TW200700316A - Process for the production of si by reduction of sicl4 with liquid zn - Google Patents
Process for the production of si by reduction of sicl4 with liquid znInfo
- Publication number
- TW200700316A TW200700316A TW095105254A TW95105254A TW200700316A TW 200700316 A TW200700316 A TW 200700316A TW 095105254 A TW095105254 A TW 095105254A TW 95105254 A TW95105254 A TW 95105254A TW 200700316 A TW200700316 A TW 200700316A
- Authority
- TW
- Taiwan
- Prior art keywords
- sicl4
- high purity
- production
- liquid
- bearing alloy
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000007788 liquid Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 3
- 239000001996 bearing alloy Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009835 boiling Methods 0.000 abstract 1
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP05075701 | 2005-03-24 | ||
| EP05076550 | 2005-07-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200700316A true TW200700316A (en) | 2007-01-01 |
Family
ID=38792427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095105254A TW200700316A (en) | 2005-03-24 | 2006-02-16 | Process for the production of si by reduction of sicl4 with liquid zn |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US7943109B2 (zh) |
| EP (1) | EP1866248B1 (zh) |
| JP (1) | JP2008534415A (zh) |
| KR (1) | KR20070112407A (zh) |
| AT (1) | ATE512117T1 (zh) |
| AU (1) | AU2006226462A1 (zh) |
| BR (1) | BRPI0609475A2 (zh) |
| CA (1) | CA2601333A1 (zh) |
| EA (1) | EA012213B1 (zh) |
| MX (1) | MX2007011733A (zh) |
| NO (1) | NO20075392L (zh) |
| TW (1) | TW200700316A (zh) |
| WO (1) | WO2006100114A1 (zh) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008034578A1 (en) * | 2006-09-22 | 2008-03-27 | Umicore | Process for the production of germanium-bearing silicon alloys |
| WO2008034577A1 (en) * | 2006-09-22 | 2008-03-27 | Umicore | Process for the production of si by reduction of sihc13 with liquid zn |
| WO2008034576A1 (en) * | 2006-09-22 | 2008-03-27 | Umicore | PRODUCTION OF Si BY REDUCTION OF SiCL4 WITH LIQUID Zn, AND PURIFICATION PROCESS |
| NO20071763L (no) * | 2007-04-02 | 2008-10-03 | Norsk Hydro As | Fremgangsmate og reaktor for produksjon av hoyrent silisium |
| NO20071762L (no) * | 2007-04-02 | 2008-10-03 | Norsk Hydro As | Fremgangsmate og reaktor for produksjon av hoyrent silisium |
| NO20071852L (no) * | 2007-04-11 | 2008-10-13 | Norsk Hydro As | Prosess og utstyr for reduksjon av silisium tetraklorid i sink for fremstilling av silisium med hoy renhet samt sinkklorid |
| WO2008145236A1 (en) * | 2007-05-25 | 2008-12-04 | Umicore | Economical process for the production of si by reduction of sicl4 with liquid zn |
| JP5311930B2 (ja) * | 2007-08-29 | 2013-10-09 | 住友化学株式会社 | シリコンの製造方法 |
| EP2415711A1 (en) | 2010-08-05 | 2012-02-08 | Hycore ANS | Process and apparatus for the preparation and recovery of high purity silicon |
| TW201402191A (zh) * | 2012-07-02 | 2014-01-16 | Hemlock Semiconductor Corp | 進行平衡反應並選擇性分離該平衡反應之反應性物種的方法 |
| HUE062896T2 (hu) * | 2016-07-27 | 2023-12-28 | Epro Development Ltd | Továbbfejlesztett eljárás szilícium nanorészecskék elõállítására és annak alkalmazása |
| CN114735708B (zh) * | 2022-04-29 | 2023-06-02 | 成都理工大学 | 一种制备低铁铝钙含量硅的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3000726A (en) * | 1945-11-14 | 1961-09-19 | Frank H Speeding | Production of metals |
| US2805934A (en) * | 1953-06-22 | 1957-09-10 | Du Pont | Process of solidifying and remelting zinc |
| US2804377A (en) * | 1954-06-25 | 1957-08-27 | Du Pont | Preparation of pure silicon |
| US2773745A (en) * | 1954-07-20 | 1956-12-11 | Du Pont | Process for the production of pure silicon in a coarse crystalline form |
| US2909411A (en) * | 1957-01-15 | 1959-10-20 | Du Pont | Production of silicon |
| US3041145A (en) * | 1957-07-15 | 1962-06-26 | Robert S Aries | Production of pure silicon |
| FR2407892A1 (fr) * | 1977-11-04 | 1979-06-01 | Rhone Poulenc Ind | Procede de fabrication de silicium pour la conversion photovoltaique |
| US4239740A (en) * | 1979-05-25 | 1980-12-16 | Westinghouse Electric Corp. | Production of high purity silicon by a heterogeneous arc heater reduction |
| US4755370A (en) * | 1982-03-18 | 1988-07-05 | General Electric Company | Purification of silicon halides |
| DE3581848D1 (de) * | 1984-07-06 | 1991-04-04 | Wacker Chemie Gmbh | Verfahren zur herstellung von siliciumtetrachlorid. |
| JP3844849B2 (ja) | 1997-06-25 | 2006-11-15 | 住友チタニウム株式会社 | 多結晶シリコンおよび塩化亜鉛の製造方法 |
| JP3844856B2 (ja) | 1997-09-11 | 2006-11-15 | 住友チタニウム株式会社 | 高純度シリコンの製造方法 |
| JP2003504295A (ja) * | 1999-07-02 | 2003-02-04 | エバーグリーン ソーラー， インコーポレイテッド | 結晶リボン成長のエッジメニスカス制御 |
-
2006
- 2006-02-16 TW TW095105254A patent/TW200700316A/zh unknown
- 2006-03-24 EA EA200702060A patent/EA012213B1/ru not_active IP Right Cessation
- 2006-03-24 CA CA002601333A patent/CA2601333A1/en not_active Abandoned
- 2006-03-24 US US11/909,353 patent/US7943109B2/en not_active Expired - Fee Related
- 2006-03-24 JP JP2008502348A patent/JP2008534415A/ja not_active Withdrawn
- 2006-03-24 AU AU2006226462A patent/AU2006226462A1/en not_active Abandoned
- 2006-03-24 WO PCT/EP2006/002937 patent/WO2006100114A1/en active Application Filing
- 2006-03-24 AT AT06723898T patent/ATE512117T1/de not_active IP Right Cessation
- 2006-03-24 EP EP06723898A patent/EP1866248B1/en not_active Not-in-force
- 2006-03-24 KR KR1020077023446A patent/KR20070112407A/ko not_active Application Discontinuation
- 2006-03-24 BR BRPI0609475-9A patent/BRPI0609475A2/pt not_active IP Right Cessation
- 2006-03-24 MX MX2007011733A patent/MX2007011733A/es unknown
-
2007
- 2007-10-23 NO NO20075392A patent/NO20075392L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| BRPI0609475A2 (pt) | 2011-10-11 |
| MX2007011733A (es) | 2007-12-05 |
| EA200702060A1 (ru) | 2008-02-28 |
| EA012213B1 (ru) | 2009-08-28 |
| AU2006226462A1 (en) | 2006-09-28 |
| WO2006100114A1 (en) | 2006-09-28 |
| ATE512117T1 (de) | 2011-06-15 |
| JP2008534415A (ja) | 2008-08-28 |
| KR20070112407A (ko) | 2007-11-23 |
| EP1866248B1 (en) | 2011-06-08 |
| US20080181836A1 (en) | 2008-07-31 |
| CA2601333A1 (en) | 2006-09-28 |
| US7943109B2 (en) | 2011-05-17 |
| NO20075392L (no) | 2007-10-23 |
| EP1866248A1 (en) | 2007-12-19 |
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