WO2012108767A3 - A method of manufacturing a solar cell and solar cell thus obtained - Google Patents
A method of manufacturing a solar cell and solar cell thus obtained Download PDFInfo
- Publication number
- WO2012108767A3 WO2012108767A3 PCT/NL2012/050068 NL2012050068W WO2012108767A3 WO 2012108767 A3 WO2012108767 A3 WO 2012108767A3 NL 2012050068 W NL2012050068 W NL 2012050068W WO 2012108767 A3 WO2012108767 A3 WO 2012108767A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solar cell
- manufacturing
- emitters
- boron
- doping
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000001627 detrimental effect Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The process includes the manufacturing of a solar cell comprising boron doping after phosphorous doping, so as to obtain a substrate (10) with a double-diffused field region (33) and emitters (30), suitably selective emitters, together forming a p-i-n-diode construction. In order to prevent the formation of boron rich layers detrimental for carrier lifetime, a diffusion resistance layer (22) is applied within the through-holes (20).
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2006164 | 2011-02-08 | ||
NL2006164A NL2006164C2 (en) | 2011-02-08 | 2011-02-08 | A method of manufacturing a solar cell and solar cell thus obtained. |
NL2006171A NL2006171C2 (en) | 2011-02-09 | 2011-02-09 | A photovoltaic cell device and a solar panel. |
NL2006171 | 2011-02-09 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2012108767A2 WO2012108767A2 (en) | 2012-08-16 |
WO2012108767A3 true WO2012108767A3 (en) | 2013-01-17 |
WO2012108767A9 WO2012108767A9 (en) | 2013-03-07 |
Family
ID=45755471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/NL2012/050068 WO2012108767A2 (en) | 2011-02-08 | 2012-02-08 | A method of manufacturing a solar cell and solar cell thus obtained |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2012108767A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105070787A (en) * | 2015-08-18 | 2015-11-18 | 东莞南玻光伏科技有限公司 | Crystalline silicon solar cell and diffusion method therefor |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150004488A (en) * | 2013-07-02 | 2015-01-13 | 한화케미칼 주식회사 | Method of preparing the emitter wrap-through type solar cell |
US11145774B2 (en) | 2018-05-30 | 2021-10-12 | Solar Inventions Llc | Configurable solar cells |
CN113851562A (en) * | 2021-12-01 | 2021-12-28 | 南京日托光伏新能源有限公司 | Preparation method of weldable double-sided battery suitable for heterojunction MWT |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5468652A (en) * | 1993-07-14 | 1995-11-21 | Sandia Corporation | Method of making a back contacted solar cell |
US20080174028A1 (en) * | 2007-01-23 | 2008-07-24 | General Electric Company | Method and Apparatus For A Semiconductor Structure Forming At Least One Via |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3903428A (en) | 1973-12-28 | 1975-09-02 | Hughes Aircraft Co | Solar cell contact design |
EP0881694A1 (en) | 1997-05-30 | 1998-12-02 | Interuniversitair Micro-Elektronica Centrum Vzw | Solar cell and process of manufacturing the same |
US20110208372A1 (en) | 2008-10-01 | 2011-08-25 | Sunsil A/S | Power generation system and method of operating a power generation system |
DE102009031151A1 (en) | 2008-10-31 | 2010-05-12 | Bosch Solar Energy Ag | Solar cell and process for its production |
-
2012
- 2012-02-08 WO PCT/NL2012/050068 patent/WO2012108767A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5468652A (en) * | 1993-07-14 | 1995-11-21 | Sandia Corporation | Method of making a back contacted solar cell |
US20080174028A1 (en) * | 2007-01-23 | 2008-07-24 | General Electric Company | Method and Apparatus For A Semiconductor Structure Forming At Least One Via |
Non-Patent Citations (3)
Title |
---|
GEE J M ET AL: "Emitter wrap-through solar cell", PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE. LOUISVILLE, MAY 10 - 14, 1993; [PROCEEDINGS OF THE PHOTOVOLTAIC SPECIALISTS CONFERENCE], NEW YORK, IEEE, US, vol. CONF. 23, 10 May 1993 (1993-05-10), pages 265 - 270, XP010113396, ISBN: 978-0-7803-1220-3, DOI: 10.1109/PVSC.1993.347173 * |
SMITH D D ET AL: "REVIEW OF BACK CONTACT SILICON SOLAR CELLS FOR LOW COST APPLICATION", 16TH. E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE. GLASCOW, UNITED KINGDOM, MAY 1 - 5, 2000; [PROCEEDINGS OF THE INTERNATIONAL PHOTOVOLTAIC SOLAR ENERGY CONFERENCE], LONDON : JAMES & JAMES LTD, GB, vol. CONF. 16, 1 May 2000 (2000-05-01), pages 1104 - 1107, XP001138830, ISBN: 978-1-902916-18-7 * |
ZHAO J ET AL: "High-efficiency PERL and PERT silicon solar cells on FZ and MCZ substrates", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 65, no. 1-4, 1 January 2001 (2001-01-01), pages 429 - 435, XP004217148, ISSN: 0927-0248, DOI: 10.1016/S0927-0248(00)00123-9 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105070787A (en) * | 2015-08-18 | 2015-11-18 | 东莞南玻光伏科技有限公司 | Crystalline silicon solar cell and diffusion method therefor |
Also Published As
Publication number | Publication date |
---|---|
WO2012108767A2 (en) | 2012-08-16 |
WO2012108767A9 (en) | 2013-03-07 |
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