SG10201908638WA - Feedback control by rf waveform tailoring for ion energy distribution - Google Patents

Feedback control by rf waveform tailoring for ion energy distribution

Info

Publication number
SG10201908638WA
SG10201908638WA SG10201908638WA SG10201908638WA SG 10201908638W A SG10201908638W A SG 10201908638WA SG 10201908638W A SG10201908638W A SG 10201908638WA SG 10201908638W A SG10201908638W A SG 10201908638WA
Authority
SG
Singapore
Prior art keywords
power supply
load
slave
power
phase
Prior art date
Application number
Inventor
David J Coumou
Ross REINHARDT
Yuriy Elner
Daniel M Gill
Richard Pham
Original Assignee
Mks Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mks Instr Inc filed Critical Mks Instr Inc
Publication of SG10201908638WA publication Critical patent/SG10201908638WA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119Windows
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972Spectral analysis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Abstract

A system for controlling RF power supplies applying power to a load, such as a plasma chamber, includes a master power supply and a slave power supply. The master power supply provides a control signal, such as a frequency and phase signal, to the slave power supply. The slave power supply receives the 5 frequency and phase signal and also receives signals characteristic of the spectral emissions detected from the load. The slave RF power supply varies the phase and power of its RF output signal applied to the load. Varying the power controls the width of an ion distribution function, and varying the phase controls a peak of the ion distribution. Depending upon the coupling between the RF 10 generators and the load, different spectral emissions are detected, including first harmonics, second harmonics, and, in the case of a dual frequency drive system, intermodulation distortion. [Fig. 11] 15
SG10201908638W 2015-08-27 2016-05-12 Feedback control by rf waveform tailoring for ion energy distribution SG10201908638WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14/837,512 US10395895B2 (en) 2015-08-27 2015-08-27 Feedback control by RF waveform tailoring for ion energy distribution

Publications (1)

Publication Number Publication Date
SG10201908638WA true SG10201908638WA (en) 2019-10-30

Family

ID=58100787

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201908638W SG10201908638WA (en) 2015-08-27 2016-05-12 Feedback control by rf waveform tailoring for ion energy distribution

Country Status (8)

Country Link
US (2) US10395895B2 (en)
EP (1) EP3341955B1 (en)
JP (2) JP6692895B2 (en)
KR (1) KR102364174B1 (en)
CN (2) CN112908824B (en)
SG (1) SG10201908638WA (en)
TW (1) TWI656810B (en)
WO (1) WO2017034632A1 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6449674B2 (en) * 2015-02-23 2019-01-09 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
US10553411B2 (en) 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
JP6640608B2 (en) * 2016-03-02 2020-02-05 東京エレクトロン株式会社 Substrate processing equipment
US10026592B2 (en) * 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
US10312048B2 (en) 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10748797B2 (en) * 2017-01-18 2020-08-18 Applied Materials, Inc. Plasma parameters and skew characterization by high speed imaging
DE102018204585A1 (en) * 2017-03-31 2018-10-04 centrotherm international AG Plasma generator, plasma treatment apparatus and method for pulsed supply of electrical power
US10546724B2 (en) * 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
US10396601B2 (en) 2017-05-25 2019-08-27 Mks Instruments, Inc. Piecewise RF power systems and methods for supplying pre-distorted RF bias voltage signals to an electrode in a processing chamber
KR102347373B1 (en) * 2017-07-13 2022-01-04 어플라이드 머티어리얼스, 인코포레이티드 Substrate processing method and apparatus
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
DE102017129330B3 (en) * 2017-12-08 2019-01-10 Infineon Technologies Ag Generation of an RF test signal for testing an RF receiver circuit
US10304669B1 (en) * 2018-01-21 2019-05-28 Mks Instruments, Inc. Adaptive counter measure control thwarting IMD jamming impairments for RF plasma systems
WO2019188811A1 (en) 2018-03-26 2019-10-03 古河電気工業株式会社 Cable winding device, and flat cable routing structure for sliding seat
US10553400B2 (en) * 2018-03-30 2020-02-04 Applied Materials, Inc. Methods and apparatus for frequency generator and match network communication
US20190311884A1 (en) * 2018-04-04 2019-10-10 Applied Materials, Inc. Rf tailored voltage on bias operation
CN111937114A (en) * 2018-04-13 2020-11-13 东京毅力科创株式会社 Apparatus and method for controlling ion energy distribution while processing plasma
US10998170B2 (en) * 2018-04-13 2021-05-04 Tokyo Electron Limited Method for ion mass separation and ion energy control in process plasmas
US11042140B2 (en) 2018-06-26 2021-06-22 Mks Instruments, Inc. Adaptive control for a power generator
CN112955997B (en) 2018-11-21 2024-04-05 应用材料公司 Apparatus and method for adjusting plasma distribution using phase control
KR20200086808A (en) * 2019-01-10 2020-07-20 삼성전자주식회사 Method of controlling uniformity of plasma and plasma processing system
CN116844934A (en) * 2019-02-05 2023-10-03 东京毅力科创株式会社 Plasma processing apparatus
KR20210121166A (en) * 2019-02-06 2021-10-07 에바텍 아크티엔게젤샤프트 Ion generation method and apparatus
WO2020166009A1 (en) * 2019-02-14 2020-08-20 株式会社日立国際電気 High-frequency power source device
KR20200126177A (en) * 2019-04-29 2020-11-06 삼성전자주식회사 Apparatus for monitoring RF(Radio Frequency) power, and PE(Plasma Enhanced) system comprising the same apparatus
GB2584146A (en) * 2019-05-23 2020-11-25 Comet Ag Radio frequency generator
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
US11232931B2 (en) 2019-10-21 2022-01-25 Mks Instruments, Inc. Intermodulation distortion mitigation using electronic variable capacitor
US20210183622A1 (en) * 2019-12-17 2021-06-17 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
CN111211740B (en) * 2020-03-30 2021-01-15 河南精工工程管理咨询有限公司 Bridge construction monitored control system based on block chain
US20230125521A1 (en) * 2021-10-25 2023-04-27 Advanced Energy Industries, Inc. Robust tensorized shaped setpoint waveform streaming control
DE102022108634A1 (en) * 2022-04-08 2023-10-12 TRUMPF Hüttinger GmbH + Co. KG Plasma system and method for operating a plasma system

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302882A (en) * 1991-09-09 1994-04-12 Sematech, Inc. Low pass filter for plasma discharge
US5467013A (en) * 1993-12-07 1995-11-14 Sematech, Inc. Radio frequency monitor for semiconductor process control
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
US6064064A (en) * 1996-03-01 2000-05-16 Fire Sentry Corporation Fire detector
EP0840350A2 (en) * 1996-11-04 1998-05-06 Applied Materials, Inc. Plasma apparatus and process with filtering of plasma sheath-generated harmonics
CA2280794A1 (en) * 1997-02-20 1998-08-27 The Regents Of The University Of California Plasmon resonant particles, methods and apparatus
JP2001516963A (en) 1997-09-17 2001-10-02 東京エレクトロン株式会社 System and method for monitoring and managing gas plasma processing
US5971591A (en) * 1997-10-20 1999-10-26 Eni Technologies, Inc. Process detection system for plasma process
US6008928A (en) * 1997-12-08 1999-12-28 The United States As Represented By The Administrator Of The National Aeronautics And Space Administration Multi-gas sensor
US6020794A (en) 1998-02-09 2000-02-01 Eni Technologies, Inc. Ratiometric autotuning algorithm for RF plasma generator
US6449568B1 (en) * 1998-02-27 2002-09-10 Eni Technology, Inc. Voltage-current sensor with high matching directivity
AUPP573098A0 (en) * 1998-09-04 1998-10-01 Generation Technology Research Pty Ltd Apparatus and method for analyzing material
US6313584B1 (en) * 1998-09-17 2001-11-06 Tokyo Electron Limited Electrical impedance matching system and method
US6469919B1 (en) * 1999-07-22 2002-10-22 Eni Technology, Inc. Power supplies having protection circuits
US6441380B1 (en) * 1999-10-13 2002-08-27 Spectra Systems Corporation Coding and authentication by phase measurement modulation response and spectral emission
US6201208B1 (en) * 1999-11-04 2001-03-13 Wisconsin Alumni Research Foundation Method and apparatus for plasma processing with control of ion energy distribution at the substrates
US6441620B1 (en) * 2000-06-20 2002-08-27 John Scanlan Method for fault identification in a plasma process
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US7294563B2 (en) * 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US6627464B2 (en) * 2001-02-07 2003-09-30 Eni Technology, Inc. Adaptive plasma characterization system
US6741446B2 (en) * 2001-03-30 2004-05-25 Lam Research Corporation Vacuum plasma processor and method of operating same
US20030143554A1 (en) * 2001-03-31 2003-07-31 Berres Mark E. Method of genotyping by determination of allele copy number
US6642661B2 (en) * 2001-08-28 2003-11-04 Tokyo Electron Limited Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor
JP2005527983A (en) * 2002-05-29 2005-09-15 東京エレクトロン株式会社 Method and system for data handling, storage and operation
US7084369B2 (en) * 2002-08-20 2006-08-01 Tokyo Electron Limited Harmonic multiplexer
WO2005017996A1 (en) * 2003-03-14 2005-02-24 Andreas Mandelis Method of photocarrier radiometry of semiconductors
US7901952B2 (en) 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US6791274B1 (en) * 2003-07-15 2004-09-14 Advanced Energy Industries, Inc. RF power control device for RF plasma applications
US7328126B2 (en) * 2003-09-12 2008-02-05 Tokyo Electron Limited Method and system of diagnosing a processing system using adaptive multivariate analysis
US7602127B2 (en) 2005-04-18 2009-10-13 Mks Instruments, Inc. Phase and frequency control of a radio frequency generator from an external source
US8102954B2 (en) * 2005-04-26 2012-01-24 Mks Instruments, Inc. Frequency interference detection and correction
US8995502B1 (en) * 2006-04-04 2015-03-31 Apple Inc. Transceiver with spectral analysis
US20070246162A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency
US7821250B2 (en) * 2006-07-31 2010-10-26 Inficon, Inc. RF sensor clamp assembly
US7884025B2 (en) * 2007-01-30 2011-02-08 Applied Materials, Inc. Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources
US20080178803A1 (en) * 2007-01-30 2008-07-31 Collins Kenneth S Plasma reactor with ion distribution uniformity controller employing plural vhf sources
US8049620B2 (en) * 2007-06-15 2011-11-01 Icove And Associates, Llc Passive microwave fire and intrusion detection system including black body and spectral emission at the hydrogen, hydroxyl and hydrogen chloride lines
DE602008005858D1 (en) * 2008-03-20 2011-05-12 Univ Ruhr Bochum Method for controlling ion energy in radio frequency plasmas
US8018164B2 (en) * 2008-05-29 2011-09-13 Applied Materials, Inc. Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources
US8040068B2 (en) * 2009-02-05 2011-10-18 Mks Instruments, Inc. Radio frequency power control system
US9287086B2 (en) * 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US8343371B2 (en) * 2010-01-15 2013-01-01 Tokyo Electron Limited Apparatus and method for improving photoresist properties using a quasi-neutral beam
US9309594B2 (en) * 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
KR20120041427A (en) * 2010-10-21 2012-05-02 삼성전자주식회사 Plasma diagnostic apparatus and control method the same
US20120163508A1 (en) * 2010-12-27 2012-06-28 Motorola, Inc. Subcarrier placement strategy for a multi-carrier signal
US8980760B2 (en) * 2011-04-29 2015-03-17 Applied Materials, Inc. Methods and apparatus for controlling plasma in a process chamber
US9040907B2 (en) * 2011-10-31 2015-05-26 Mks Instruments, Inc. Method and apparatus for tuning an electrostatic ion trap
US9368329B2 (en) * 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US8773019B2 (en) 2012-02-23 2014-07-08 Mks Instruments, Inc. Feedback control and coherency of multiple power supplies in radio frequency power delivery systems for pulsed mode schemes in thin film processing
US8952765B2 (en) * 2012-03-23 2015-02-10 Mks Instruments, Inc. System and methods of bimodal automatic power and frequency tuning of RF generators
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
US9271333B2 (en) * 2012-07-26 2016-02-23 General Electric Company Demand side management control system and methods
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
WO2014099822A2 (en) * 2012-12-17 2014-06-26 Brady Patrick K System and method for identifying materials using a thz spectral fingerprint in a media with high water content
JP6078347B2 (en) 2013-01-08 2017-02-08 株式会社日立ハイテクノロジーズ Plasma processing equipment
US9107284B2 (en) * 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US10821542B2 (en) * 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
DE102014105445A1 (en) * 2013-04-26 2014-10-30 Mks Instruments Inc. Frequency and phase control of a multi-radio frequency power supply
US9336995B2 (en) * 2013-04-26 2016-05-10 Mks Instruments, Inc. Multiple radio frequency power supply control of frequency and phase
US20140367043A1 (en) * 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
EP3091559A1 (en) * 2015-05-05 2016-11-09 TRUMPF Huettinger Sp. Z o. o. Plasma impedance matching unit, system for supplying rf power to a plasma load, and method of supplying rf power to a plasma load

Also Published As

Publication number Publication date
US10395895B2 (en) 2019-08-27
JP2018534716A (en) 2018-11-22
TWI656810B (en) 2019-04-11
US20190333738A1 (en) 2019-10-31
CN112908824B (en) 2024-03-22
CN107924806B (en) 2021-02-05
JP7092824B2 (en) 2022-06-28
WO2017034632A1 (en) 2017-03-02
JP6692895B2 (en) 2020-05-13
US10692698B2 (en) 2020-06-23
EP3341955B1 (en) 2022-10-26
JP2020129544A (en) 2020-08-27
EP3341955A1 (en) 2018-07-04
KR102364174B1 (en) 2022-02-18
KR20180036786A (en) 2018-04-09
US20170062186A1 (en) 2017-03-02
TW201709774A (en) 2017-03-01
CN107924806A (en) 2018-04-17
CN112908824A (en) 2021-06-04
EP3341955A4 (en) 2019-04-03

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