ATE512117T1 - Verfahren zur herstellung von si durch reduktion von sicl4 mit flüssigem zn - Google Patents

Verfahren zur herstellung von si durch reduktion von sicl4 mit flüssigem zn

Info

Publication number
ATE512117T1
ATE512117T1 AT06723898T AT06723898T ATE512117T1 AT E512117 T1 ATE512117 T1 AT E512117T1 AT 06723898 T AT06723898 T AT 06723898T AT 06723898 T AT06723898 T AT 06723898T AT E512117 T1 ATE512117 T1 AT E512117T1
Authority
AT
Austria
Prior art keywords
sicu
high purity
liquid
sicl4
producing
Prior art date
Application number
AT06723898T
Other languages
English (en)
Inventor
Eric Robert
Tjakko Zijlema
Original Assignee
Umicore Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Umicore Sa filed Critical Umicore Sa
Application granted granted Critical
Publication of ATE512117T1 publication Critical patent/ATE512117T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
AT06723898T 2005-03-24 2006-03-24 Verfahren zur herstellung von si durch reduktion von sicl4 mit flüssigem zn ATE512117T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP05075701 2005-03-24
US66535205P 2005-03-28 2005-03-28
EP05076550 2005-07-07
PCT/EP2006/002937 WO2006100114A1 (en) 2005-03-24 2006-03-24 Process for the production of si by reduction of siclj with liquid zn

Publications (1)

Publication Number Publication Date
ATE512117T1 true ATE512117T1 (de) 2011-06-15

Family

ID=38792427

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06723898T ATE512117T1 (de) 2005-03-24 2006-03-24 Verfahren zur herstellung von si durch reduktion von sicl4 mit flüssigem zn

Country Status (13)

Country Link
US (1) US7943109B2 (de)
EP (1) EP1866248B1 (de)
JP (1) JP2008534415A (de)
KR (1) KR20070112407A (de)
AT (1) ATE512117T1 (de)
AU (1) AU2006226462A1 (de)
BR (1) BRPI0609475A2 (de)
CA (1) CA2601333A1 (de)
EA (1) EA012213B1 (de)
MX (1) MX2007011733A (de)
NO (1) NO20075392L (de)
TW (1) TW200700316A (de)
WO (1) WO2006100114A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008034576A1 (en) * 2006-09-22 2008-03-27 Umicore PRODUCTION OF Si BY REDUCTION OF SiCL4 WITH LIQUID Zn, AND PURIFICATION PROCESS
WO2008034577A1 (en) * 2006-09-22 2008-03-27 Umicore Process for the production of si by reduction of sihc13 with liquid zn
WO2008034578A1 (en) * 2006-09-22 2008-03-27 Umicore Process for the production of germanium-bearing silicon alloys
NO20071763L (no) 2007-04-02 2008-10-03 Norsk Hydro As Fremgangsmate og reaktor for produksjon av hoyrent silisium
NO20071762L (no) * 2007-04-02 2008-10-03 Norsk Hydro As Fremgangsmate og reaktor for produksjon av hoyrent silisium
NO20071852L (no) * 2007-04-11 2008-10-13 Norsk Hydro As Prosess og utstyr for reduksjon av silisium tetraklorid i sink for fremstilling av silisium med hoy renhet samt sinkklorid
WO2008145236A1 (en) * 2007-05-25 2008-12-04 Umicore Economical process for the production of si by reduction of sicl4 with liquid zn
RU2345950C1 (ru) * 2007-07-17 2009-02-10 Институт металлургии и материаловедения им. А.А. Байкова РАН Способ получения кремния или силицида цинка из диоксида кремния
JP5311930B2 (ja) * 2007-08-29 2013-10-09 住友化学株式会社 シリコンの製造方法
EP2415711A1 (de) 2010-08-05 2012-02-08 Hycore ANS Verfahren und Vorrichtung zu Herstellung und Wiedergewinnung von hochreinem Silizium
TW201402191A (zh) * 2012-07-02 2014-01-16 Hemlock Semiconductor Corp 進行平衡反應並選擇性分離該平衡反應之反應性物種的方法
PL3795539T3 (pl) * 2016-07-27 2023-12-18 Epro Development Limited Ulepszenia w wytwarzaniu nanocząstek krzemu
CN114735708B (zh) * 2022-04-29 2023-06-02 成都理工大学 一种制备低铁铝钙含量硅的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3000726A (en) * 1945-11-14 1961-09-19 Frank H Speeding Production of metals
US2805934A (en) * 1953-06-22 1957-09-10 Du Pont Process of solidifying and remelting zinc
US2804377A (en) * 1954-06-25 1957-08-27 Du Pont Preparation of pure silicon
US2773745A (en) * 1954-07-20 1956-12-11 Du Pont Process for the production of pure silicon in a coarse crystalline form
US2909411A (en) * 1957-01-15 1959-10-20 Du Pont Production of silicon
US3041145A (en) * 1957-07-15 1962-06-26 Robert S Aries Production of pure silicon
FR2407892A1 (fr) * 1977-11-04 1979-06-01 Rhone Poulenc Ind Procede de fabrication de silicium pour la conversion photovoltaique
US4239740A (en) * 1979-05-25 1980-12-16 Westinghouse Electric Corp. Production of high purity silicon by a heterogeneous arc heater reduction
US4755370A (en) * 1982-03-18 1988-07-05 General Electric Company Purification of silicon halides
DE3581848D1 (de) * 1984-07-06 1991-04-04 Wacker Chemie Gmbh Verfahren zur herstellung von siliciumtetrachlorid.
JP3844849B2 (ja) * 1997-06-25 2006-11-15 住友チタニウム株式会社 多結晶シリコンおよび塩化亜鉛の製造方法
JP3844856B2 (ja) 1997-09-11 2006-11-15 住友チタニウム株式会社 高純度シリコンの製造方法
JP2003504295A (ja) * 1999-07-02 2003-02-04 エバーグリーン ソーラー， インコーポレイテッド 結晶リボン成長のエッジメニスカス制御

Also Published As

Publication number Publication date
JP2008534415A (ja) 2008-08-28
WO2006100114A1 (en) 2006-09-28
EP1866248A1 (de) 2007-12-19
MX2007011733A (es) 2007-12-05
US7943109B2 (en) 2011-05-17
AU2006226462A1 (en) 2006-09-28
TW200700316A (en) 2007-01-01
EA200702060A1 (ru) 2008-02-28
US20080181836A1 (en) 2008-07-31
BRPI0609475A2 (pt) 2011-10-11
EP1866248B1 (de) 2011-06-08
EA012213B1 (ru) 2009-08-28
CA2601333A1 (en) 2006-09-28
KR20070112407A (ko) 2007-11-23
NO20075392L (no) 2007-10-23

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