ATE464652T1 - Herstellung eines elektronischen bauelementes mit dünnfilm-transistor - Google Patents

Herstellung eines elektronischen bauelementes mit dünnfilm-transistor

Info

Publication number
ATE464652T1
ATE464652T1 AT01921354T AT01921354T ATE464652T1 AT E464652 T1 ATE464652 T1 AT E464652T1 AT 01921354 T AT01921354 T AT 01921354T AT 01921354 T AT01921354 T AT 01921354T AT E464652 T1 ATE464652 T1 AT E464652T1
Authority
AT
Austria
Prior art keywords
production
thin film
electronic component
film transistor
transistor
Prior art date
Application number
AT01921354T
Other languages
English (en)
Inventor
Nigel Young
John Ayres
Stanley Brotherton
Carole Fisher
Frank Rohlfing
Original Assignee
Tpo Hong Kong Holding Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tpo Hong Kong Holding Ltd filed Critical Tpo Hong Kong Holding Ltd
Priority claimed from PCT/EP2001/003557 external-priority patent/WO2001078130A1/en
Application granted granted Critical
Publication of ATE464652T1 publication Critical patent/ATE464652T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
AT01921354T 2000-04-07 2001-03-28 Herstellung eines elektronischen bauelementes mit dünnfilm-transistor ATE464652T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0008487.1A GB0008487D0 (en) 2000-04-07 2000-04-07 Electronic device manufacture
GBGB0027333.4A GB0027333D0 (en) 2000-04-07 2000-11-09 Electronic device manufacture
PCT/EP2001/003557 WO2001078130A1 (en) 2000-04-07 2001-03-28 Electronic device manufacture comprising a thin-film-transistor

Publications (1)

Publication Number Publication Date
ATE464652T1 true ATE464652T1 (de) 2010-04-15

Family

ID=9889364

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01921354T ATE464652T1 (de) 2000-04-07 2001-03-28 Herstellung eines elektronischen bauelementes mit dünnfilm-transistor

Country Status (4)

Country Link
KR (1) KR100771177B1 (de)
AT (1) ATE464652T1 (de)
DE (1) DE60141820D1 (de)
GB (2) GB0008487D0 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438523B1 (ko) * 2001-10-08 2004-07-03 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2245741A (en) * 1990-06-27 1992-01-08 Philips Electronic Associated Active matrix liquid crystal devices
JP3593212B2 (ja) * 1996-04-27 2004-11-24 株式会社半導体エネルギー研究所 表示装置

Also Published As

Publication number Publication date
KR100771177B1 (ko) 2007-10-30
DE60141820D1 (de) 2010-05-27
GB0008487D0 (en) 2000-05-24
KR20020032428A (ko) 2002-05-03
GB0027333D0 (en) 2000-12-27

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties