ATE473513T1 - Impedanzanpassung eines kapazitiv gekoppelten hf- plasmareaktors mit eignung für grossflächige substrate - Google Patents

Impedanzanpassung eines kapazitiv gekoppelten hf- plasmareaktors mit eignung für grossflächige substrate

Info

Publication number
ATE473513T1
ATE473513T1 AT05801054T AT05801054T ATE473513T1 AT E473513 T1 ATE473513 T1 AT E473513T1 AT 05801054 T AT05801054 T AT 05801054T AT 05801054 T AT05801054 T AT 05801054T AT E473513 T1 ATE473513 T1 AT E473513T1
Authority
AT
Austria
Prior art keywords
plasma reactor
impedance
reactor
capacitively coupled
impedance adjustment
Prior art date
Application number
AT05801054T
Other languages
German (de)
English (en)
Inventor
Andy Belinger
Original Assignee
Oerlikon Trading Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Trading Ag filed Critical Oerlikon Trading Ag
Application granted granted Critical
Publication of ATE473513T1 publication Critical patent/ATE473513T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Multi-Conductor Connections (AREA)
AT05801054T 2004-11-12 2005-11-11 Impedanzanpassung eines kapazitiv gekoppelten hf- plasmareaktors mit eignung für grossflächige substrate ATE473513T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62778404P 2004-11-12 2004-11-12
PCT/CH2005/000669 WO2006050632A2 (en) 2004-11-12 2005-11-11 Impedance matching of a capacitively coupled rf plasma reactor suitable for large area substrates

Publications (1)

Publication Number Publication Date
ATE473513T1 true ATE473513T1 (de) 2010-07-15

Family

ID=36218432

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05801054T ATE473513T1 (de) 2004-11-12 2005-11-11 Impedanzanpassung eines kapazitiv gekoppelten hf- plasmareaktors mit eignung für grossflächige substrate

Country Status (10)

Country Link
US (1) US20070252529A1 (OSRAM)
EP (1) EP1812949B1 (OSRAM)
JP (1) JP5086092B2 (OSRAM)
KR (1) KR101107393B1 (OSRAM)
CN (1) CN101057310B (OSRAM)
AT (1) ATE473513T1 (OSRAM)
AU (1) AU2005304253B8 (OSRAM)
DE (1) DE602005022221D1 (OSRAM)
TW (1) TW200625396A (OSRAM)
WO (1) WO2006050632A2 (OSRAM)

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KR100915613B1 (ko) * 2007-06-26 2009-09-07 삼성전자주식회사 펄스 플라즈마 매칭시스템 및 그 방법
TWI440405B (zh) * 2007-10-22 2014-06-01 New Power Plasma Co Ltd 電容式耦合電漿反應器
KR100979186B1 (ko) 2007-10-22 2010-08-31 다이나믹솔라디자인 주식회사 용량 결합 플라즈마 반응기
US20100018648A1 (en) * 2008-07-23 2010-01-28 Applied Marterials, Inc. Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring
US8734664B2 (en) 2008-07-23 2014-05-27 Applied Materials, Inc. Method of differential counter electrode tuning in an RF plasma reactor
US8578879B2 (en) * 2009-07-29 2013-11-12 Applied Materials, Inc. Apparatus for VHF impedance match tuning
WO2011026126A2 (en) * 2009-08-31 2011-03-03 Lam Research Corporation A multi-peripheral ring arrangement for performing plasma confinement
CN102487572B (zh) * 2010-12-02 2015-06-24 理想能源设备(上海)有限公司 等离子加工装置
TWI455172B (zh) 2010-12-30 2014-10-01 Semes Co Ltd 基板處理設備、電漿阻抗匹配裝置及可變電容器
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
CN102686004B (zh) * 2011-03-17 2015-05-13 中微半导体设备(上海)有限公司 用于等离子体发生器的可控制谐波的射频系统
US8932429B2 (en) * 2012-02-23 2015-01-13 Lam Research Corporation Electronic knob for tuning radial etch non-uniformity at VHF frequencies
CN102695353B (zh) * 2012-05-31 2015-08-12 浙江工商大学 利用高电压产生气体等离子放电基本单元及反应器
CN104685982B (zh) 2012-08-27 2019-07-30 伟巴斯特充电系统公司 便携式电动交通工具供电设备
CN103794895B (zh) * 2012-10-30 2016-02-24 新奥光伏能源有限公司 一种射频电源接入器
CN103388134B (zh) * 2013-07-22 2016-05-18 北京工业大学 容性耦合等离子体增强化学气相沉积制备厚度均匀薄膜的方法
CN103454489B (zh) * 2013-09-12 2016-09-21 清华大学 匹配网络的损耗功率标定方法及系统
US20180175819A1 (en) * 2016-12-16 2018-06-21 Lam Research Corporation Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor
US10536130B2 (en) * 2017-08-29 2020-01-14 Mks Instruments, Inc. Balancing RF circuit and control for a cross-coupled SIMO distribution network
WO2020126910A1 (en) * 2018-12-21 2020-06-25 Evatec Ag Vacuum treatment apparatus and method for vacuum plasma treating at least one substrate or for manufacturing a substrate
US11107661B2 (en) * 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology

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US3143594A (en) * 1960-07-13 1964-08-04 Samuel E Derby Demountable multiple stage ultra-high vacuum system
US3471396A (en) * 1967-04-10 1969-10-07 Ibm R.f. cathodic sputtering apparatus having an electrically conductive housing
DE2939167A1 (de) * 1979-08-21 1981-04-02 Coulter Systems Corp., Bedford, Mass. Vorrichtung und verfahren zur leistungszufuehrung an eine von dem entladungsplasma einer zerstaeubungsvorrichtung gebildeten last
JPH0354825A (ja) * 1989-07-21 1991-03-08 Tokyo Electron Ltd プラズマ処理装置
JPH0685542A (ja) * 1992-09-03 1994-03-25 Hitachi Metals Ltd 周波数可変マイクロ波発振器
US5981899A (en) * 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
JP2961103B1 (ja) * 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
JP2002316040A (ja) * 2001-04-24 2002-10-29 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor
JP4216054B2 (ja) * 2001-11-27 2009-01-28 アルプス電気株式会社 プラズマ処理装置及びその運転方法
TW200300650A (en) * 2001-11-27 2003-06-01 Alps Electric Co Ltd Plasma processing apparatus
JP4370789B2 (ja) * 2002-07-12 2009-11-25 東京エレクトロン株式会社 プラズマ処理装置及び可変インピーダンス手段の校正方法

Also Published As

Publication number Publication date
KR101107393B1 (ko) 2012-01-19
KR20070099526A (ko) 2007-10-09
US20070252529A1 (en) 2007-11-01
DE602005022221D1 (de) 2010-08-19
JP2008520091A (ja) 2008-06-12
AU2005304253A1 (en) 2006-05-18
WO2006050632A3 (en) 2006-07-27
AU2005304253B8 (en) 2011-01-20
AU2005304253B2 (en) 2010-12-23
EP1812949A2 (en) 2007-08-01
CN101057310A (zh) 2007-10-17
JP5086092B2 (ja) 2012-11-28
CN101057310B (zh) 2010-11-03
EP1812949B1 (en) 2010-07-07
WO2006050632A2 (en) 2006-05-18
TW200625396A (en) 2006-07-16

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