ATE453463T1 - Methode zur wiederholenden ionen-strahl- bearbeitung mit kohlenstoff enthaltendem ionen- strahl - Google Patents

Methode zur wiederholenden ionen-strahl- bearbeitung mit kohlenstoff enthaltendem ionen- strahl

Info

Publication number
ATE453463T1
ATE453463T1 AT00916428T AT00916428T ATE453463T1 AT E453463 T1 ATE453463 T1 AT E453463T1 AT 00916428 T AT00916428 T AT 00916428T AT 00916428 T AT00916428 T AT 00916428T AT E453463 T1 ATE453463 T1 AT E453463T1
Authority
AT
Austria
Prior art keywords
ion beam
containing carbon
inert gas
precipitates
carbon containing
Prior art date
Application number
AT00916428T
Other languages
English (en)
Inventor
Boris Druz
Kurt Williams
Alan Hayes
Original Assignee
Veeco Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instr Inc filed Critical Veeco Instr Inc
Application granted granted Critical
Publication of ATE453463T1 publication Critical patent/ATE453463T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Cleaning In General (AREA)
  • Electron Sources, Ion Sources (AREA)
AT00916428T 1999-03-17 2000-03-17 Methode zur wiederholenden ionen-strahl- bearbeitung mit kohlenstoff enthaltendem ionen- strahl ATE453463T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/270,998 US6464891B1 (en) 1999-03-17 1999-03-17 Method for repetitive ion beam processing with a carbon containing ion beam
PCT/US2000/006970 WO2000054899A1 (en) 1999-03-17 2000-03-17 A method for a repetitive ion beam processing with a by carbon containing ion beam

Publications (1)

Publication Number Publication Date
ATE453463T1 true ATE453463T1 (de) 2010-01-15

Family

ID=23033761

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00916428T ATE453463T1 (de) 1999-03-17 2000-03-17 Methode zur wiederholenden ionen-strahl- bearbeitung mit kohlenstoff enthaltendem ionen- strahl

Country Status (6)

Country Link
US (1) US6464891B1 (de)
EP (1) EP1161309B1 (de)
JP (1) JP2002539593A (de)
AT (1) ATE453463T1 (de)
DE (1) DE60043612D1 (de)
WO (1) WO2000054899A1 (de)

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US7176469B2 (en) * 2002-05-22 2007-02-13 The Regents Of The University Of California Negative ion source with external RF antenna
US6943350B2 (en) * 2002-08-27 2005-09-13 Kla-Tencor Technologies Corporation Methods and apparatus for electron beam inspection of samples
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DE102005054605B4 (de) * 2005-11-16 2010-09-30 Bruker Daltonik Gmbh Automatische Reinigung von Ionenquellen
US20070137063A1 (en) * 2005-12-21 2007-06-21 Hitachi Global Storage Technologies Netherlands, B.V. Carbon beam deposition chamber for reduced defects
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BRPI0710214A2 (pt) * 2006-03-31 2011-08-02 Hoya Corp sistema de canhão de ìons, aparelho de deposição por vapor, e, método para produzir lente
JP2009545101A (ja) * 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源
WO2009039382A1 (en) 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
US7863582B2 (en) * 2008-01-25 2011-01-04 Valery Godyak Ion-beam source
WO2009146432A1 (en) 2008-05-30 2009-12-03 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
EP2299922B1 (de) 2008-05-30 2016-11-09 Colorado State University Research Foundation Gerät zur erzeugung von plasma
WO2011123125A1 (en) 2010-03-31 2011-10-06 Colorado State University Research Foundation Liquid-gas interface plasma device
US20110021011A1 (en) * 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
FR2957454B1 (fr) * 2010-03-09 2013-05-17 Essilor Int Procede de conditionnement d'un canon a ions
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EP2402475A1 (de) * 2010-06-30 2012-01-04 Fei Company Strahleninduzierte Ablagerung bei kryogenischen Temperaturen
US20130161505A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8603363B1 (en) * 2012-06-20 2013-12-10 Praxair Technology, Inc. Compositions for extending ion source life and improving ion source performance during carbon implantation
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
CN104871286B (zh) * 2012-12-21 2018-06-26 普莱克斯技术有限公司 用于碳离子注入的掺杂物组合物的储存和负压输送
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
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US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
WO2017117053A1 (en) * 2015-12-27 2017-07-06 Entegris, Inc. Improving ion implant plasma flood gun (prg) performance by using trace insitu cleaning gas in sputtering gas mixture
WO2017196622A2 (en) 2016-05-11 2017-11-16 Veeco Instruments Inc. Ion beam materials processing system with grid short clearing system for gridded ion beam source
US9865436B1 (en) * 2016-06-10 2018-01-09 Plasma-Therm Nes Llc Powered anode for ion source for DLC and reactive processes
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Also Published As

Publication number Publication date
EP1161309A1 (de) 2001-12-12
DE60043612D1 (de) 2010-02-11
EP1161309A4 (de) 2008-04-16
EP1161309B1 (de) 2009-12-30
US6464891B1 (en) 2002-10-15
WO2000054899A1 (en) 2000-09-21
JP2002539593A (ja) 2002-11-19

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