ATE453742T1 - Einkristalliner cvd diamant enthaltender verschleissteil - Google Patents
Einkristalliner cvd diamant enthaltender verschleissteilInfo
- Publication number
- ATE453742T1 ATE453742T1 AT04712623T AT04712623T ATE453742T1 AT E453742 T1 ATE453742 T1 AT E453742T1 AT 04712623 T AT04712623 T AT 04712623T AT 04712623 T AT04712623 T AT 04712623T AT E453742 T1 ATE453742 T1 AT E453742T1
- Authority
- AT
- Austria
- Prior art keywords
- single crystalline
- containing part
- cvd diamond
- low
- diamond containing
- Prior art date
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 3
- 239000010432 diamond Substances 0.000 title abstract 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000005491 wire drawing Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T408/00—Cutting by use of rotating axially moving tool
- Y10T408/81—Tool having crystalline cutting edge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Metal Extraction Processes (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Scissors And Nippers (AREA)
- Knitting Machines (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0303860.1A GB0303860D0 (en) | 2003-02-19 | 2003-02-19 | CVD diamond in wear applications |
PCT/IB2004/000416 WO2004074557A1 (en) | 2003-02-19 | 2004-02-19 | Cvd diamond in wear applications |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE453742T1 true ATE453742T1 (de) | 2010-01-15 |
Family
ID=9953331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04712623T ATE453742T1 (de) | 2003-02-19 | 2004-02-19 | Einkristalliner cvd diamant enthaltender verschleissteil |
Country Status (8)
Country | Link |
---|---|
US (1) | US7799427B2 (de) |
EP (1) | EP1599621B1 (de) |
JP (1) | JP4604021B2 (de) |
CN (1) | CN1771356B (de) |
AT (1) | ATE453742T1 (de) |
DE (1) | DE602004024868D1 (de) |
GB (2) | GB0303860D0 (de) |
WO (1) | WO2004074557A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4711677B2 (ja) | 2002-09-06 | 2011-06-29 | エレメント シックス リミテッド | 着色されたダイヤモンド |
JP5002982B2 (ja) * | 2005-04-15 | 2012-08-15 | 住友電気工業株式会社 | 単結晶ダイヤモンドの製造方法 |
EP1895579B1 (de) | 2005-06-20 | 2016-06-15 | Nippon Telegraph And Telephone Corporation | Diamanthalbleiterbauelement und herstellungsverfahren dafür |
JP5457028B2 (ja) | 2005-06-22 | 2014-04-02 | エレメント シックス リミテッド | ハイカラーのダイヤモンド層 |
GB0700984D0 (en) * | 2007-01-18 | 2007-02-28 | Element Six Ltd | Polycrystalline diamond elements having convex surfaces |
WO2008088048A1 (ja) * | 2007-01-19 | 2008-07-24 | Sumitomo Electric Industries, Ltd. | 伸線ダイス |
JP2008229810A (ja) * | 2007-03-23 | 2008-10-02 | Allied Material Corp | 超精密切削加工用ダイヤモンド工具 |
RU2522028C2 (ru) * | 2008-02-06 | 2014-07-10 | Сумитомо Электрик Индастриз, Лтд. | Поликристаллический алмаз |
US9017633B2 (en) * | 2010-01-18 | 2015-04-28 | Element Six Technologies Limited | CVD single crystal diamond material |
GB2481285B (en) * | 2010-06-03 | 2013-07-17 | Element Six Ltd | A method of increasing the toughness and/or wear resistance of diamond tool pieces and diamond tool pieces fabricated by said method |
CN101856673A (zh) * | 2010-06-18 | 2010-10-13 | 北京希波尔科技发展有限公司 | 一种复合结构的cvd金刚石拉丝模芯及制造方法和应用 |
EP2985368B1 (de) * | 2013-04-09 | 2023-08-30 | Sumitomo Electric Industries, Ltd. | Einkristalliner diamant und diamantwerkzeug |
JP6359805B2 (ja) * | 2013-04-30 | 2018-07-18 | 住友電気工業株式会社 | ダイヤモンド複合体、ダイヤモンド複合体の製造方法および単結晶ダイヤモンドの製造方法 |
KR102392424B1 (ko) | 2014-07-22 | 2022-05-02 | 스미토모덴키고교가부시키가이샤 | 단결정 다이아몬드 및 그 제조 방법, 단결정 다이아몬드를 포함하는 공구, 및 단결정 다이아몬드를 포함하는 부품 |
KR20180033529A (ko) * | 2015-07-22 | 2018-04-03 | 스미또모 덴꼬오 하드메탈 가부시끼가이샤 | 다이아몬드 다이스 |
CN105150090A (zh) * | 2015-08-19 | 2015-12-16 | 南京航空航天大学 | 基于可控织构cvd金刚石膜的蓝宝石球罩研磨工具 |
GB201620413D0 (en) | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
GB201620415D0 (en) * | 2016-12-01 | 2017-01-18 | Element Six Tech Ltd | Single crystal synthetic diamond material via chemical vapour deposition |
CN106582449B (zh) * | 2016-12-30 | 2019-07-19 | 郑州沃德超硬材料有限公司 | 多晶金刚石及其制备方法和用途 |
JP2017186255A (ja) * | 2017-07-12 | 2017-10-12 | 住友電気工業株式会社 | 単結晶ダイヤモンドおよびダイヤモンド工具 |
EP3815806B1 (de) * | 2018-06-27 | 2023-11-29 | Sumitomo Electric Hardmetal Corp. | Werkzeug mit durchgangsbohrung umfassend einer diamantkomponente |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL60566A (en) * | 1979-08-23 | 1983-02-23 | Gen Electric | Supported diamond and improved method for preparing diamond compacts containing single crystal diamonds |
JP2571795B2 (ja) | 1987-11-17 | 1997-01-16 | 住友電気工業株式会社 | 紫色ダイヤモンドおよびその製造方法 |
US6007916A (en) * | 1989-04-06 | 1999-12-28 | Sumitomo Electric Industries, Ltd. | Synthetic single crystal diamond for wiring drawing dies and process for producing the same |
US5474021A (en) | 1992-09-24 | 1995-12-12 | Sumitomo Electric Industries, Ltd. | Epitaxial growth of diamond from vapor phase |
JPH06107494A (ja) | 1992-09-24 | 1994-04-19 | Sumitomo Electric Ind Ltd | ダイヤモンドの気相成長法 |
JP3314444B2 (ja) | 1993-03-15 | 2002-08-12 | 住友電気工業株式会社 | 赤色ダイヤモンドおよび桃色ダイヤモンド |
JP3484749B2 (ja) | 1994-04-04 | 2004-01-06 | 住友電気工業株式会社 | ダイヤモンドの合成法 |
JPH0866900A (ja) * | 1994-08-25 | 1996-03-12 | Asahi Daiyamondo Kogyo Kk | ウォータージェットノズル |
JP4291886B2 (ja) | 1994-12-05 | 2009-07-08 | 住友電気工業株式会社 | 低欠陥ダイヤモンド単結晶及びその合成方法 |
US5634370A (en) * | 1995-07-07 | 1997-06-03 | General Electric Company | Composite diamond wire die |
JP4032482B2 (ja) | 1997-04-18 | 2008-01-16 | 住友電気工業株式会社 | 単結晶ダイヤモンドの製造方法 |
JP4356120B2 (ja) * | 1998-02-19 | 2009-11-04 | 三菱化学株式会社 | 高純度ジアリールカーボネート及びその製造方法 |
CN1210445C (zh) * | 2000-06-15 | 2005-07-13 | 六号元素(控股)公司 | 厚的单晶金刚石层、其制备方法和由该层生产的宝石 |
-
2003
- 2003-02-19 GB GBGB0303860.1A patent/GB0303860D0/en not_active Ceased
-
2004
- 2004-02-19 GB GB0518664A patent/GB2415189B/en not_active Expired - Lifetime
- 2004-02-19 DE DE602004024868T patent/DE602004024868D1/de not_active Expired - Lifetime
- 2004-02-19 EP EP04712623A patent/EP1599621B1/de not_active Expired - Lifetime
- 2004-02-19 US US10/546,188 patent/US7799427B2/en active Active
- 2004-02-19 AT AT04712623T patent/ATE453742T1/de not_active IP Right Cessation
- 2004-02-19 WO PCT/IB2004/000416 patent/WO2004074557A1/en active Application Filing
- 2004-02-19 JP JP2006502446A patent/JP4604021B2/ja not_active Expired - Lifetime
- 2004-02-19 CN CN2004800092883A patent/CN1771356B/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP4604021B2 (ja) | 2010-12-22 |
GB0303860D0 (en) | 2003-03-26 |
CN1771356B (zh) | 2010-04-14 |
EP1599621B1 (de) | 2009-12-30 |
CN1771356A (zh) | 2006-05-10 |
US7799427B2 (en) | 2010-09-21 |
WO2004074557A1 (en) | 2004-09-02 |
US20070054124A1 (en) | 2007-03-08 |
EP1599621A1 (de) | 2005-11-30 |
DE602004024868D1 (de) | 2010-02-11 |
GB2415189B (en) | 2007-09-26 |
GB0518664D0 (en) | 2005-10-19 |
JP2006518699A (ja) | 2006-08-17 |
GB2415189A (en) | 2005-12-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |