极以及电子设备
CN102637467A (zh) * 2012-04-27 2012-08-15 苏州晶讯科技股份有限公司 用于硅晶太阳能电池正面电极的导电浆料
CN103000248B (zh) * 2012-11-10 2015-10-28 江苏瑞德新能源科技有限公司 一种适应高方阻浅结的太阳能电池正银浆料用粉体料
CN103258584B (zh) * 2013-01-09 2018-04-10 深圳市创智材料科技有限公司 一种导电银浆及其制备方法
WO2014117409A1 (zh) * 2013-02-04 2014-08-07 深圳首创光伏有限公司 晶体硅太阳能电池正面电极导电浆料及其制备方法
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KR101396444B1 (ko) * 2013-05-06 2014-05-22 한화케미칼 주식회사 태양전지의 전극의 제조방법 및 이를 이용한 태양전지
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CN103440898B (zh) * 2013-08-06 2017-06-06 浙江光达电子科技有限公司 一种低银含量的太阳能电池正面电极银浆及其制备方法
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CN111212538B (zh) * 2020-02-03 2021-05-07 Oppo广东移动通信有限公司 壳体加工方法、壳体及电子设备
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Also Published As

Publication number Publication date
ES2375542T3 (es) 2012-03-01
EP2269195B1 (de) 2011-11-09
US20110223713A1 (en) 2011-09-15
WO2009108675A1 (en) 2009-09-03
US20100170567A1 (en) 2010-07-08
JP2011519150A (ja) 2011-06-30
KR20100120218A (ko) 2010-11-12
EP2269195A1 (de) 2011-01-05
US20110223712A1 (en) 2011-09-15
US8148630B2 (en) 2012-04-03
US7976735B2 (en) 2011-07-12
TW200952190A (en) 2009-12-16
US20090211626A1 (en) 2009-08-27
CN101952904A (zh) 2011-01-19
US8178007B2 (en) 2012-05-15

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