DE60043612D1 - Methode zur wiederholenden ionen-strahl-bearbeitung mit kohlenstoff enthaltendem ionen-strahl - Google Patents

Methode zur wiederholenden ionen-strahl-bearbeitung mit kohlenstoff enthaltendem ionen-strahl

Info

Publication number
DE60043612D1
DE60043612D1 DE60043612T DE60043612T DE60043612D1 DE 60043612 D1 DE60043612 D1 DE 60043612D1 DE 60043612 T DE60043612 T DE 60043612T DE 60043612 T DE60043612 T DE 60043612T DE 60043612 D1 DE60043612 D1 DE 60043612D1
Authority
DE
Germany
Prior art keywords
ion beam
carbon containing
inert gas
repeating
precipitates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043612T
Other languages
English (en)
Inventor
Boris L Druz
Kurt E Williams
Alan V Hayes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Veeco Instruments Inc
Original Assignee
Veeco Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Veeco Instruments Inc filed Critical Veeco Instruments Inc
Application granted granted Critical
Publication of DE60043612D1 publication Critical patent/DE60043612D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Cleaning In General (AREA)
  • Electron Sources, Ion Sources (AREA)
DE60043612T 1999-03-17 2000-03-17 Methode zur wiederholenden ionen-strahl-bearbeitung mit kohlenstoff enthaltendem ionen-strahl Expired - Lifetime DE60043612D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/270,998 US6464891B1 (en) 1999-03-17 1999-03-17 Method for repetitive ion beam processing with a carbon containing ion beam
PCT/US2000/006970 WO2000054899A1 (en) 1999-03-17 2000-03-17 A method for a repetitive ion beam processing with a by carbon containing ion beam

Publications (1)

Publication Number Publication Date
DE60043612D1 true DE60043612D1 (de) 2010-02-11

Family

ID=23033761

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043612T Expired - Lifetime DE60043612D1 (de) 1999-03-17 2000-03-17 Methode zur wiederholenden ionen-strahl-bearbeitung mit kohlenstoff enthaltendem ionen-strahl

Country Status (6)

Country Link
US (1) US6464891B1 (de)
EP (1) EP1161309B1 (de)
JP (1) JP2002539593A (de)
AT (1) ATE453463T1 (de)
DE (1) DE60043612D1 (de)
WO (1) WO2000054899A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7176469B2 (en) * 2002-05-22 2007-02-13 The Regents Of The University Of California Negative ion source with external RF antenna
US6943350B2 (en) * 2002-08-27 2005-09-13 Kla-Tencor Technologies Corporation Methods and apparatus for electron beam inspection of samples
JP4646920B2 (ja) 2003-12-12 2011-03-09 セメクイップ， インコーポレイテッド イオン注入における設備の動作可能時間を延長するための方法および装置
DE102005054605B4 (de) * 2005-11-16 2010-09-30 Bruker Daltonik Gmbh Automatische Reinigung von Ionenquellen
US20070137063A1 (en) * 2005-12-21 2007-06-21 Hitachi Global Storage Technologies Netherlands, B.V. Carbon beam deposition chamber for reduced defects
KR100733844B1 (ko) * 2006-03-22 2007-06-29 성균관대학교산학협력단 중성빔을 이용한 플라즈마 발생장치 및 플라즈마 발생방법
EP2003225B1 (de) * 2006-03-31 2016-09-14 Hoya Corporation Ionwaffensystem, dampfablagerungsvorrichtung und verfahren zur linsenherstellung
EP2044610B1 (de) * 2006-07-20 2012-11-28 SPP Process Technology Systems UK Limited Plasmaquellen
WO2009039382A1 (en) 2007-09-21 2009-03-26 Semequip. Inc. Method for extending equipment uptime in ion implantation
US7863582B2 (en) * 2008-01-25 2011-01-04 Valery Godyak Ion-beam source
WO2009146432A1 (en) 2008-05-30 2009-12-03 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
WO2009146439A1 (en) 2008-05-30 2009-12-03 Colorado State University Research Foundation System, method and apparatus for generating plasma
US20110021011A1 (en) * 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
FR2957454B1 (fr) * 2010-03-09 2013-05-17 Essilor Int Procede de conditionnement d'un canon a ions
EP2554028B1 (de) 2010-03-31 2016-11-23 Colorado State University Research Foundation Plasmavorrichtung mit flüssig-gas-schnittstelle
EP2552340A4 (de) 2010-03-31 2015-10-14 Univ Colorado State Res Found Plasmavorrichtung mit flüssig-gas-schnittstelle
EP2402475A1 (de) * 2010-06-30 2012-01-04 Fei Company Strahleninduzierte Ablagerung bei kryogenischen Temperaturen
US20130164454A1 (en) * 2011-04-07 2013-06-27 Seagate Technology Llc Methods of forming layers
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US8603363B1 (en) * 2012-06-20 2013-12-10 Praxair Technology, Inc. Compositions for extending ion source life and improving ion source performance during carbon implantation
US9530615B2 (en) * 2012-08-07 2016-12-27 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source
EP2936540B1 (de) * 2012-12-21 2019-02-13 Praxair Technology Inc. Speicherung und subatmosphärische abgabe von zusammensetzungen zur dotierung einer kohlenstoffionenimplantation
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US9783884B2 (en) * 2013-03-14 2017-10-10 Varian Semiconductor Equipment Associates, Inc. Method for implementing low dose implant in a plasma system
CN108369886B (zh) * 2015-12-27 2020-08-14 恩特格里斯公司 通过在溅射气体混合物中使用痕量原位清洁气体改善离子布植等离子体浸没枪(pfg)性能
WO2017196622A2 (en) 2016-05-11 2017-11-16 Veeco Instruments Inc. Ion beam materials processing system with grid short clearing system for gridded ion beam source
US9865436B1 (en) * 2016-06-10 2018-01-09 Plasma-Therm Nes Llc Powered anode for ion source for DLC and reactive processes
SG10201705059TA (en) 2016-06-24 2018-01-30 Veeco Instr Inc Enhanced cathodic arc source for arc plasma deposition
US20240203683A1 (en) * 2022-12-15 2024-06-20 Veeco Instruments Inc. Grid surface conditioning for ion beam system

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913320A (en) 1974-11-13 1975-10-21 Ion Tech Inc Electron-bombardment ion sources
US4142958A (en) 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
JPS60133516A (ja) 1983-12-22 1985-07-16 Hitachi Ltd 薄膜磁気ヘツドの製造方法
US4490229A (en) 1984-07-09 1984-12-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Deposition of diamondlike carbon films
JPS6150335A (ja) * 1984-08-20 1986-03-12 Fujitsu Ltd エツチング方法
US4739214A (en) 1986-11-13 1988-04-19 Anatech Ltd. Dynamic electron emitter
US4778561A (en) 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
JP2940090B2 (ja) * 1990-07-06 1999-08-25 日新電機株式会社 質量分析装置を有するイオン源
JPH04112441A (ja) * 1990-08-31 1992-04-14 Toshiba Corp イオン注入装置及びそのクリーニング方法
US5274306A (en) 1990-08-31 1993-12-28 Kaufman & Robinson, Inc. Capacitively coupled radiofrequency plasma source
JP3253675B2 (ja) * 1991-07-04 2002-02-04 株式会社東芝 荷電ビーム照射装置及び方法
US5508368A (en) 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
US5438747A (en) 1994-03-09 1995-08-08 International Business Machines Corporation Method of making a thin film merged MR head with aligned pole tips
JPH08335447A (ja) * 1995-06-07 1996-12-17 Nissin Electric Co Ltd イオン源
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US5925212A (en) * 1995-09-05 1999-07-20 Applied Materials, Inc. Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
US5948283A (en) * 1996-06-28 1999-09-07 Lam Research Corporation Method and apparatus for enhancing outcome uniformity of direct-plasma processes

Also Published As

Publication number Publication date
EP1161309A4 (de) 2008-04-16
WO2000054899A1 (en) 2000-09-21
ATE453463T1 (de) 2010-01-15
US6464891B1 (en) 2002-10-15
EP1161309A1 (de) 2001-12-12
EP1161309B1 (de) 2009-12-30
JP2002539593A (ja) 2002-11-19

Similar Documents

Publication Publication Date Title
DE60043612D1 (de) Methode zur wiederholenden ionen-strahl-bearbeitung mit kohlenstoff enthaltendem ionen-strahl
EP1284305A3 (de) Verfahren und Vorrichtung zur Dampfabscheidung eines Kupferfilms
SG142213A1 (en) Etching of nano-imprint templates using an etch reactor
DE69725245D1 (de) Verfahren zur Ätzung von Substraten
DE60142685D1 (de) Verfahren zur ätzung von polysilizium mit einer verbesserten homogenität und einer reduzierten ätzratevariation
DE602004032334D1 (de) Antenne zur erzeugung gleichförmiger prozessraten
WO2007097822A3 (en) Enhancement of remote plasma source clean for dielectric films
WO2004027826A3 (en) System and method for removing material
WO2009102762A3 (en) Ion source cleaning in semiconductor processing systems
TW200608489A (en) Plasma treatment method and plasma etching method
TW200712757A (en) Method for plasma etching a chromium layer through a carbon hardmask suitable for photomask fabrication
TW201536114A (zh) 霍爾效應增強電容耦合電漿源、減輕系統、及真空處理系統
ATE420455T1 (de) Verfahren und gerät zur steuerung eines plasmavolumens
WO2005059942A3 (en) Method and apparatus for extending equipment uptime in ion implantation
ATE546824T1 (de) System zur plasmaunterstützten chemischen aufdampfung bei niedrigen energien
WO2002078042A3 (en) Neutral particle beam processing apparatus
TW200711757A (en) Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor
HUP0003120A2 (hu) Eljárás és berendezés oxidos nanokristályok előállítására
TW200623251A (en) Remote chamber methods for removing surface deposits
ATE427367T1 (de) Verfahren zur herstellung einer dunnen schicht von stabilisiertem fluorhaltigen silika, so beschichtetes substrat und so erhaltene ophthalmische linse
EP1187170A3 (de) Plasmafeste Quartzglas-Haltevorrichtung
ATE282466T1 (de) Zersetzung von fluorhaltigen verbindungen
WO2002073652A3 (en) Methods and apparatus for oxygen implantation
WO2004048258A8 (en) Method for forming carbon nanotubes
US9142392B2 (en) Self-cleaning radio frequency plasma source

Legal Events

Date Code Title Description
8364 No opposition during term of opposition