ATE505817T1 - Lichtemittierende halbleitervorrichtung - Google Patents
Lichtemittierende halbleitervorrichtungInfo
- Publication number
- ATE505817T1 ATE505817T1 AT01130937T AT01130937T ATE505817T1 AT E505817 T1 ATE505817 T1 AT E505817T1 AT 01130937 T AT01130937 T AT 01130937T AT 01130937 T AT01130937 T AT 01130937T AT E505817 T1 ATE505817 T1 AT E505817T1
- Authority
- AT
- Austria
- Prior art keywords
- light emitting
- semiconductor device
- emitting semiconductor
- metal elements
- nitride material
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 150000002910 rare earth metals Chemical class 0.000 abstract 1
- 229910052723 transition metal Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000401418 | 2000-12-28 | ||
| JP2001343055A JP3888668B2 (ja) | 2000-12-28 | 2001-11-08 | 半導体発光素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE505817T1 true ATE505817T1 (de) | 2011-04-15 |
Family
ID=26607103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT01130937T ATE505817T1 (de) | 2000-12-28 | 2001-12-27 | Lichtemittierende halbleitervorrichtung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6677708B2 (de) |
| EP (1) | EP1220334B1 (de) |
| JP (1) | JP3888668B2 (de) |
| AT (1) | ATE505817T1 (de) |
| DE (1) | DE60144419D1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4327339B2 (ja) * | 2000-07-28 | 2009-09-09 | 独立行政法人物質・材料研究機構 | 半導体層形成用基板とそれを利用した半導体装置 |
| JP4963763B2 (ja) * | 2000-12-21 | 2012-06-27 | 日本碍子株式会社 | 半導体素子 |
| JP2005136200A (ja) * | 2003-10-30 | 2005-05-26 | Univ Nagoya | 窒化物半導体結晶層の作製方法、窒化物半導体結晶層、及び窒化物半導体結晶層作製用の基材 |
| JP2005183947A (ja) * | 2003-11-26 | 2005-07-07 | Ricoh Co Ltd | Ｉｉｉ族窒化物の結晶成長方法およびｉｉｉ族窒化物結晶およびｉｉｉ族窒化物半導体デバイスおよび発光デバイス |
| JP2011082528A (ja) * | 2003-11-26 | 2011-04-21 | Ricoh Co Ltd | 半導体発光素子 |
| JP2006206343A (ja) * | 2005-01-25 | 2006-08-10 | Ngk Insulators Ltd | ＡｌＮ単結晶の表面平坦化方法およびＡｌＮ単結晶基板の作製方法 |
| KR100770440B1 (ko) * | 2006-08-29 | 2007-10-26 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
| JP2009123718A (ja) * | 2007-01-16 | 2009-06-04 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ |
| TWI377703B (en) * | 2007-05-02 | 2012-11-21 | Showa Denko Kk | Production method of group iii nitride semiconductor light-emitting device |
| WO2008144337A1 (en) * | 2007-05-16 | 2008-11-27 | Osram Sylvania Inc. | Light emitting diode based on multiple double-heterostructures (quantum wells) with rare earth doped active regions |
| JPWO2008153130A1 (ja) * | 2007-06-15 | 2010-08-26 | ローム株式会社 | 窒化物半導体発光素子及び窒化物半導体の製造方法 |
| JP2011049271A (ja) * | 2009-08-26 | 2011-03-10 | Sanken Electric Co Ltd | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2649936B2 (ja) * | 1988-03-01 | 1997-09-03 | 富士通株式会社 | 歪超格子バッファ |
| JPH0964477A (ja) * | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体発光素子及びその製造方法 |
| JP3209096B2 (ja) | 1996-05-21 | 2001-09-17 | 豊田合成株式会社 | ３族窒化物化合物半導体発光素子 |
| JP4292600B2 (ja) | 1998-09-11 | 2009-07-08 | ソニー株式会社 | ＧａＮ系半導体発光素子およびその製造方法 |
| US6255669B1 (en) | 1999-04-23 | 2001-07-03 | The University Of Cincinnati | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
-
2001
- 2001-11-08 JP JP2001343055A patent/JP3888668B2/ja not_active Expired - Lifetime
- 2001-12-17 US US10/024,664 patent/US6677708B2/en not_active Expired - Lifetime
- 2001-12-27 DE DE60144419T patent/DE60144419D1/de not_active Expired - Lifetime
- 2001-12-27 AT AT01130937T patent/ATE505817T1/de not_active IP Right Cessation
- 2001-12-27 EP EP01130937A patent/EP1220334B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20020117961A1 (en) | 2002-08-29 |
| DE60144419D1 (de) | 2011-05-26 |
| JP2002261324A (ja) | 2002-09-13 |
| JP3888668B2 (ja) | 2007-03-07 |
| US6677708B2 (en) | 2004-01-13 |
| EP1220334A3 (de) | 2006-08-02 |
| EP1220334B1 (de) | 2011-04-13 |
| EP1220334A2 (de) | 2002-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ATE505817T1 (de) | Lichtemittierende halbleitervorrichtung | |
| ATE487239T1 (de) | Lichtemittierende vorrichtung und verfahren zu ihrer herstellung | |
| DE60142046D1 (de) | Betriebsverfahren für lichtemittierende Vorrichtungen | |
| EP0496030A3 (de) | Lichtemittierende Halbleitervorrichtung | |
| EP1335434A4 (de) | Nitridhalbleiter-lichtemissionselement und optische einrichtung damit | |
| GB2352329B (en) | Unipolar light emitting devices based on III- Nitride semiconductor superlattices | |
| DE60324413D1 (de) | Verfahren zur herstellung von vertikalstruktur-leds | |
| ATE195831T1 (de) | Licht-emittierende vorrichtung und anzeigevorrichtung | |
| EP2182548A3 (de) | Gruppe III-V Halbleitervorrichtung auf SiC Substrat | |
| GB0130203D0 (en) | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same | |
| DE69126152D1 (de) | Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung | |
| TW567620B (en) | Ultraviolet ray emitting element | |
| CA2255964A1 (en) | Lighting device for signalling, identification or marking | |
| DE69834415D1 (de) | Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung | |
| DE19921987B4 (de) | Licht-Abstrahlende Halbleitervorrichtung mit Gruppe-III-Element-Nitrid-Verbindungen | |
| HK1015549A1 (en) | Double heterojunction light emitting diode with gallium nitride active layer. | |
| PL375580A1 (en) | Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same | |
| DE69510129T2 (de) | Oberflächenemittierende lumineszente Halbleitervorrichtung | |
| EP1211736A3 (de) | Lichtemittierende Halbleitervorrichtung | |
| EP1335435A3 (de) | Licht emittierende Halbleitervorrichtung | |
| EP1154498A3 (de) | Verfahren zur Herstellung einer lichtemittierenden Vorrichtung | |
| MY143405A (en) | N-type nitride semiconductor laminate and semiconductor device using same | |
| ES2109231T3 (es) | Elementos laser de semi-conductores y metodo de fabricacion. | |
| GB2361480B (en) | Method for forming p-type semiconductor film and light emitting device using the same | |
| EP1220335A3 (de) | Oberflächenemittierende Vorrichtung mit AlGaInP und AlGaAs reflektierendem Mehrschichtfilm |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |