ATE430713T1 - Herstellungsverfahren für ein elektromechanisches bauteil auf einem ebenen substrat - Google Patents

Herstellungsverfahren für ein elektromechanisches bauteil auf einem ebenen substrat

Info

Publication number
ATE430713T1
ATE430713T1 AT07117116T AT07117116T ATE430713T1 AT E430713 T1 ATE430713 T1 AT E430713T1 AT 07117116 T AT07117116 T AT 07117116T AT 07117116 T AT07117116 T AT 07117116T AT E430713 T1 ATE430713 T1 AT E430713T1
Authority
AT
Austria
Prior art keywords
zone
plane substrate
sacrificial layer
production process
electromechanical component
Prior art date
Application number
AT07117116T
Other languages
English (en)
Inventor
Fabrice Casset
Cedric Durand
Pascal Ancey
Original Assignee
Commissariat Energie Atomique
St Microelectronics Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, St Microelectronics Sa filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE430713T1 publication Critical patent/ATE430713T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
    • H03H3/0073—Integration with other electronic structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02488—Vibration modes
    • H03H2009/02496—Horizontal, i.e. parallel to the substrate plane
AT07117116T 2006-09-27 2007-09-25 Herstellungsverfahren für ein elektromechanisches bauteil auf einem ebenen substrat ATE430713T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0653975A FR2906238B1 (fr) 2006-09-27 2006-09-27 Procede de realisation d'un composant electromecanique sur un substrat plan

Publications (1)

Publication Number Publication Date
ATE430713T1 true ATE430713T1 (de) 2009-05-15

Family

ID=38051558

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07117116T ATE430713T1 (de) 2006-09-27 2007-09-25 Herstellungsverfahren für ein elektromechanisches bauteil auf einem ebenen substrat

Country Status (6)

Country Link
US (1) US7625772B2 (de)
EP (1) EP1905734B1 (de)
JP (1) JP2008114363A (de)
AT (1) ATE430713T1 (de)
DE (1) DE602007001060D1 (de)
FR (1) FR2906238B1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2881416B1 (fr) * 2005-01-31 2007-06-01 St Microelectronics Crolles 2 Microresonateur
JP2006352984A (ja) * 2005-06-15 2006-12-28 Tdk Corp 圧電薄膜振動子およびその製造方法、並びにそれを用いた駆動装置および圧電モータ
FR2921916B1 (fr) * 2007-10-09 2011-04-29 Commissariat Energie Atomique Composant electromecanique vibrant a l'echelle nanometrique ou micrometrique a niveau de detection augmente
WO2009076534A1 (en) * 2007-12-11 2009-06-18 Cornell University Resonant body transistor and oscillator
FR2932788A1 (fr) * 2008-06-23 2009-12-25 Commissariat Energie Atomique Procede de fabrication d'un composant electromecanique mems / nems.
FR2932923B1 (fr) 2008-06-23 2011-03-25 Commissariat Energie Atomique Substrat heterogene comportant une couche sacrificielle et son procede de realisation.
FR2943654B1 (fr) * 2009-03-30 2011-08-26 Commissariat Energie Atomique Realisation d'un dispositif micro-electronique comportant un composant nems en silicium monocristallin et un transistor dont la grille est realisee dans la meme couche que la structure mobile de ce composant.
FR2973504B1 (fr) * 2011-03-31 2014-01-10 Commissariat Energie Atomique Systeme de mesure a resonateurs electromecaniques, procede de fabrication d'un tel systeme et procede de lecture d'au moins deux resonateurs electromecaniques
ITTO20110995A1 (it) * 2011-10-31 2013-05-01 St Microelectronics Srl Dispositivo micro-elettro-meccanico dotato di regioni conduttive sepolte e relativo procedimento di fabbricazione
DE102011089261B4 (de) * 2011-12-20 2014-11-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Transistorstruktur, Verfahren zur Herstellung einer Transistorstruktur, Kraftmesssystem
FR3026734B1 (fr) * 2014-10-02 2023-01-06 Commissariat Energie Atomique Structure mecanique comprenant un actionneur et des moyens d'amplification mecanique et procede de fabrication

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3460863B2 (ja) * 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
JPH10223914A (ja) * 1997-01-31 1998-08-21 Aisin Seiki Co Ltd 半導体マイクロマシンの製造方法
FR2799305B1 (fr) * 1999-10-05 2004-06-18 St Microelectronics Sa Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
DE10064494A1 (de) * 2000-12-22 2002-07-04 Bosch Gmbh Robert Verfahren zur Herstellung eines Halbleiterbauelements sowie ein nach dem Verfahren hergestelltes Halbleiterbauelement, wobei das Halbleiterbauelement insbesondere eine bewegliche Masse aufweist
FR2823032B1 (fr) 2001-04-03 2003-07-11 St Microelectronics Sa Resonateur electromecanique a poutre vibrante
US6736982B2 (en) * 2001-06-15 2004-05-18 Xiang Zheng Tu Micromachined vertical vibrating gyroscope
DE10226027A1 (de) * 2002-06-12 2003-12-24 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
FR2857952B1 (fr) * 2003-07-25 2005-12-16 St Microelectronics Sa Resonateur electromecanique et procede de fabrication d'un tel resonateur
FR2872501B1 (fr) * 2004-07-01 2006-11-03 Commissariat Energie Atomique Microresonateur composite a forte deformation
FR2881416B1 (fr) * 2005-01-31 2007-06-01 St Microelectronics Crolles 2 Microresonateur
JP2007005909A (ja) * 2005-06-21 2007-01-11 Matsushita Electric Ind Co Ltd 電気機械信号選択素子、その製造方法およびそれを用いた電気機器

Also Published As

Publication number Publication date
FR2906238A1 (fr) 2008-03-28
US20080076211A1 (en) 2008-03-27
EP1905734B1 (de) 2009-05-06
FR2906238B1 (fr) 2008-12-19
DE602007001060D1 (de) 2009-06-18
JP2008114363A (ja) 2008-05-22
US7625772B2 (en) 2009-12-01
EP1905734A1 (de) 2008-04-02

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