ATE510333T1 - Vorrichtung und verfahren zum verbessern der elektrischen leitungsstruktur eines vertikalresonator-oberflächenemissionslasers - Google Patents

Vorrichtung und verfahren zum verbessern der elektrischen leitungsstruktur eines vertikalresonator-oberflächenemissionslasers

Info

Publication number
ATE510333T1
ATE510333T1 AT03714484T AT03714484T ATE510333T1 AT E510333 T1 ATE510333 T1 AT E510333T1 AT 03714484 T AT03714484 T AT 03714484T AT 03714484 T AT03714484 T AT 03714484T AT E510333 T1 ATE510333 T1 AT E510333T1
Authority
AT
Austria
Prior art keywords
diameter
electrical contact
improving
barrel
electrical conduction
Prior art date
Application number
AT03714484T
Other languages
English (en)
Inventor
Xiaobo Zhang
Original Assignee
Lumei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumei Optoelectronics Corp filed Critical Lumei Optoelectronics Corp
Application granted granted Critical
Publication of ATE510333T1 publication Critical patent/ATE510333T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT03714484T 2002-04-01 2003-04-01 Vorrichtung und verfahren zum verbessern der elektrischen leitungsstruktur eines vertikalresonator-oberflächenemissionslasers ATE510333T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/113,487 US6717974B2 (en) 2002-04-01 2002-04-01 Apparatus and method for improving electrical conduction structure of a vertical cavity surface emitting laser
PCT/US2003/009915 WO2003085788A2 (en) 2002-04-01 2003-04-01 Apparatus and method for improving electrical conduction structure of a vertical cavity surface emitting laser

Publications (1)

Publication Number Publication Date
ATE510333T1 true ATE510333T1 (de) 2011-06-15

Family

ID=28453609

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03714484T ATE510333T1 (de) 2002-04-01 2003-04-01 Vorrichtung und verfahren zum verbessern der elektrischen leitungsstruktur eines vertikalresonator-oberflächenemissionslasers

Country Status (8)

Country Link
US (1) US6717974B2 (de)
EP (1) EP1490931B1 (de)
KR (1) KR100989382B1 (de)
CN (1) CN1332487C (de)
AT (1) ATE510333T1 (de)
AU (1) AU2003218480A1 (de)
HK (1) HK1081729A1 (de)
WO (1) WO2003085788A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4590820B2 (ja) * 2002-12-16 2010-12-01 富士ゼロックス株式会社 面発光型半導体レーザおよびその製造方法
US7072376B2 (en) * 2004-09-16 2006-07-04 Corning Incorporated Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom
KR101015500B1 (ko) * 2004-10-11 2011-02-24 삼성전자주식회사 터널 접합을 구비한 고출력 레이저 소자 및 상기 레이저소자용 레이저 펌핑부
KR100810230B1 (ko) 2005-12-29 2008-03-07 삼성전자주식회사 수직 표면 방출 레이저 광원의 제작 방법과 그를 이용한수직 표면 방출 레이저
US7933303B2 (en) 2009-06-17 2011-04-26 Sumitomo Electric Industries, Ltd. Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
JP5206699B2 (ja) 2010-01-18 2013-06-12 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
US9014225B2 (en) * 2013-09-18 2015-04-21 Sae Magnetics (H.K.) Ltd. Vertical cavity surface emitting laser device
WO2018191489A1 (en) 2017-04-12 2018-10-18 Sense Photonics, Inc. Ultra-small vertical cavity surface emitting laser (vcsel) and arrays incorporating the same
TWI645637B (zh) * 2017-10-18 2018-12-21 華立捷科技股份有限公司 面射型雷射裝置及其製造方法
WO2020017206A1 (ja) * 2018-07-20 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 面発光レーザおよびその製造方法
US10847949B2 (en) * 2018-08-29 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Techniques for vertical cavity surface emitting laser oxidation
DE102019116862B4 (de) 2018-08-29 2021-09-30 Taiwan Semiconductor Manufacturing Co. Ltd. Techniken zur oxidation von oberflächenemittierenden lasern mit vertikalem hohlraum
CN112117638B (zh) * 2019-06-21 2023-05-16 光环科技股份有限公司 垂直共振腔面发射激光结构
CN112332216B (zh) * 2020-11-27 2021-09-21 北京金太光芯科技有限公司 预离子布植的垂直腔面发射激光器的制作方法
KR20220078282A (ko) 2020-12-03 2022-06-10 삼성전자주식회사 광학 소자 및 그 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266794A (en) * 1992-01-21 1993-11-30 Bandgap Technology Corporation Vertical-cavity surface emitting laser optical interconnect technology
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
JP3361641B2 (ja) * 1995-01-30 2003-01-07 株式会社日立製作所 面発光型半導体レーザ及びその製造方法
KR0160684B1 (ko) * 1995-03-23 1999-02-01 김광호 표면광 레이저
JPH0927611A (ja) * 1995-07-11 1997-01-28 Seiko Epson Corp 光検出部を備えた面発光型半導体レーザ及びその製造方法並びにそれを用いたセンサ
US5764674A (en) * 1996-06-28 1998-06-09 Honeywell Inc. Current confinement for a vertical cavity surface emitting laser
US6055262A (en) * 1997-06-11 2000-04-25 Honeywell Inc. Resonant reflector for improved optoelectronic device performance and enhanced applicability
US6256333B1 (en) * 1997-12-12 2001-07-03 Honeywell Inc. VCSEL structure insensitive to mobile hydrogen
US6144682A (en) 1998-10-29 2000-11-07 Xerox Corporation Spatial absorptive and phase shift filter layer to reduce modal reflectivity for higher order modes in a vertical cavity surface emitting laser
JP2001223384A (ja) * 2000-02-08 2001-08-17 Toshiba Corp 半導体発光素子
CN1124653C (zh) * 2000-06-29 2003-10-15 中国科学院半导体研究所 一种激光器与光电开关集成的器件

Also Published As

Publication number Publication date
EP1490931B1 (de) 2011-05-18
EP1490931A2 (de) 2004-12-29
WO2003085788A2 (en) 2003-10-16
AU2003218480A1 (en) 2003-10-20
HK1081729A1 (en) 2006-05-19
US20030185268A1 (en) 2003-10-02
WO2003085788A3 (en) 2003-12-04
AU2003218480A8 (en) 2003-10-20
CN1332487C (zh) 2007-08-15
EP1490931A4 (de) 2007-01-03
US6717974B2 (en) 2004-04-06
KR20050018808A (ko) 2005-02-28
KR100989382B1 (ko) 2010-10-25
CN1650489A (zh) 2005-08-03

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