ATE429035T1 - Verfahren zum verkürzen der reaktionszeit eines detektors für strahlung und ein detektor, der dieses verfahren benützt - Google Patents

Verfahren zum verkürzen der reaktionszeit eines detektors für strahlung und ein detektor, der dieses verfahren benützt

Info

Publication number
ATE429035T1
ATE429035T1 AT98870096T AT98870096T ATE429035T1 AT E429035 T1 ATE429035 T1 AT E429035T1 AT 98870096 T AT98870096 T AT 98870096T AT 98870096 T AT98870096 T AT 98870096T AT E429035 T1 ATE429035 T1 AT E429035T1
Authority
AT
Austria
Prior art keywords
substrate
shadow mask
electromagnetic radiation
absorbed
detector
Prior art date
Application number
AT98870096T
Other languages
English (en)
Inventor
Maarten Kuijk
Paul Heremans
Daniel Coppee
Roger Vounckx
Original Assignee
Imec Inter Uni Micro Electr
Univ Bruxelles
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr, Univ Bruxelles filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE429035T1 publication Critical patent/ATE429035T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Radiation (AREA)
AT98870096T 1997-04-30 1998-04-28 Verfahren zum verkürzen der reaktionszeit eines detektors für strahlung und ein detektor, der dieses verfahren benützt ATE429035T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP97870061 1997-04-30
EP97870076A EP0875939A1 (de) 1997-04-30 1997-05-29 Räumlich modulierter Detektor für elektromagnetische Strahlung

Publications (1)

Publication Number Publication Date
ATE429035T1 true ATE429035T1 (de) 2009-05-15

Family

ID=26148236

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98870096T ATE429035T1 (de) 1997-04-30 1998-04-28 Verfahren zum verkürzen der reaktionszeit eines detektors für strahlung und ein detektor, der dieses verfahren benützt

Country Status (5)

Country Link
US (1) US6157035A (de)
EP (1) EP0875939A1 (de)
JP (1) JPH1164100A (de)
AT (1) ATE429035T1 (de)
DE (1) DE69840738D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6342721B1 (en) * 1998-11-06 2002-01-29 Hughes Electronics Corporation Enhanced non-steady-state photo-induced electromotive force detector
US6485198B1 (en) * 2001-12-12 2002-11-26 Industrial Technology Research Institute Optoelectronic transceiver having integrated optical and electronic components
US20040089790A1 (en) * 2002-11-07 2004-05-13 Rubin Mark E. Spatially modulated photodetectors
US7620330B2 (en) * 2003-06-05 2009-11-17 Tom Faska Optical receiver device and method
ATE456158T1 (de) 2003-09-02 2010-02-15 Univ Bruxelles Ein durch einen strom aus majoritätsträgern unterstützter detektor für elektromagnetische strahlung
WO2005078801A1 (en) * 2004-02-17 2005-08-25 Nanyang Technological University Method and device for wavelength-sensitive photo-sensing
US7176542B2 (en) * 2004-04-22 2007-02-13 Hrl Lab Llc Photo induced-EMF sensor shield
US7180048B1 (en) 2005-11-03 2007-02-20 Intersil Americas Inc. Slow tail compensation
US20070152139A1 (en) * 2005-12-30 2007-07-05 Moores Mark D Techniques to control illumination for image sensors
US8997255B2 (en) * 2006-07-31 2015-03-31 Inside Secure Verifying data integrity in a data storage device
US8352752B2 (en) * 2006-09-01 2013-01-08 Inside Secure Detecting radiation-based attacks
US7755117B2 (en) 2006-12-12 2010-07-13 Intersil Americas Inc. Light sensors with infrared suppression
US8456410B2 (en) 2006-12-12 2013-06-04 Intersil Americas Inc. Backlight control using light sensors with infrared suppression
WO2008073783A2 (en) * 2006-12-12 2008-06-19 Intersil Americas Inc. Light sensors with infrared suppression and use of the sensors for backlight control
DE102006059573B3 (de) * 2006-12-16 2008-03-06 Batop Gmbh Anordnung zur Abstrahlung oder zum Empfang von Terahertz-Strahlung
ITMI20070101A1 (it) * 2007-01-24 2008-07-25 St Microelectronics Srl Optoisolatore galvanico integrato monoliticamente su silicio e relativo processo di integrazione
US7960807B2 (en) 2007-02-09 2011-06-14 Intersil Americas Inc. Ambient light detectors using conventional CMOS image sensor process
DE102008023991A1 (de) * 2008-05-16 2009-12-03 Forschungszentrum Dresden - Rossendorf E.V. Skalierbare Terahertz-Antennen, ihre Herstellung und Verwendung
DE102009041642A1 (de) * 2009-09-17 2011-03-31 Ohnesorge, Frank, Dr. Quantendrahtarray-Feldeffekt-(Leistungs-)-Transistor QFET (insbesondere magnetisch - MQFET, aber auch elektrisch oder optisch angesteuert) bei Raumtemperatur, basierend auf Polyacetylen-artige Moleküle
US8492699B2 (en) 2009-09-22 2013-07-23 Intersil Americas Inc. Photodetectors useful as ambient light sensors having an optical filter rejecting a portion of infrared light
GB2474631A (en) * 2009-10-14 2011-04-27 Optrima Nv Photonic Mixer
US8787776B2 (en) 2010-06-04 2014-07-22 The Governing Council Of The University Of Toronto Optical receiver with monolithically integrated photodetector
US8779542B2 (en) 2012-11-21 2014-07-15 Intersil Americas LLC Photodetectors useful as ambient light sensors and methods for use in manufacturing the same
EP2960952B1 (de) * 2014-06-27 2019-01-02 Sony Depthsensing Solutions SA/NV Strahlungsdetektor mit Unterstützung durch einen Stromfluss von Majoritätsladungsträgern

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096512A (en) * 1977-03-09 1978-06-20 Rca Corp. Monolithic light detector
US5130775A (en) * 1988-11-16 1992-07-14 Yamatake-Honeywell Co., Ltd. Amorphous photo-detecting element with spatial filter
JPH03120877A (ja) * 1989-10-04 1991-05-23 Sumitomo Electric Ind Ltd 受光素子
US5451769A (en) * 1994-01-05 1995-09-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Circular electrode geometry metal-semiconductor-metal photodetectors
US5841126A (en) * 1994-01-28 1998-11-24 California Institute Of Technology CMOS active pixel sensor type imaging system on a chip
US5625729A (en) * 1994-08-12 1997-04-29 Brown; Thomas G. Optoelectronic device for coupling between an external optical wave and a local optical wave for optical modulators and detectors
GB2324651B (en) * 1997-04-25 1999-09-01 Vlsi Vision Ltd Improved solid state image sensor

Also Published As

Publication number Publication date
JPH1164100A (ja) 1999-03-05
EP0875939A1 (de) 1998-11-04
DE69840738D1 (de) 2009-05-28
US6157035A (en) 2000-12-05

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