WO2011105873A3 - 펄스 플라즈마의 dc 파워 인가에 따른 동기화 제어 방법 - Google Patents

펄스 플라즈마의 dc 파워 인가에 따른 동기화 제어 방법 Download PDF

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Publication number
WO2011105873A3
WO2011105873A3 PCT/KR2011/001400 KR2011001400W WO2011105873A3 WO 2011105873 A3 WO2011105873 A3 WO 2011105873A3 KR 2011001400 W KR2011001400 W KR 2011001400W WO 2011105873 A3 WO2011105873 A3 WO 2011105873A3
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WO
WIPO (PCT)
Prior art keywords
power
applying
controlling synchronization
pulse plasma
pulse
Prior art date
Application number
PCT/KR2011/001400
Other languages
English (en)
French (fr)
Other versions
WO2011105873A2 (ko
Inventor
염근영
강세구
전민환
박종윤
박병재
연제관
Original Assignee
성균관대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 성균관대학교산학협력단 filed Critical 성균관대학교산학협력단
Publication of WO2011105873A2 publication Critical patent/WO2011105873A2/ko
Publication of WO2011105873A3 publication Critical patent/WO2011105873A3/ko
Priority to US13/594,452 priority Critical patent/US20130049592A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Plasma Technology (AREA)

Abstract

펄스 플라즈마의 DC 파워 인가에 따른 동기화 제어 방법이 개시된다. 본 발명에 의한 펄스 플라즈마의 DC 파워 인가에 따른 동기화 제어 방법은 RF 펄스 파워의 온/오프 주기에 맞추어 DC 파워를 마이너스(-) 파워 주기 및 플러스(+) 파워 주기가 조절되도록 인가함으로써 각 공정에 적합한 플라즈마를 형성하여 공정 효율을 극대화할 수 있다.
PCT/KR2011/001400 2010-02-26 2011-02-28 펄스 플라즈마의 dc 파워 인가에 따른 동기화 제어 방법 WO2011105873A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/594,452 US20130049592A1 (en) 2010-02-26 2012-08-24 Method for controlling synchronization of pulsed plasma by applying dc power

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100017680A KR101214758B1 (ko) 2010-02-26 2010-02-26 식각 방법
KR10-2010-0017680 2010-02-26

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/594,452 Continuation US20130049592A1 (en) 2010-02-26 2012-08-24 Method for controlling synchronization of pulsed plasma by applying dc power

Publications (2)

Publication Number Publication Date
WO2011105873A2 WO2011105873A2 (ko) 2011-09-01
WO2011105873A3 true WO2011105873A3 (ko) 2012-01-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/001400 WO2011105873A2 (ko) 2010-02-26 2011-02-28 펄스 플라즈마의 dc 파워 인가에 따른 동기화 제어 방법

Country Status (3)

Country Link
US (1) US20130049592A1 (ko)
KR (1) KR101214758B1 (ko)
WO (1) WO2011105873A2 (ko)

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Also Published As

Publication number Publication date
KR101214758B1 (ko) 2012-12-21
KR20110098199A (ko) 2011-09-01
US20130049592A1 (en) 2013-02-28
WO2011105873A2 (ko) 2011-09-01

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