ATE525745T1 - Verfahren zur herstellung eines bipolaren transistors und in diesem verfahren hergestellter bipolarer transistor - Google Patents
Verfahren zur herstellung eines bipolaren transistors und in diesem verfahren hergestellter bipolarer transistorInfo
- Publication number
- ATE525745T1 ATE525745T1 AT07766732T AT07766732T ATE525745T1 AT E525745 T1 ATE525745 T1 AT E525745T1 AT 07766732 T AT07766732 T AT 07766732T AT 07766732 T AT07766732 T AT 07766732T AT E525745 T1 ATE525745 T1 AT E525745T1
- Authority
- AT
- Austria
- Prior art keywords
- bipolar transistor
- cover layer
- producing
- selectively
- sige
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 2
- 238000005137 deposition process Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP06116194 | 2006-06-28 | ||
| PCT/IB2007/052226 WO2008001249A1 (en) | 2006-06-28 | 2007-06-12 | Method of manufacturing a bipolar transistor and bipolar transitor obtained therewith |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE525745T1 true ATE525745T1 (de) | 2011-10-15 |
Family
ID=38594831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT07766732T ATE525745T1 (de) | 2006-06-28 | 2007-06-12 | Verfahren zur herstellung eines bipolaren transistors und in diesem verfahren hergestellter bipolarer transistor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8133791B2 (de) |
| EP (1) | EP2038918B1 (de) |
| CN (1) | CN101479837B (de) |
| AT (1) | ATE525745T1 (de) |
| TW (1) | TW200811960A (de) |
| WO (1) | WO2008001249A1 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7947552B2 (en) * | 2008-04-21 | 2011-05-24 | Infineon Technologies Ag | Process for the simultaneous deposition of crystalline and amorphous layers with doping |
| EP2281302B1 (de) | 2008-05-21 | 2012-12-26 | Nxp B.V. | Verfahren zur herstellung eines halbleiterbauelements eines bipolaren transistors |
| EP2581930B1 (de) | 2011-10-11 | 2014-06-04 | Nxp B.V. | Verfahren zur Herstellung eines bipolaren Transistors, bipolarer Transistor und integrierte Schaltung |
| EP2565911B1 (de) * | 2011-09-02 | 2014-08-20 | Nxp B.V. | Verfahren zur Herstellung einer integrierten Schaltung mit einem bipolaren Transistor und integrierte Schaltung |
| TWI743788B (zh) * | 2020-05-18 | 2021-10-21 | 力晶積成電子製造股份有限公司 | 電晶體及其製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2655052B2 (ja) * | 1993-10-07 | 1997-09-17 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5620908A (en) * | 1994-09-19 | 1997-04-15 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device comprising BiCMOS transistor |
| JP2746225B2 (ja) * | 1995-10-16 | 1998-05-06 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| US6531369B1 (en) * | 2000-03-01 | 2003-03-11 | Applied Micro Circuits Corporation | Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe) |
| FR2806831B1 (fr) * | 2000-03-27 | 2003-09-19 | St Microelectronics Sa | Procede de fabrication d'un transistor bipolaire de type double-polysilicium auto-aligne a base a heterojonction et transistor correspondant |
| US6509242B2 (en) * | 2001-01-12 | 2003-01-21 | Agere Systems Inc. | Heterojunction bipolar transistor |
| US6869852B1 (en) * | 2004-01-09 | 2005-03-22 | International Business Machines Corporation | Self-aligned raised extrinsic base bipolar transistor structure and method |
-
2007
- 2007-06-12 WO PCT/IB2007/052226 patent/WO2008001249A1/en active Application Filing
- 2007-06-12 EP EP07766732A patent/EP2038918B1/de active Active
- 2007-06-12 CN CN2007800241129A patent/CN101479837B/zh active Active
- 2007-06-12 US US12/306,653 patent/US8133791B2/en active Active
- 2007-06-12 AT AT07766732T patent/ATE525745T1/de not_active IP Right Cessation
- 2007-06-25 TW TW096122862A patent/TW200811960A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008001249A1 (en) | 2008-01-03 |
| US20100068863A1 (en) | 2010-03-18 |
| TW200811960A (en) | 2008-03-01 |
| US8133791B2 (en) | 2012-03-13 |
| CN101479837A (zh) | 2009-07-08 |
| CN101479837B (zh) | 2010-10-06 |
| EP2038918A1 (de) | 2009-03-25 |
| EP2038918B1 (de) | 2011-09-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |