ATE504076T1 - Verfahren zur steuerung der ionenenergie in radiofrequenzplasmen - Google Patents

Verfahren zur steuerung der ionenenergie in radiofrequenzplasmen

Info

Publication number
ATE504076T1
ATE504076T1 AT08786101T AT08786101T ATE504076T1 AT E504076 T1 ATE504076 T1 AT E504076T1 AT 08786101 T AT08786101 T AT 08786101T AT 08786101 T AT08786101 T AT 08786101T AT E504076 T1 ATE504076 T1 AT E504076T1
Authority
AT
Austria
Prior art keywords
plasms
radio frequency
ion energy
controlling ion
components
Prior art date
Application number
AT08786101T
Other languages
English (en)
Inventor
Brian Heil
Uwe Czarnetzki
Ralf Brinkmann
Thomas Mussenbrock
Original Assignee
Univ Ruhr Bochum
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Ruhr Bochum filed Critical Univ Ruhr Bochum
Application granted granted Critical
Publication of ATE504076T1 publication Critical patent/ATE504076T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
AT08786101T 2008-03-20 2008-07-11 Verfahren zur steuerung der ionenenergie in radiofrequenzplasmen ATE504076T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3826308P 2008-03-20 2008-03-20
PCT/EP2008/059133 WO2009115135A1 (en) 2008-03-20 2008-07-11 Method for controlling ion energy in radio frequency plasmas

Publications (1)

Publication Number Publication Date
ATE504076T1 true ATE504076T1 (de) 2011-04-15

Family

ID=39831709

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08786101T ATE504076T1 (de) 2008-03-20 2008-07-11 Verfahren zur steuerung der ionenenergie in radiofrequenzplasmen

Country Status (7)

Country Link
US (2) US8643280B2 (de)
EP (2) EP2249372B1 (de)
CN (1) CN101978461B (de)
AT (1) ATE504076T1 (de)
DE (1) DE602008005858D1 (de)
TW (1) TW200952560A (de)
WO (1) WO2009115135A1 (de)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602008005858D1 (de) 2008-03-20 2011-05-12 Univ Ruhr Bochum Verfahren zur Steuerung der Ionenenergie in Radiofrequenzplasmen
DE102009020436A1 (de) 2008-11-04 2010-09-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Plasmabehandlung eines flachen Substrats
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US10707055B2 (en) * 2017-11-17 2020-07-07 Advanced Energy Industries, Inc. Spatial and temporal control of ion bias voltage for plasma processing
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
EP2407998B1 (de) 2010-07-15 2019-02-13 Ecole Polytechnique Plasmaverarbeitung in einem kapazitativ gekopplten Reaktor mit trapezförmiger Wellenformerregung
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US9184028B2 (en) 2010-08-04 2015-11-10 Lam Research Corporation Dual plasma volume processing apparatus for neutral/ion flux control
US9117767B2 (en) * 2011-07-21 2015-08-25 Lam Research Corporation Negative ion control for dielectric etch
CN102686004B (zh) * 2011-03-17 2015-05-13 中微半导体设备(上海)有限公司 用于等离子体发生器的可控制谐波的射频系统
WO2012156062A1 (de) * 2011-05-13 2012-11-22 Leybold Optics Gmbh Verfahren zur plasmabehandlung eines substrats in einer plasmavorrichtung
US20130122711A1 (en) * 2011-11-10 2013-05-16 Alexei Marakhtanov System, method and apparatus for plasma sheath voltage control
KR101909571B1 (ko) * 2012-08-28 2018-10-19 어드밴스드 에너지 인더스트리즈 인코포레이티드 넓은 다이내믹 레인지 이온 에너지 바이어스 제어； 고속 이온 에너지 스위칭； 이온 에너지 제어와 펄스동작 바이어스 서플라이； 및 가상 전면 패널
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
US9245761B2 (en) 2013-04-05 2016-01-26 Lam Research Corporation Internal plasma grid for semiconductor fabrication
DE102014105445A1 (de) * 2013-04-26 2014-10-30 Mks Instruments Inc. Frequenz- und Phasensteuerung einer Multi-Radiofrequenz-Leistungsversorgung
US9336995B2 (en) 2013-04-26 2016-05-10 Mks Instruments, Inc. Multiple radio frequency power supply control of frequency and phase
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
US20150107618A1 (en) * 2013-10-21 2015-04-23 Applied Materials, Inc. Oxygen containing plasma cleaning to remove contamination from electronic device components
CN109166782B (zh) 2013-11-06 2020-08-07 应用材料公司 通过dc偏压调制的颗粒产生抑制器
FR3020718B1 (fr) 2014-05-02 2016-06-03 Ecole Polytech Procede et systeme pour controler des flux d'ions dans un plasma rf.
US9026407B1 (en) 2014-10-16 2015-05-05 Christine Marie Kennefick Method of making and using a material model of elements with planar faces
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
KR20170024922A (ko) * 2015-08-26 2017-03-08 삼성전자주식회사 플라즈마 발생 장치
US10395895B2 (en) * 2015-08-27 2019-08-27 Mks Instruments, Inc. Feedback control by RF waveform tailoring for ion energy distribution
US10008366B2 (en) 2015-09-08 2018-06-26 Applied Materials, Inc. Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing
US9644271B1 (en) * 2016-05-13 2017-05-09 Lam Research Corporation Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication
US9852889B1 (en) 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring
US10026592B2 (en) * 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
JP6643212B2 (ja) * 2016-09-16 2020-02-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
EP3309815B1 (de) * 2016-10-12 2019-03-20 Meyer Burger (Germany) AG Plasmabehandlungsvorrichtung mit zwei, miteinander gekoppelten mikrowellenplasmaquellen sowie verfahren zum betreiben einer solchen plasmabehandlungsvorrichtung
US9812295B1 (en) 2016-11-15 2017-11-07 Lyten, Inc. Microwave chemical processing
US9767992B1 (en) 2017-02-09 2017-09-19 Lyten, Inc. Microwave chemical processing reactor
US9997334B1 (en) 2017-02-09 2018-06-12 Lyten, Inc. Seedless particles with carbon allotropes
CN110418816B (zh) 2017-03-16 2022-05-31 利腾股份有限公司 碳和弹性体整合
US10920035B2 (en) 2017-03-16 2021-02-16 Lyten, Inc. Tuning deformation hysteresis in tires using graphene
JP7018288B2 (ja) * 2017-10-10 2022-02-10 東京エレクトロン株式会社 成膜方法
US10777386B2 (en) * 2017-10-17 2020-09-15 Lam Research Corporation Methods for controlling plasma glow discharge in a plasma chamber
PL3711080T3 (pl) * 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
TWI767088B (zh) 2017-11-17 2022-06-11 新加坡商Ａｅｓ全球公司 電漿處理系統，用於調變其中的電源的控制方法及相關的電漿處理控制系統
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
WO2019126196A1 (en) 2017-12-22 2019-06-27 Lyten, Inc. Structured composite materials
CN112105922B (zh) 2018-01-04 2024-09-03 利腾股份有限公司 谐振气体传感器
US10644368B2 (en) 2018-01-16 2020-05-05 Lyten, Inc. Pressure barrier comprising a transparent microwave window providing a pressure difference on opposite sides of the window
US10304669B1 (en) * 2018-01-21 2019-05-28 Mks Instruments, Inc. Adaptive counter measure control thwarting IMD jamming impairments for RF plasma systems
US12224156B2 (en) 2018-03-01 2025-02-11 Applied Materials, Inc. Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool
TWI826925B (zh) 2018-03-01 2023-12-21 美商應用材料股份有限公司 電漿源組件和氣體分配組件
US20190311884A1 (en) * 2018-04-04 2019-10-10 Applied Materials, Inc. Rf tailored voltage on bias operation
JP6977170B2 (ja) * 2018-04-04 2021-12-08 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated バイアス工程でのｒｆ調整電圧
US20190318913A1 (en) * 2018-04-13 2019-10-17 Tokyo Electron Limited Apparatus and Method for Controlling Ion Energy Distribution in Process Plasmas
US10998170B2 (en) 2018-04-13 2021-05-04 Tokyo Electron Limited Method for ion mass separation and ion energy control in process plasmas
KR102820269B1 (ko) * 2018-04-13 2025-06-12 도쿄엘렉트론가부시키가이샤 공정 플라즈마의 이온 에너지 분포를 제어하기 위한 장치 및 방법
US10916409B2 (en) * 2018-06-18 2021-02-09 Lam Research Corporation Active control of radial etch uniformity
CN111092008A (zh) * 2018-10-24 2020-05-01 江苏鲁汶仪器有限公司 一种感应耦合等离子体刻蚀设备及刻蚀方法
US11476092B2 (en) * 2019-05-31 2022-10-18 Mks Instruments, Inc. System and method of power generation with phase linked solid-state generator modules
CN114222958B (zh) 2019-07-12 2024-03-19 先进工程解决方案全球控股私人有限公司 具有单个受控开关的偏置电源
CN110310878B (zh) 2019-08-28 2019-11-12 中微半导体设备(上海)股份有限公司 一种等离子体处理器及其处理方法
JP7262375B2 (ja) * 2019-11-26 2023-04-21 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN113035677B (zh) * 2019-12-09 2023-01-24 中微半导体设备(上海)股份有限公司 等离子体处理设备以及等离子体处理方法
SE544676C2 (en) * 2020-04-06 2022-10-11 Ionautics Ab Method for monitoring process conditions of, and method for controlling, a plasma pvd process
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
CN112259434A (zh) * 2020-11-04 2021-01-22 大连理工大学 一种任意波形驱动放电控制系统
CN118043935A (zh) * 2021-07-22 2024-05-14 朗姆研究公司 基于等离子体的处理的监测及控制
CN113652674A (zh) * 2021-09-07 2021-11-16 佛山市思博睿科技有限公司 一种基于磁约束等离子体超双疏膜层的制备装置及方法
US12106925B2 (en) * 2021-12-23 2024-10-01 Applied Materials, Inc. Cyclotron having continuously variable energy output
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
CN117546275A (zh) 2022-06-07 2024-02-09 株式会社日立高新技术 等离子处理装置
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325019A (en) * 1992-08-21 1994-06-28 Sematech, Inc. Control of plasma process by use of harmonic frequency components of voltage and current
EP1018088A4 (de) * 1997-09-17 2006-08-16 Tokyo Electron Ltd Vorrichtung und verfahren zur überwachung und regelung von gas plasma prozessen
DE60023964T2 (de) * 1999-02-01 2006-06-22 Ohmi, Tadahiro, Sendai Laservorrichtung, Belichtungsapparat unter Verwendung derselben und Herstellungsverfahren
US20030079983A1 (en) * 2000-02-25 2003-05-01 Maolin Long Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources
WO2002054835A2 (en) * 2001-01-08 2002-07-11 Tokyo Electron Limited Addition of power at selected harmonics of plasma processor drive frequency
JP4877884B2 (ja) * 2001-01-25 2012-02-15 東京エレクトロン株式会社 プラズマ処理装置
US6841943B2 (en) * 2002-06-27 2005-01-11 Lam Research Corp. Plasma processor with electrode simultaneously responsive to plural frequencies
JP4773079B2 (ja) 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
JP4804824B2 (ja) * 2005-07-27 2011-11-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
DE602008005858D1 (de) 2008-03-20 2011-05-12 Univ Ruhr Bochum Verfahren zur Steuerung der Ionenenergie in Radiofrequenzplasmen

Also Published As

Publication number Publication date
DE602008005858D1 (de) 2011-05-12
US20110248634A1 (en) 2011-10-13
US8643280B2 (en) 2014-02-04
EP2249372A1 (de) 2010-11-10
WO2009115135A1 (en) 2009-09-24
TW200952560A (en) 2009-12-16
CN101978461B (zh) 2013-09-11
US20140103808A1 (en) 2014-04-17
US8933629B2 (en) 2015-01-13
EP2249372B1 (de) 2013-01-02
CN101978461A (zh) 2011-02-16
EP2122657B1 (de) 2011-03-30
EP2122657B8 (de) 2011-06-22
EP2122657A1 (de) 2009-11-25

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