ATE509299T1 - Verfahren zur bildung einer struktur auf einem substrat mittels ionischer organischer fotosäuregeneratoren für duv, muv und optische lithografie auf der basis von peraceptor- substituierten aromatischen anionen - Google Patents
Verfahren zur bildung einer struktur auf einem substrat mittels ionischer organischer fotosäuregeneratoren für duv, muv und optische lithografie auf der basis von peraceptor- substituierten aromatischen anionenInfo
- Publication number
- ATE509299T1 ATE509299T1 AT08870322T AT08870322T ATE509299T1 AT E509299 T1 ATE509299 T1 AT E509299T1 AT 08870322 T AT08870322 T AT 08870322T AT 08870322 T AT08870322 T AT 08870322T AT E509299 T1 ATE509299 T1 AT E509299T1
- Authority
- AT
- Austria
- Prior art keywords
- cation
- onium cation
- substrate
- substituted aromatic
- photolithographic
- Prior art date
Links
- 150000001450 anions Chemical class 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 239000002253 acid Substances 0.000 title 1
- 238000000206 photolithography Methods 0.000 title 1
- 150000001768 cations Chemical class 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 150000004012 chalcogen onium cations Chemical class 0.000 abstract 2
- 238000009472 formulation Methods 0.000 abstract 2
- 230000003993 interaction Effects 0.000 abstract 2
- 230000005855 radiation Effects 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- -1 aromatic anion Chemical class 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 125000006575 electron-withdrawing group Chemical group 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-O oxonium Chemical compound [OH3+] XLYOFNOQVPJJNP-UHFFFAOYSA-O 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/970,731 US7655379B2 (en) | 2008-01-08 | 2008-01-08 | Ionic, organic photoacid generators for DUV, MUV and optical lithography based on peraceptor-substituted aromatic anions |
| PCT/EP2008/067717 WO2009087027A2 (en) | 2008-01-08 | 2008-12-17 | Ionic, organic photoacid generators for duv, muv and optical lithography based on peraceptor-substituted aromatic anions |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE509299T1 true ATE509299T1 (de) | 2011-05-15 |
Family
ID=40626756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08870322T ATE509299T1 (de) | 2008-01-08 | 2008-12-17 | Verfahren zur bildung einer struktur auf einem substrat mittels ionischer organischer fotosäuregeneratoren für duv, muv und optische lithografie auf der basis von peraceptor- substituierten aromatischen anionen |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7655379B2 (de) |
| EP (1) | EP2240829B1 (de) |
| JP (1) | JP5308454B2 (de) |
| KR (1) | KR101320273B1 (de) |
| CN (1) | CN101910944B (de) |
| AT (1) | ATE509299T1 (de) |
| TW (1) | TWI434136B (de) |
| WO (1) | WO2009087027A2 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8039194B2 (en) * | 2008-01-08 | 2011-10-18 | Internatinal Business Machines Corporation | Photoacid generators for extreme ultraviolet lithography |
| US8034533B2 (en) * | 2008-01-16 | 2011-10-11 | International Business Machines Corporation | Fluorine-free heteroaromatic photoacid generators and photoresist compositions containing the same |
| US8343706B2 (en) | 2010-01-25 | 2013-01-01 | International Business Machines Corporation | Fluorine-free fused ring heteroaromatic photoacid generators and resist compositions containing the same |
| US10014261B2 (en) * | 2012-10-15 | 2018-07-03 | Palo Alto Research Center Incorporated | Microchip charge patterning |
| KR101988931B1 (ko) * | 2012-12-31 | 2019-09-30 | 동우 화인켐 주식회사 | 감광성 수지 조성물 및 이로부터 제조되는 절연막 |
| TWI662364B (zh) * | 2015-12-31 | 2019-06-11 | Rohm And Haas Electronic Materials Llc | 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法 |
| TWI656111B (zh) | 2015-12-31 | 2019-04-11 | Rohm And Haas Electronic Materials Llc | 光酸產生劑 |
| JPWO2018117167A1 (ja) | 2016-12-21 | 2019-10-31 | 東洋合成工業株式会社 | 感光性化合物、該感光性化合物を含有する光酸発生剤及びレジスト組成物、並びに、該レジスト組成物を用いたデバイスの製造方法 |
| US11127592B2 (en) * | 2018-05-31 | 2021-09-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive groups in resist layer |
| US11852972B2 (en) * | 2020-10-30 | 2023-12-26 | Rohm And Haas Electronic Materials Llc | Photoresist compositions and pattern formation methods |
| CN114721221A (zh) * | 2022-01-24 | 2022-07-08 | 南通林格橡塑制品有限公司 | 一种193nm分子玻璃光刻胶及其制备方法 |
| WO2024175523A1 (en) | 2023-02-21 | 2024-08-29 | Merck Patent Gmbh | Acceptor-substituted euv pags with high electron affinity |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3853943A (en) | 1967-10-27 | 1974-12-10 | Du Pont | Cyclopentadienes in which at least four of the ring carbons carry cyano substituents and methods for their preparation |
| US6093753A (en) | 1995-08-22 | 2000-07-25 | Nippon Soda Co., Ltd. | Sulfonium salt compounds, polymerization initiator, curable composition and curing method |
| TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
| DE60234409D1 (de) | 2001-06-29 | 2009-12-31 | Jsr Corp | Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche Zusammensetzung |
| US7217492B2 (en) | 2002-12-25 | 2007-05-15 | Jsr Corporation | Onium salt compound and radiation-sensitive resin composition |
| US7192686B2 (en) | 2004-03-31 | 2007-03-20 | Intel Corporation | Photoacid generators based on novel superacids |
-
2008
- 2008-01-08 US US11/970,731 patent/US7655379B2/en not_active Expired - Fee Related
- 2008-12-17 JP JP2010541045A patent/JP5308454B2/ja not_active Expired - Fee Related
- 2008-12-17 WO PCT/EP2008/067717 patent/WO2009087027A2/en not_active Ceased
- 2008-12-17 KR KR1020107014376A patent/KR101320273B1/ko not_active Expired - Fee Related
- 2008-12-17 EP EP08870322A patent/EP2240829B1/de not_active Not-in-force
- 2008-12-17 CN CN2008801243662A patent/CN101910944B/zh not_active Expired - Fee Related
- 2008-12-17 AT AT08870322T patent/ATE509299T1/de not_active IP Right Cessation
-
2009
- 2009-01-05 TW TW098100126A patent/TWI434136B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7655379B2 (en) | 2010-02-02 |
| WO2009087027A2 (en) | 2009-07-16 |
| EP2240829B1 (de) | 2011-05-11 |
| KR20100099223A (ko) | 2010-09-10 |
| US20090176173A1 (en) | 2009-07-09 |
| WO2009087027A3 (en) | 2009-11-05 |
| JP5308454B2 (ja) | 2013-10-09 |
| JP2011510109A (ja) | 2011-03-31 |
| CN101910944B (zh) | 2013-08-07 |
| EP2240829A2 (de) | 2010-10-20 |
| CN101910944A (zh) | 2010-12-08 |
| TW200949434A (en) | 2009-12-01 |
| KR101320273B1 (ko) | 2013-10-30 |
| TWI434136B (zh) | 2014-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |