ATE480799T1 - Positiv arbeitende resistzusammensetzung - Google Patents

Positiv arbeitende resistzusammensetzung

Info

Publication number
ATE480799T1
ATE480799T1 AT04007652T AT04007652T ATE480799T1 AT E480799 T1 ATE480799 T1 AT E480799T1 AT 04007652 T AT04007652 T AT 04007652T AT 04007652 T AT04007652 T AT 04007652T AT E480799 T1 ATE480799 T1 AT E480799T1
Authority
AT
Austria
Prior art keywords
acid
group
resistant composition
decomposable group
positive working
Prior art date
Application number
AT04007652T
Other languages
German (de)
English (en)
Inventor
Koji Shirakawa
Toru Fujimori
Shoichiro Yasunami
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Application granted granted Critical
Publication of ATE480799T1 publication Critical patent/ATE480799T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT04007652T 2003-03-31 2004-03-30 Positiv arbeitende resistzusammensetzung ATE480799T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003094331A JP4115322B2 (ja) 2003-03-31 2003-03-31 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
ATE480799T1 true ATE480799T1 (de) 2010-09-15

Family

ID=32866688

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04007652T ATE480799T1 (de) 2003-03-31 2004-03-30 Positiv arbeitende resistzusammensetzung

Country Status (5)

Country Link
US (2) US7361446B2 (enExample)
EP (1) EP1467251B1 (enExample)
JP (1) JP4115322B2 (enExample)
AT (1) ATE480799T1 (enExample)
DE (1) DE602004028982D1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT412971B (de) * 2003-07-23 2005-09-26 Surface Specialties Austria Hydroxyfunktionelle bindemittelkomponenten, verfahren zu deren herstellung und deren verwendung
JP4611813B2 (ja) * 2005-06-15 2011-01-12 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP4670624B2 (ja) * 2005-12-14 2011-04-13 Ｊｓｒ株式会社 感放射線性樹脂組成物
US7601480B2 (en) * 2006-12-20 2009-10-13 Az Electronic Materials Usa Corp. Photoactive compounds
JP5601286B2 (ja) * 2011-07-25 2014-10-08 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP2025015446A (ja) * 2023-07-19 2025-01-30 信越化学工業株式会社 フォトリソグラフィー用塗布材料、レジスト材料及びパターン形成方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
DE4007924A1 (de) 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
JP3627226B2 (ja) 1996-05-30 2005-03-09 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3802179B2 (ja) 1997-02-07 2006-07-26 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP3832786B2 (ja) 1998-04-24 2006-10-11 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
JP2001075284A (ja) * 1998-12-03 2001-03-23 Fuji Photo Film Co Ltd ポジ型レジスト組成物
TWI277830B (en) * 1999-01-28 2007-04-01 Sumitomo Chemical Co Resist composition
JP3963625B2 (ja) 1999-02-24 2007-08-22 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP3936491B2 (ja) 1999-05-28 2007-06-27 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP3963624B2 (ja) 1999-12-22 2007-08-22 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP4562240B2 (ja) 2000-05-10 2010-10-13 富士フイルム株式会社 ポジ型感放射線性組成物及びそれを用いたパターン形成方法
JP4177952B2 (ja) * 2000-05-22 2008-11-05 富士フイルム株式会社 ポジ型レジスト組成物
US6692897B2 (en) * 2000-07-12 2004-02-17 Fuji Photo Film Co., Ltd. Positive resist composition
JP4190138B2 (ja) 2000-08-02 2008-12-03 富士フイルム株式会社 ポジ型フォトレジスト組成物
JP4253427B2 (ja) * 2000-09-19 2009-04-15 富士フイルム株式会社 ポジ型レジスト組成物
JP3992993B2 (ja) 2001-02-21 2007-10-17 富士フイルム株式会社 ポジ型電子線、ｘ線又はｅｕｖ用レジスト組成物
JP4025074B2 (ja) * 2001-09-19 2007-12-19 富士フイルム株式会社 ポジ型レジスト組成物
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray

Also Published As

Publication number Publication date
JP2004302080A (ja) 2004-10-28
EP1467251B1 (en) 2010-09-08
US20080096130A1 (en) 2008-04-24
EP1467251A1 (en) 2004-10-13
US8080362B2 (en) 2011-12-20
US20040197702A1 (en) 2004-10-07
US7361446B2 (en) 2008-04-22
DE602004028982D1 (de) 2010-10-21
JP4115322B2 (ja) 2008-07-09

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