ATE487810T1 - Algainassb-ätzung - Google Patents

Algainassb-ätzung

Info

Publication number
ATE487810T1
ATE487810T1 AT03768404T AT03768404T ATE487810T1 AT E487810 T1 ATE487810 T1 AT E487810T1 AT 03768404 T AT03768404 T AT 03768404T AT 03768404 T AT03768404 T AT 03768404T AT E487810 T1 ATE487810 T1 AT E487810T1
Authority
AT
Austria
Prior art keywords
etching
doped
zgaxinzas1
ysby
algainassb
Prior art date
Application number
AT03768404T
Other languages
English (en)
Inventor
Renato Bugge
Bjoern-Ove Fimland
Original Assignee
Integrated Optoelectronics As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Optoelectronics As filed Critical Integrated Optoelectronics As
Application granted granted Critical
Publication of ATE487810T1 publication Critical patent/ATE487810T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30617—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Luminescent Compositions (AREA)
AT03768404T 2002-12-27 2003-12-19 Algainassb-ätzung ATE487810T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NO20026261A NO324780B1 (no) 2002-12-27 2002-12-27 Fremgangsmate for vatsyreetsing av AlGaInAsSb-strukturer og anvendelse av vatt, surt etsemiddel
PCT/NO2003/000429 WO2004059038A1 (en) 2002-12-27 2003-12-19 Etching of algainassb

Publications (1)

Publication Number Publication Date
ATE487810T1 true ATE487810T1 (de) 2010-11-15

Family

ID=19914338

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03768404T ATE487810T1 (de) 2002-12-27 2003-12-19 Algainassb-ätzung

Country Status (7)

Country Link
US (2) US20060240670A1 (de)
EP (1) EP1581668B1 (de)
AT (1) ATE487810T1 (de)
AU (1) AU2003291781A1 (de)
DE (1) DE60334929D1 (de)
NO (1) NO324780B1 (de)
WO (1) WO2004059038A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004037191B4 (de) * 2004-07-30 2008-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterbautelement mit einer Passivierungsschicht und Verfahren zu seiner Herstellung
US8153019B2 (en) 2007-08-06 2012-04-10 Micron Technology, Inc. Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices
EP2329534A1 (de) * 2008-09-25 2011-06-08 California Institute of Technology Hochleistungs-temperaturbarrieren-infrarotdetektor mit einstellbarer grenzwellenlänge
JP6121959B2 (ja) * 2014-09-11 2017-04-26 株式会社東芝 エッチング方法、物品及び半導体装置の製造方法、並びにエッチング液
JP6294536B2 (ja) * 2016-05-23 2018-03-14 住友化学株式会社 液晶組成物
RU2699347C1 (ru) * 2019-04-17 2019-09-04 Акционерное общество "НПО "Орион" Состав меза-травителя для антимонида индия ориентации (100)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5235993B1 (de) 1971-06-30 1977-09-12
SU784635A1 (ru) 1979-07-20 1982-01-30 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Травитель дл химического полировани антимонидов инди и галли
SU1135382A1 (ru) 1983-02-25 1986-10-15 Ордена Трудового Красного Знамени Институт Радиотехники И Электроники Ан Ссср Травитель дл прецизионного химического полировани монокристаллов антимонида гали и твердых растворов на его основе
JPH0836079A (ja) * 1994-07-21 1996-02-06 Mitsubishi Nuclear Fuel Co Ltd 燃料集合体に用いられるグリッドのロー付け方法及び該方法によりロー付けされた燃料集合体用グリッド
US5577061A (en) * 1994-12-16 1996-11-19 Hughes Aircraft Company Superlattice cladding layers for mid-infrared lasers
US5798540A (en) * 1997-04-29 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with InAlAsSb/AlSb barrier
US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
WO2002017448A1 (en) * 2000-08-22 2002-02-28 Regents Of The University Of California, The Distributed bragg reflectors incorporating sb material for long-wavelength vertical cavity surface emitting lasers
CN1152154C (zh) 2001-05-11 2004-06-02 中国科学院上海冶金研究所 制备锑化镓基半导体器件用的化学腐蚀液

Also Published As

Publication number Publication date
EP1581668B1 (de) 2010-11-10
WO2004059038A1 (en) 2004-07-15
NO20026261D0 (no) 2002-12-27
AU2003291781A1 (en) 2004-07-22
NO20026261L (no) 2004-06-28
US20110021032A1 (en) 2011-01-27
DE60334929D1 (de) 2010-12-23
US20060240670A1 (en) 2006-10-26
EP1581668A1 (de) 2005-10-05
NO324780B1 (no) 2007-12-10

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Legal Events

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