ATE526432T1 - Anwendung von hipims auf silicium durch metallisierung in einer dreidimensionalen wafer- verpackung - Google Patents
Anwendung von hipims auf silicium durch metallisierung in einer dreidimensionalen wafer- verpackungInfo
- Publication number
- ATE526432T1 ATE526432T1 AT08841401T AT08841401T ATE526432T1 AT E526432 T1 ATE526432 T1 AT E526432T1 AT 08841401 T AT08841401 T AT 08841401T AT 08841401 T AT08841401 T AT 08841401T AT E526432 T1 ATE526432 T1 AT E526432T1
- Authority
- AT
- Austria
- Prior art keywords
- electrically
- semiconductor substrate
- conductive material
- pulses
- target
- Prior art date
Links
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 title 1
- 238000001465 metallisation Methods 0.000 title 1
- 238000004806 packaging method and process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 2
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32027—DC powered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98281707P | 2007-10-26 | 2007-10-26 | |
PCT/EP2008/064483 WO2009053479A2 (en) | 2007-10-26 | 2008-10-24 | Application of hipims to through silicon via metallization in three-dimensional wafer packaging |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE526432T1 true ATE526432T1 (de) | 2011-10-15 |
Family
ID=40348131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08841401T ATE526432T1 (de) | 2007-10-26 | 2008-10-24 | Anwendung von hipims auf silicium durch metallisierung in einer dreidimensionalen wafer- verpackung |
Country Status (9)
Country | Link |
---|---|
US (1) | US8475634B2 (de) |
EP (2) | EP2201148B1 (de) |
JP (1) | JP5521136B2 (de) |
KR (2) | KR101603798B1 (de) |
CN (1) | CN101896636B (de) |
AT (1) | ATE526432T1 (de) |
SG (2) | SG185321A1 (de) |
TW (1) | TWI440731B (de) |
WO (1) | WO2009053479A2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101647515B1 (ko) | 2008-04-03 | 2016-08-10 | 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트 | 반도체 칩용 금속 배선 구조의 제조 방법, 그리고 반도체 칩용 금속 배선 구조 제조를 위한 금속 배선 구조 제조 장치의 제어 방법 |
KR20140054421A (ko) | 2009-07-17 | 2014-05-08 | 가부시키가이샤 아루박 | 성막 장치 |
US9249498B2 (en) | 2010-06-28 | 2016-02-02 | Micron Technology, Inc. | Forming memory using high power impulse magnetron sputtering |
CN101838795B (zh) * | 2010-06-30 | 2011-07-20 | 哈尔滨工业大学 | 高功率复合脉冲磁控溅射离子注入与沉积方法 |
CN102453881B (zh) * | 2010-10-27 | 2014-07-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 物理气相沉积设备及磁控溅射方法 |
US9330975B2 (en) | 2012-05-31 | 2016-05-03 | Micron Technology, Inc. | Integrated circuit substrates comprising through-substrate vias and methods of forming through-substrate vias |
US9677168B2 (en) | 2013-10-08 | 2017-06-13 | TPK America, LLC | Touch panel and method for manufacturing the same |
WO2015082547A1 (en) | 2013-12-04 | 2015-06-11 | Oerlikon Advanced Technologies Ag | Sputtering source arrangement, sputtering system and method of manufacturing metal-coated plate-shaped substrates |
US11008650B2 (en) * | 2016-11-03 | 2021-05-18 | Starfire Industries Llc | Compact system for coupling RF power directly into RF linacs |
US12009192B2 (en) * | 2016-11-03 | 2024-06-11 | Starfire Industries Llc | System for coupling RF power into LINACs and bellows coating by magnetron sputtering with kick pulse |
US20190088457A1 (en) * | 2017-09-19 | 2019-03-21 | Applied Materials, Inc. | Sync controller for high impulse magnetron sputtering |
CN111534806A (zh) * | 2020-06-30 | 2020-08-14 | 北京大学深圳研究生院 | 一种硬质涂层及其制备方法与应用 |
WO2023156117A1 (en) | 2022-02-18 | 2023-08-24 | Evatec Ag | Vacuum layer deposition apparatus and method of depositing a layer on a substrate, especially on a substrate comprising indentations in the surface to be coated |
US20240167147A1 (en) * | 2022-11-18 | 2024-05-23 | Applied Materials, Inc. | Apparatus and methods for depositing material within a through via |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2598062B2 (ja) * | 1988-01-29 | 1997-04-09 | 株式会社日立製作所 | 基板バイアス方式のマグネトロンスパッタリング方法及びその装置 |
JP3799073B2 (ja) * | 1994-11-04 | 2006-07-19 | 株式会社日立製作所 | ドライエッチング方法 |
JPH11509049A (ja) * | 1996-04-26 | 1999-08-03 | ソニー株式会社 | 高アスペクト比を有するコンタクトホールに平坦な配線膜及びプラグを形成する改善された成膜装置及び成膜方法 |
JPH10237639A (ja) * | 1997-02-24 | 1998-09-08 | Anelva Corp | 集積回路用バリア膜を作成するスパッタリング装置 |
JP3815843B2 (ja) * | 1997-04-14 | 2006-08-30 | キヤノンアネルバ株式会社 | スパッタリング装置 |
US5830330A (en) * | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
US5976327A (en) * | 1997-12-12 | 1999-11-02 | Applied Materials, Inc. | Step coverage and overhang improvement by pedestal bias voltage modulation |
US6203862B1 (en) * | 1998-05-13 | 2001-03-20 | Intevac, Inc. | Processing systems with dual ion sources |
US6183614B1 (en) * | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
US6254745B1 (en) * | 1999-02-19 | 2001-07-03 | Tokyo Electron Limited | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source |
SG87187A1 (en) * | 1999-10-18 | 2002-03-19 | Applied Materials Inc | Pvd-imp tungsten and tungsten nitride as a liner, barrier and/or seed layer for tungsten, aluminium and copper applications |
US6350353B2 (en) * | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
US6344419B1 (en) * | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
US6544895B1 (en) * | 2000-08-17 | 2003-04-08 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
US6413382B1 (en) * | 2000-11-03 | 2002-07-02 | Applied Materials, Inc. | Pulsed sputtering with a small rotating magnetron |
US6755945B2 (en) * | 2001-05-04 | 2004-06-29 | Tokyo Electron Limited | Ionized PVD with sequential deposition and etching |
JP4614578B2 (ja) * | 2001-06-01 | 2011-01-19 | キヤノンアネルバ株式会社 | スパッタ成膜応用のためのプラズマ処理装置 |
JP4024053B2 (ja) * | 2002-02-08 | 2007-12-19 | キヤノンアネルバ株式会社 | 高周波プラズマ処理方法及び高周波プラズマ処理装置 |
JP2004162138A (ja) * | 2002-11-14 | 2004-06-10 | Anelva Corp | プラズマ支援スパッタ成膜装置 |
US7081408B2 (en) * | 2004-10-28 | 2006-07-25 | Intel Corporation | Method of creating a tapered via using a receding mask and resulting structure |
-
2008
- 2008-10-24 KR KR1020107010976A patent/KR101603798B1/ko active IP Right Grant
- 2008-10-24 EP EP08841401A patent/EP2201148B1/de active Active
- 2008-10-24 EP EP11182928.9A patent/EP2426232B1/de active Active
- 2008-10-24 US US12/257,570 patent/US8475634B2/en active Active
- 2008-10-24 SG SG2012077913A patent/SG185321A1/en unknown
- 2008-10-24 KR KR1020167005354A patent/KR20160031034A/ko active Search and Examination
- 2008-10-24 WO PCT/EP2008/064483 patent/WO2009053479A2/en active Application Filing
- 2008-10-24 SG SG10201603048QA patent/SG10201603048QA/en unknown
- 2008-10-24 CN CN200880113829.5A patent/CN101896636B/zh active Active
- 2008-10-24 JP JP2010530476A patent/JP5521136B2/ja active Active
- 2008-10-24 AT AT08841401T patent/ATE526432T1/de not_active IP Right Cessation
- 2008-10-27 TW TW097141136A patent/TWI440731B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN101896636B (zh) | 2013-01-02 |
JP2011500967A (ja) | 2011-01-06 |
US20090111216A1 (en) | 2009-04-30 |
WO2009053479A2 (en) | 2009-04-30 |
SG10201603048QA (en) | 2016-05-30 |
EP2201148B1 (de) | 2011-09-28 |
KR20100084664A (ko) | 2010-07-27 |
CN101896636A (zh) | 2010-11-24 |
US8475634B2 (en) | 2013-07-02 |
KR101603798B1 (ko) | 2016-03-15 |
KR20160031034A (ko) | 2016-03-21 |
JP5521136B2 (ja) | 2014-06-11 |
SG185321A1 (en) | 2012-11-29 |
TW200923116A (en) | 2009-06-01 |
EP2201148A2 (de) | 2010-06-30 |
WO2009053479A3 (en) | 2009-11-05 |
EP2426232A2 (de) | 2012-03-07 |
EP2426232B1 (de) | 2017-08-23 |
EP2426232A3 (de) | 2012-06-27 |
TWI440731B (zh) | 2014-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |