ATE523901T1 - Herstellungsverfahren für einen thermoelektrischen wandler - Google Patents

Herstellungsverfahren für einen thermoelektrischen wandler

Info

Publication number
ATE523901T1
ATE523901T1 AT07021184T AT07021184T ATE523901T1 AT E523901 T1 ATE523901 T1 AT E523901T1 AT 07021184 T AT07021184 T AT 07021184T AT 07021184 T AT07021184 T AT 07021184T AT E523901 T1 ATE523901 T1 AT E523901T1
Authority
AT
Austria
Prior art keywords
type semiconductor
raw material
honeycomb
thermoelectric converter
production method
Prior art date
Application number
AT07021184T
Other languages
English (en)
Inventor
Kazushige Ohno
Original Assignee
Ibiden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibiden Co Ltd filed Critical Ibiden Co Ltd
Application granted granted Critical
Publication of ATE523901T1 publication Critical patent/ATE523901T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Ceramic Products (AREA)
AT07021184T 2007-03-15 2007-10-30 Herstellungsverfahren für einen thermoelektrischen wandler ATE523901T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055260 WO2008111220A1 (ja) 2007-03-15 2007-03-15 熱電変換装置の製造方法

Publications (1)

Publication Number Publication Date
ATE523901T1 true ATE523901T1 (de) 2011-09-15

Family

ID=38962084

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07021184T ATE523901T1 (de) 2007-03-15 2007-10-30 Herstellungsverfahren für einen thermoelektrischen wandler

Country Status (4)

Country Link
US (1) US20080223504A1 (de)
EP (1) EP1970972B1 (de)
AT (1) ATE523901T1 (de)
WO (1) WO2008111220A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008111219A1 (ja) * 2007-03-15 2008-09-18 Ibiden Co., Ltd. 熱電変換装置
JPWO2008111218A1 (ja) * 2007-03-15 2010-06-24 イビデン株式会社 熱電変換装置
KR101498047B1 (ko) * 2013-04-19 2015-03-11 주식회사 리빙케어 순간 냉수용 냉각장치
CN105702848A (zh) * 2014-11-27 2016-06-22 中国电子科技集团公司第十八研究所 一种p-n型温差电元件性能匹配方法
US10690551B2 (en) 2016-02-12 2020-06-23 Rhode Island Council On Postsecondary Education Temperature and thermal gradient sensor for ceramic matrix composites and methods of preparation thereof
WO2018006075A1 (en) * 2016-07-01 2018-01-04 Rhode Island Council On Postsecondary Education High resolution strain gages for ceramic matrix composites and methods of manufacture thereof
US10428713B2 (en) 2017-09-07 2019-10-01 Denso International America, Inc. Systems and methods for exhaust heat recovery and heat storage
US10782190B1 (en) 2017-12-14 2020-09-22 University Of Rhode Island Board Of Trustees Resistance temperature detector (RTD) for ceramic matrix composites
JP2019207979A (ja) * 2018-05-30 2019-12-05 イビデン株式会社 プリント配線板
US11703471B1 (en) 2018-12-20 2023-07-18 University Of Rhode Island Board Of Trustees Trace detection of chemical compounds via catalytic decomposition and redox reactions
JP7518623B2 (ja) * 2020-01-27 2024-07-18 株式会社日立製作所 熱電変換モジュール
CN115188877B (zh) * 2022-07-27 2025-01-03 武汉理工大学 一种制备强织构和高热电性能柔性热电薄膜的方法
CN119841646B (zh) * 2025-02-18 2025-12-02 厦门芯华特瓷新材料有限公司 一种高球形度氮化铝导热填料的制备方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5853622A (en) * 1990-02-09 1998-12-29 Ormet Corporation Transient liquid phase sintering conductive adhesives
JP3510384B2 (ja) * 1995-06-26 2004-03-29 日本政策投資銀行 熱電変換素子の製造方法
JPH09139526A (ja) * 1995-11-13 1997-05-27 Ngk Insulators Ltd 熱電気変換モジュールおよびその製造方法
JPH09199765A (ja) * 1995-11-13 1997-07-31 Ngk Insulators Ltd 熱電気変換モジュールおよびその製造方法
EP0874406A3 (de) * 1997-04-23 2000-12-13 Matsushita Electric Industrial Co., Ltd. Ein, auf Co-Sb beruhendes, thermoelektrisches Material und Herstellungsverfahren dafür
JPH10321921A (ja) * 1997-05-22 1998-12-04 Ngk Insulators Ltd 熱電気変換モジュールおよびその製造方法
JPH11243169A (ja) * 1998-02-24 1999-09-07 Nissan Motor Co Ltd 電子冷却モジュールおよびその製造方法
US6127619A (en) * 1998-06-08 2000-10-03 Ormet Corporation Process for producing high performance thermoelectric modules
JP2000236117A (ja) * 1999-02-16 2000-08-29 Ngk Insulators Ltd 電気素子
US6297441B1 (en) * 2000-03-24 2001-10-02 Chris Macris Thermoelectric device and method of manufacture
JP2001320097A (ja) * 2000-05-09 2001-11-16 Komatsu Ltd 熱電素子とその製造方法及びこれを用いた熱電モジュール
JP2002076541A (ja) * 2000-08-25 2002-03-15 Sony Corp Ｂｇａ実装プリント配線板
JP2002158379A (ja) * 2000-11-21 2002-05-31 National Institute Of Advanced Industrial & Technology 熱電変換素子集合体、熱電モジュール及び熱電変換素子集合体の製造方法
JP2003332644A (ja) * 2002-05-16 2003-11-21 Komatsu Ltd 熱電モジュール製造方法および熱電モジュール製造用治具
JP2004228288A (ja) * 2003-01-22 2004-08-12 Toyota Motor Corp 熱電材料とその製造方法
JP4103812B2 (ja) * 2003-03-05 2008-06-18 株式会社Ｉｈｉ 鋳型の製造方法
WO2005015649A1 (ja) * 2003-08-08 2005-02-17 Nagamine Manufacturing Co.,Ltd. 熱電変換素子およびその製造方法
JP3828924B2 (ja) * 2004-01-19 2006-10-04 松下電器産業株式会社 熱電変換素子とその製造方法、およびこの素子を用いた熱電変換装置
US7254033B2 (en) * 2004-08-19 2007-08-07 Behdad Jafari Method and apparatus for heat dissipation
JP4584035B2 (ja) * 2005-05-31 2010-11-17 トヨタ自動車株式会社 熱電モジュール
JP3879769B1 (ja) * 2006-02-22 2007-02-14 株式会社村田製作所 熱電変換モジュールおよびその製造方法
JPWO2008111218A1 (ja) * 2007-03-15 2010-06-24 イビデン株式会社 熱電変換装置
WO2008111219A1 (ja) * 2007-03-15 2008-09-18 Ibiden Co., Ltd. 熱電変換装置

Also Published As

Publication number Publication date
EP1970972B1 (de) 2011-09-07
US20080223504A1 (en) 2008-09-18
EP1970972A1 (de) 2008-09-17
WO2008111220A1 (ja) 2008-09-18

Similar Documents

Publication Publication Date Title
ATE523901T1 (de) Herstellungsverfahren für einen thermoelektrischen wandler
EP2548226A4 (de) Multichip-paket mit versetzter matrizenstapelung und herstellungsverfahren dafür
PH12012501850A1 (en) Structure, chip for localized surface plasmon resonance sensor, localized surface plasmon resonance sensor, and manufacturing methods therefor
ATE474250T1 (de) Monoblock-doppelspirale und ihr herstellungsverfahren
TWD136325S1 (zh) 垂飾
SG178879A1 (en) Mold release film, and method for manufacturing light emitting diode
TW200629571A (en) Semiconductor device, electronic device, and method of manufacturing semiconductor device
MX2010010458A (es) Dispositivo y metodo para producir estructura de panal sellada.
CL2010000979A1 (es) Metodo para fabricar un polvo nutricional que comprende: preparar un polvo base; e introducir en el polvo nutricional base un carbohidrato y una lecitina en polvo; formula en polvo para lactantes que comprende una fuente de lipidos, una fuente de carbohifratos, y lecitina en polvo.
EP2559681A3 (de) Organometallische Verbindungszubereitung
WO2010096473A3 (en) Semiconductor chip with reinforcement layer
SG155259A1 (en) Multi-layer pipe and method for its production
EP2784835A4 (de) Thermoelektrisches material, herstellungsverfahren dafür, und thermoelektrisches wandlermodul damit
WO2012026678A3 (en) Thermoelectric module comprising thermoelectric element doped with nanoparticles and manufacturing method of the same
EP2488360A4 (de) Nanokomposit und herstellungsverfahren dafür
EP2556753A4 (de) Instant-nudeln und herstellungsverfahren dafür
MY178708A (en) Photovoltaic device and method of formation
WO2012108767A3 (en) A method of manufacturing a solar cell and solar cell thus obtained
EA201001572A1 (ru) Способ и устройство для производства поглощающих изделий
TW201130104A (en) Semiconductor structure
TW200944078A (en) A manufacturing method for a soft-hard board
IN2012DN02966A (de)
CL2014000674A1 (es) Procedimiento e instalacion para la fabricacion de gas de sintesis a traves de gasificacion de una biomasa en un lecho fluidizado, en donde la biomasa es alimentada a un gasificador de lecho fluidizado y el gas de sintesis se pone en contacto con ceramicas getter.
EP3041030A4 (de) Zusammensetzung zur bildung einer n-leitenden diffusionsschicht, verfahren zur bildung einer n-leitenden diffusionsschicht, verfahren zur herstellung eines halbleitersubstrats mit einer n-leitenden diffusionsschicht und verfahren zur herstellung eines solarzellenelements
TW201130059A (en) Method for manufacturing a semiconductor structure

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties