ATE504076T1 - Verfahren zur steuerung der ionenenergie in radiofrequenzplasmen - Google Patents
Verfahren zur steuerung der ionenenergie in radiofrequenzplasmenInfo
- Publication number
- ATE504076T1 ATE504076T1 AT08786101T AT08786101T ATE504076T1 AT E504076 T1 ATE504076 T1 AT E504076T1 AT 08786101 T AT08786101 T AT 08786101T AT 08786101 T AT08786101 T AT 08786101T AT E504076 T1 ATE504076 T1 AT E504076T1
- Authority
- AT
- Austria
- Prior art keywords
- plasms
- radio frequency
- ion energy
- controlling ion
- components
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3826308P | 2008-03-20 | 2008-03-20 | |
PCT/EP2008/059133 WO2009115135A1 (en) | 2008-03-20 | 2008-07-11 | Method for controlling ion energy in radio frequency plasmas |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE504076T1 true ATE504076T1 (de) | 2011-04-15 |
Family
ID=39831709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT08786101T ATE504076T1 (de) | 2008-03-20 | 2008-07-11 | Verfahren zur steuerung der ionenenergie in radiofrequenzplasmen |
Country Status (7)
Country | Link |
---|---|
US (2) | US8643280B2 (de) |
EP (2) | EP2249372B1 (de) |
CN (1) | CN101978461B (de) |
AT (1) | ATE504076T1 (de) |
DE (1) | DE602008005858D1 (de) |
TW (1) | TW200952560A (de) |
WO (1) | WO2009115135A1 (de) |
Families Citing this family (68)
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WO2009115135A1 (en) | 2008-03-20 | 2009-09-24 | RUHR-UNIVERSITäT BOCHUM | Method for controlling ion energy in radio frequency plasmas |
DE102009020436A1 (de) | 2008-11-04 | 2010-09-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats |
US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
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US20130122711A1 (en) * | 2011-11-10 | 2013-05-16 | Alexei Marakhtanov | System, method and apparatus for plasma sheath voltage control |
US9105447B2 (en) * | 2012-08-28 | 2015-08-11 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
JP6207880B2 (ja) * | 2012-09-26 | 2017-10-04 | 東芝メモリ株式会社 | プラズマ処理装置およびプラズマ処理方法 |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
US9336995B2 (en) * | 2013-04-26 | 2016-05-10 | Mks Instruments, Inc. | Multiple radio frequency power supply control of frequency and phase |
DE102014105445A1 (de) * | 2013-04-26 | 2014-10-30 | Mks Instruments Inc. | Frequenz- und Phasensteuerung einer Multi-Radiofrequenz-Leistungsversorgung |
US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
US20150107618A1 (en) * | 2013-10-21 | 2015-04-23 | Applied Materials, Inc. | Oxygen containing plasma cleaning to remove contamination from electronic device components |
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FR3020718B1 (fr) | 2014-05-02 | 2016-06-03 | Ecole Polytech | Procede et systeme pour controler des flux d'ions dans un plasma rf. |
US9026407B1 (en) | 2014-10-16 | 2015-05-05 | Christine Marie Kennefick | Method of making and using a material model of elements with planar faces |
US9595424B2 (en) * | 2015-03-02 | 2017-03-14 | Lam Research Corporation | Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes |
KR20170024922A (ko) * | 2015-08-26 | 2017-03-08 | 삼성전자주식회사 | 플라즈마 발생 장치 |
US10395895B2 (en) * | 2015-08-27 | 2019-08-27 | Mks Instruments, Inc. | Feedback control by RF waveform tailoring for ion energy distribution |
US10008366B2 (en) | 2015-09-08 | 2018-06-26 | Applied Materials, Inc. | Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing |
US9644271B1 (en) * | 2016-05-13 | 2017-05-09 | Lam Research Corporation | Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication |
US9852889B1 (en) | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
US10026592B2 (en) * | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
JP6643212B2 (ja) * | 2016-09-16 | 2020-02-12 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理方法 |
EP3309815B1 (de) * | 2016-10-12 | 2019-03-20 | Meyer Burger (Germany) AG | Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung |
US9812295B1 (en) | 2016-11-15 | 2017-11-07 | Lyten, Inc. | Microwave chemical processing |
US9997334B1 (en) | 2017-02-09 | 2018-06-12 | Lyten, Inc. | Seedless particles with carbon allotropes |
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JP7018288B2 (ja) * | 2017-10-10 | 2022-02-10 | 東京エレクトロン株式会社 | 成膜方法 |
US10777386B2 (en) * | 2017-10-17 | 2020-09-15 | Lam Research Corporation | Methods for controlling plasma glow discharge in a plasma chamber |
TWI767088B (zh) | 2017-11-17 | 2022-06-11 | 新加坡商Aes全球公司 | 電漿處理系統,用於調變其中的電源的控制方法及相關的電漿處理控制系統 |
WO2019099925A1 (en) * | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Spatial and temporal control of ion bias voltage for plasma processing |
KR20200100641A (ko) | 2017-11-17 | 2020-08-26 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 플라즈마 프로세싱 소스 및 기판 바이어스의 동기화된 펄싱 |
US10756334B2 (en) | 2017-12-22 | 2020-08-25 | Lyten, Inc. | Structured composite materials |
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US10644368B2 (en) | 2018-01-16 | 2020-05-05 | Lyten, Inc. | Pressure barrier comprising a transparent microwave window providing a pressure difference on opposite sides of the window |
US10304669B1 (en) * | 2018-01-21 | 2019-05-28 | Mks Instruments, Inc. | Adaptive counter measure control thwarting IMD jamming impairments for RF plasma systems |
TWI758589B (zh) * | 2018-03-01 | 2022-03-21 | 美商應用材料股份有限公司 | 電漿源組件和提供電漿的方法 |
JP6977170B2 (ja) * | 2018-04-04 | 2021-12-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | バイアス工程でのrf調整電圧 |
US20190311884A1 (en) * | 2018-04-04 | 2019-10-10 | Applied Materials, Inc. | Rf tailored voltage on bias operation |
US10998170B2 (en) | 2018-04-13 | 2021-05-04 | Tokyo Electron Limited | Method for ion mass separation and ion energy control in process plasmas |
WO2019199635A1 (en) * | 2018-04-13 | 2019-10-17 | Tokyo Electron Limited | Apparatus and method for controlling ion energy distribution in process plasmas |
US20190318913A1 (en) * | 2018-04-13 | 2019-10-17 | Tokyo Electron Limited | Apparatus and Method for Controlling Ion Energy Distribution in Process Plasmas |
US10916409B2 (en) * | 2018-06-18 | 2021-02-09 | Lam Research Corporation | Active control of radial etch uniformity |
CN111092008A (zh) * | 2018-10-24 | 2020-05-01 | 江苏鲁汶仪器有限公司 | 一种感应耦合等离子体刻蚀设备及刻蚀方法 |
JP2022541004A (ja) | 2019-07-12 | 2022-09-21 | エーイーエス グローバル ホールディングス, プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
CN110310878B (zh) | 2019-08-28 | 2019-11-12 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器及其处理方法 |
JP7262375B2 (ja) * | 2019-11-26 | 2023-04-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
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US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
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Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325019A (en) * | 1992-08-21 | 1994-06-28 | Sematech, Inc. | Control of plasma process by use of harmonic frequency components of voltage and current |
JP2001516963A (ja) * | 1997-09-17 | 2001-10-02 | 東京エレクトロン株式会社 | ガスプラズマ処理を監視しかつ管理するためのシステムおよび方法 |
DE60023964T2 (de) * | 1999-02-01 | 2006-06-22 | Ohmi, Tadahiro, Sendai | Laservorrichtung, Belichtungsapparat unter Verwendung derselben und Herstellungsverfahren |
US20030079983A1 (en) * | 2000-02-25 | 2003-05-01 | Maolin Long | Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources |
WO2002054835A2 (en) * | 2001-01-08 | 2002-07-11 | Tokyo Electron Limited | Addition of power at selected harmonics of plasma processor drive frequency |
JP4877884B2 (ja) * | 2001-01-25 | 2012-02-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6841943B2 (en) * | 2002-06-27 | 2005-01-11 | Lam Research Corp. | Plasma processor with electrode simultaneously responsive to plural frequencies |
JP4773079B2 (ja) | 2004-11-26 | 2011-09-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置の制御方法 |
JP4804824B2 (ja) * | 2005-07-27 | 2011-11-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
KR100777151B1 (ko) * | 2006-03-21 | 2007-11-16 | 주식회사 디엠에스 | 하이브리드형 플라즈마 반응장치 |
US7645357B2 (en) * | 2006-04-24 | 2010-01-12 | Applied Materials, Inc. | Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency |
WO2009115135A1 (en) | 2008-03-20 | 2009-09-24 | RUHR-UNIVERSITäT BOCHUM | Method for controlling ion energy in radio frequency plasmas |
-
2008
- 2008-07-11 WO PCT/EP2008/059133 patent/WO2009115135A1/en active Application Filing
- 2008-07-11 EP EP10170734A patent/EP2249372B1/de not_active Not-in-force
- 2008-07-11 EP EP08786101A patent/EP2122657B8/de active Active
- 2008-07-11 CN CN200880128271.8A patent/CN101978461B/zh not_active Expired - Fee Related
- 2008-07-11 AT AT08786101T patent/ATE504076T1/de active
- 2008-07-11 DE DE602008005858T patent/DE602008005858D1/de active Active
- 2008-07-11 US US12/864,123 patent/US8643280B2/en not_active Expired - Fee Related
-
2009
- 2009-02-20 TW TW098105368A patent/TW200952560A/zh unknown
-
2013
- 2013-11-08 US US14/075,026 patent/US8933629B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8933629B2 (en) | 2015-01-13 |
DE602008005858D1 (de) | 2011-05-12 |
WO2009115135A1 (en) | 2009-09-24 |
EP2122657B8 (de) | 2011-06-22 |
US20140103808A1 (en) | 2014-04-17 |
EP2249372A1 (de) | 2010-11-10 |
TW200952560A (en) | 2009-12-16 |
CN101978461A (zh) | 2011-02-16 |
EP2122657A1 (de) | 2009-11-25 |
EP2122657B1 (de) | 2011-03-30 |
EP2249372B1 (de) | 2013-01-02 |
CN101978461B (zh) | 2013-09-11 |
US20110248634A1 (en) | 2011-10-13 |
US8643280B2 (en) | 2014-02-04 |
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