ATE522644T1 - Verfahren zur herstellung eines uv- lichtemittierenden hexagonalen bornitridkristalls - Google Patents
Verfahren zur herstellung eines uv- lichtemittierenden hexagonalen bornitridkristallsInfo
- Publication number
- ATE522644T1 ATE522644T1 AT08764820T AT08764820T ATE522644T1 AT E522644 T1 ATE522644 T1 AT E522644T1 AT 08764820 T AT08764820 T AT 08764820T AT 08764820 T AT08764820 T AT 08764820T AT E522644 T1 ATE522644 T1 AT E522644T1
- Authority
- AT
- Austria
- Prior art keywords
- boron nitride
- mixture
- hexagonal boron
- producing
- nitride crystal
- Prior art date
Links
- 229910052582 BN Inorganic materials 0.000 title abstract 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052594 sapphire Inorganic materials 0.000 abstract 2
- 239000010980 sapphire Substances 0.000 abstract 2
- 239000002904 solvent Substances 0.000 abstract 2
- 229910052723 transition metal Inorganic materials 0.000 abstract 2
- 150000003624 transition metals Chemical class 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- 238000001953 recrystallisation Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000002194 synthesizing effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/02—Particle morphology depicted by an image obtained by optical microscopy
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007137365 | 2007-05-24 | ||
| PCT/JP2008/059851 WO2008146865A1 (ja) | 2007-05-24 | 2008-05-22 | 紫外線発光六方晶窒化ホウ素結晶体の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE522644T1 true ATE522644T1 (de) | 2011-09-15 |
Family
ID=40075100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08764820T ATE522644T1 (de) | 2007-05-24 | 2008-05-22 | Verfahren zur herstellung eines uv- lichtemittierenden hexagonalen bornitridkristalls |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7811909B2 (de) |
| EP (1) | EP2154273B1 (de) |
| JP (1) | JP5257995B2 (de) |
| AT (1) | ATE522644T1 (de) |
| WO (1) | WO2008146865A1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022071245A1 (ja) * | 2020-09-30 | 2022-04-07 | デンカ株式会社 | 六方晶窒化ホウ素粉末、及び焼結体の製造方法 |
| WO2024224794A1 (ja) * | 2023-04-26 | 2024-10-31 | 株式会社トクヤマ | 六方晶窒化ホウ素粉末およびその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100490205C (zh) * | 2003-07-10 | 2009-05-20 | 国际商业机器公司 | 淀积金属硫族化物膜的方法和制备场效应晶体管的方法 |
| JP4340753B2 (ja) * | 2003-11-18 | 2009-10-07 | 独立行政法人物質・材料研究機構 | 高輝度紫外線発光六方晶窒化ホウ素単結晶とその製造方法及び高輝度紫外線発光素子 |
| US7795050B2 (en) * | 2005-08-12 | 2010-09-14 | Samsung Electronics Co., Ltd. | Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same |
| WO2007029655A1 (ja) * | 2005-09-05 | 2007-03-15 | Matsushita Electric Industrial Co., Ltd. | 六方晶系窒化物単結晶の製造方法、六方晶系窒化物半導体結晶及び六方晶系窒化物単結晶ウエハの製造方法 |
| JP2007220865A (ja) * | 2006-02-16 | 2007-08-30 | Sumitomo Chemical Co Ltd | ３族窒化物半導体発光素子およびその製造方法 |
| JP4879614B2 (ja) * | 2006-03-13 | 2012-02-22 | 住友化学株式会社 | ３−５族窒化物半導体基板の製造方法 |
| JP4863461B2 (ja) * | 2006-06-30 | 2012-01-25 | 独立行政法人物質・材料研究機構 | 六方晶窒化ホウ素結晶体を製造する方法 |
-
2008
- 2008-05-22 WO PCT/JP2008/059851 patent/WO2008146865A1/ja not_active Ceased
- 2008-05-22 US US12/451,641 patent/US7811909B2/en active Active
- 2008-05-22 AT AT08764820T patent/ATE522644T1/de not_active IP Right Cessation
- 2008-05-22 EP EP08764820A patent/EP2154273B1/de not_active Not-in-force
- 2008-05-22 JP JP2009516349A patent/JP5257995B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008146865A1 (ja) | 2008-12-04 |
| JPWO2008146865A1 (ja) | 2010-08-19 |
| EP2154273B1 (de) | 2011-08-31 |
| EP2154273A4 (de) | 2010-12-01 |
| US7811909B2 (en) | 2010-10-12 |
| JP5257995B2 (ja) | 2013-08-07 |
| US20100120187A1 (en) | 2010-05-13 |
| EP2154273A1 (de) | 2010-02-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |