SG10201808257QA - Supervisory control of radio frequency (rf) impedance tuning operation - Google Patents
Supervisory control of radio frequency (rf) impedance tuning operationInfo
- Publication number
- SG10201808257QA SG10201808257QA SG10201808257QA SG10201808257QA SG10201808257QA SG 10201808257Q A SG10201808257Q A SG 10201808257QA SG 10201808257Q A SG10201808257Q A SG 10201808257QA SG 10201808257Q A SG10201808257Q A SG 10201808257QA SG 10201808257Q A SG10201808257Q A SG 10201808257QA
- Authority
- SG
- Singapore
- Prior art keywords
- radio frequency
- signal
- frequency
- supervisory control
- matching network
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/378—A variable capacitor being added in the output circuit, e.g. collector, drain, of an amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
# # # SUPERVISORY CONTROL OF RADIO FREQUENCY (RF) IMPEDANCE TUNING OPERATION A radio frequency (RF) control system including a RF generator having a power amplifier that outputs a RF signal and a controller. A matching network receives the RF signal and generates at least one RF output signal. In a first mode of operation, the controller enables adjustment of the frequency of the RF signal and a tune element of the matching network to achieve an impedance match and in a second mode of operation the controller enables adjustment of only the tune element of the matching network to achieve an imped- Set impedance match while the frequency is adjusted to a target frequency. The RF controls system operates in a continuous and pulse mode of operation. FIG. 4 accompanies abstract. 29
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/828,597 US9876476B2 (en) | 2015-08-18 | 2015-08-18 | Supervisory control of radio frequency (RF) impedance tuning operation |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201808257QA true SG10201808257QA (en) | 2018-10-30 |
Family
ID=58050933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201808257QA SG10201808257QA (en) | 2015-08-18 | 2016-08-08 | Supervisory control of radio frequency (rf) impedance tuning operation |
Country Status (8)
Country | Link |
---|---|
US (2) | US9876476B2 (en) |
EP (1) | EP3338295A4 (en) |
JP (1) | JP6692894B2 (en) |
KR (1) | KR102330684B1 (en) |
CN (1) | CN107924804B (en) |
SG (1) | SG10201808257QA (en) |
TW (1) | TWI690245B (en) |
WO (1) | WO2017030816A1 (en) |
Families Citing this family (20)
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US10679825B2 (en) * | 2017-11-15 | 2020-06-09 | Lam Research Corporation | Systems and methods for applying frequency and match tuning in a non-overlapping manner for processing substrate |
US11749504B2 (en) * | 2018-02-28 | 2023-09-05 | Applied Materials, Inc. | Methods and apparatus for common excitation of frequency generators |
US10304660B1 (en) * | 2018-03-21 | 2019-05-28 | Lam Research Corporation | Multi-level pulsing of DC and RF signals |
KR20200142565A (en) * | 2018-04-20 | 2020-12-22 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | System and method for control of high efficiency generator source impedance |
CN110416047B (en) * | 2018-04-27 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Radio frequency impedance matching method and device and semiconductor processing equipment |
CN110504149B (en) * | 2018-05-17 | 2022-04-22 | 北京北方华创微电子装备有限公司 | Pulse modulation system and method of radio frequency power supply |
FR3087809B1 (en) * | 2018-10-30 | 2022-01-21 | Continental Automotive France | PRESENCE DETECTION SENSOR FOR MOTOR VEHICLE |
KR102126937B1 (en) | 2018-12-03 | 2020-06-25 | 주식회사 뉴파워 프라즈마 | Reverse power reducing method and plasma power apparatus using it |
GB2580155A (en) * | 2018-12-21 | 2020-07-15 | Comet Ag | Radiofrequency power amplifier |
KR102348338B1 (en) | 2019-02-07 | 2022-01-06 | 엠케이에스코리아 유한회사 | The Driving Frequency Control Method of The Pulsed Frequency Variable RF Generator |
US11177115B2 (en) * | 2019-06-03 | 2021-11-16 | Applied Materials, Inc. | Dual-level pulse tuning |
US11587767B2 (en) | 2019-06-19 | 2023-02-21 | Analogic Corporation | Radio frequency generators, and related systems, methods, and devices |
US11626907B2 (en) * | 2019-06-19 | 2023-04-11 | Analogic Corporation | Radio frequency generators, and related systems, methods, and devices |
US11158488B2 (en) | 2019-06-26 | 2021-10-26 | Mks Instruments, Inc. | High speed synchronization of plasma source/bias power delivery |
US11315757B2 (en) * | 2019-08-13 | 2022-04-26 | Mks Instruments, Inc. | Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications |
US10741363B1 (en) * | 2019-10-08 | 2020-08-11 | Mks Instruments, Inc. | Extremum seeking control apparatus and method for automatic frequency tuning for RF impedance matching |
JP7348101B2 (en) | 2020-02-18 | 2023-09-20 | 株式会社京三製作所 | Control method of high frequency power supply device and high frequency power supply device |
US11527384B2 (en) * | 2020-11-24 | 2022-12-13 | Mks Instruments, Inc. | Apparatus and tuning method for mitigating RF load impedance variations due to periodic disturbances |
US20240087850A1 (en) * | 2022-09-08 | 2024-03-14 | Mks Instruments, Inc. | Extremum Seeking Control Apparatuses With Online Parameter Adjustment And Methods |
CN117811531A (en) * | 2024-02-28 | 2024-04-02 | 深圳市瀚强科技股份有限公司 | Matching state feedback circuit and radio frequency power supply equipment |
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US3117279A (en) | 1962-06-04 | 1964-01-07 | Collins Radio Co | Automatically controlled antenna tuning and loading system |
US3443231A (en) | 1966-04-27 | 1969-05-06 | Gulf General Atomic Inc | Impedance matching system |
US3601717A (en) | 1969-11-20 | 1971-08-24 | Gen Dynamics Corp | System for automatically matching a radio frequency power output circuit to a load |
JP3001658B2 (en) * | 1991-03-28 | 2000-01-24 | 日本原子力研究所 | High frequency heating equipment |
JP3183914B2 (en) | 1991-08-29 | 2001-07-09 | 株式会社ダイヘン | Automatic impedance matching device |
JP2884056B2 (en) * | 1995-12-07 | 1999-04-19 | パール工業株式会社 | High frequency power supply for generating discharge plasma and semiconductor manufacturing apparatus |
US6887339B1 (en) | 2000-09-20 | 2005-05-03 | Applied Science And Technology, Inc. | RF power supply with integrated matching network |
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-
2015
- 2015-08-18 US US14/828,597 patent/US9876476B2/en active Active
-
2016
- 2016-07-22 TW TW105123174A patent/TWI690245B/en active
- 2016-08-08 JP JP2018508201A patent/JP6692894B2/en active Active
- 2016-08-08 SG SG10201808257QA patent/SG10201808257QA/en unknown
- 2016-08-08 EP EP16837500.4A patent/EP3338295A4/en active Pending
- 2016-08-08 WO PCT/US2016/045953 patent/WO2017030816A1/en active Application Filing
- 2016-08-08 KR KR1020187007121A patent/KR102330684B1/en active IP Right Grant
- 2016-08-08 CN CN201680048481.0A patent/CN107924804B/en active Active
-
2017
- 2017-12-19 US US15/846,922 patent/US10666206B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI690245B (en) | 2020-04-01 |
TW201713171A (en) | 2017-04-01 |
EP3338295A4 (en) | 2019-04-10 |
US10666206B2 (en) | 2020-05-26 |
US20170054418A1 (en) | 2017-02-23 |
KR102330684B1 (en) | 2021-11-24 |
EP3338295A1 (en) | 2018-06-27 |
KR20180031789A (en) | 2018-03-28 |
CN107924804B (en) | 2020-01-07 |
US9876476B2 (en) | 2018-01-23 |
JP6692894B2 (en) | 2020-05-13 |
US20180109230A1 (en) | 2018-04-19 |
WO2017030816A1 (en) | 2017-02-23 |
CN107924804A (en) | 2018-04-17 |
JP2018533855A (en) | 2018-11-15 |
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