ATE527697T1 - Lichtemittierendes halbleiterbauelement - Google Patents
Lichtemittierendes halbleiterbauelementInfo
- Publication number
- ATE527697T1 ATE527697T1 AT10153590T AT10153590T ATE527697T1 AT E527697 T1 ATE527697 T1 AT E527697T1 AT 10153590 T AT10153590 T AT 10153590T AT 10153590 T AT10153590 T AT 10153590T AT E527697 T1 ATE527697 T1 AT E527697T1
- Authority
- AT
- Austria
- Prior art keywords
- light emitting
- emitting structure
- light
- semiconductor component
- emitting semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000002955 isolation Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090013157A KR101014136B1 (ko) | 2009-02-17 | 2009-02-17 | 반도체 발광소자 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE527697T1 true ATE527697T1 (de) | 2011-10-15 |
Family
ID=42244075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT10153590T ATE527697T1 (de) | 2009-02-17 | 2010-02-15 | Lichtemittierendes halbleiterbauelement |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8324643B2 (de) |
| EP (2) | EP2328189B1 (de) |
| KR (1) | KR101014136B1 (de) |
| CN (1) | CN101807635B (de) |
| AT (1) | ATE527697T1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101020963B1 (ko) | 2010-04-23 | 2011-03-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| WO2012091311A2 (en) * | 2010-12-28 | 2012-07-05 | Seoul Opto Device Co., Ltd. | High efficiency light emitting diode |
| JP6013931B2 (ja) * | 2013-02-08 | 2016-10-25 | 株式会社東芝 | 半導体発光素子 |
| DE102013103216A1 (de) * | 2013-03-28 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
| CN109449077A (zh) * | 2018-10-25 | 2019-03-08 | 山东大学 | 一种光电性能优异的多元非晶金属氧化物半导体薄膜的制备方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0487381A (ja) | 1990-07-31 | 1992-03-19 | Eastman Kodak Japan Kk | 発光ダイオードアレイチップ |
| WO2003065464A1 (fr) * | 2002-01-28 | 2003-08-07 | Nichia Corporation | Dispositif a semi-conducteur a base de nitrure comprenant un substrat de support, et son procede de realisation |
| TW577178B (en) * | 2002-03-04 | 2004-02-21 | United Epitaxy Co Ltd | High efficient reflective metal layer of light emitting diode |
| US6903381B2 (en) | 2003-04-24 | 2005-06-07 | Opto Tech Corporation | Light-emitting diode with cavity containing a filler |
| KR100670928B1 (ko) | 2004-11-29 | 2007-01-17 | 서울옵토디바이스주식회사 | ＧａＮ계 화합물 반도체 발광 소자 및 그 제조 방법 |
| US7335924B2 (en) * | 2005-07-12 | 2008-02-26 | Visual Photonics Epitaxy Co., Ltd. | High-brightness light emitting diode having reflective layer |
| KR100640496B1 (ko) * | 2005-11-23 | 2006-11-01 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 |
| JP4946195B2 (ja) * | 2006-06-19 | 2012-06-06 | サンケン電気株式会社 | 半導体発光素子及びその製造方法 |
| JP5126875B2 (ja) * | 2006-08-11 | 2013-01-23 | シャープ株式会社 | 窒化物半導体発光素子の製造方法 |
| KR100867541B1 (ko) * | 2006-11-14 | 2008-11-06 | 삼성전기주식회사 | 수직형 발광 소자의 제조 방법 |
| DE102007029370A1 (de) * | 2007-05-04 | 2008-11-06 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips |
| US8124991B2 (en) | 2007-07-26 | 2012-02-28 | The Regents Of The University Of California | Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency |
| JP5223102B2 (ja) | 2007-08-08 | 2013-06-26 | 豊田合成株式会社 | フリップチップ型発光素子 |
| US8026527B2 (en) * | 2007-12-06 | 2011-09-27 | Bridgelux, Inc. | LED structure |
| TWI370560B (en) * | 2007-12-14 | 2012-08-11 | Delta Electronics Inc | Light-emitting diode device and manufacturing method thereof |
-
2009
- 2009-02-17 KR KR1020090013157A patent/KR101014136B1/ko active IP Right Grant
-
2010
- 2010-02-15 EP EP11158615.2A patent/EP2328189B1/de not_active Not-in-force
- 2010-02-15 AT AT10153590T patent/ATE527697T1/de not_active IP Right Cessation
- 2010-02-15 EP EP10153590A patent/EP2219240B1/de not_active Not-in-force
- 2010-02-16 US US12/706,465 patent/US8324643B2/en active Active
- 2010-02-20 CN CN2010101215572A patent/CN101807635B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100093977A (ko) | 2010-08-26 |
| EP2219240B1 (de) | 2011-10-05 |
| EP2328189B1 (de) | 2016-09-07 |
| KR101014136B1 (ko) | 2011-02-10 |
| US8324643B2 (en) | 2012-12-04 |
| EP2219240A3 (de) | 2010-09-01 |
| CN101807635B (zh) | 2013-04-03 |
| CN101807635A (zh) | 2010-08-18 |
| EP2219240A2 (de) | 2010-08-18 |
| EP2328189A1 (de) | 2011-06-01 |
| US20100207128A1 (en) | 2010-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |