ATE425234T1 - Verfahren zur herstellung von ceroxid- schleifmitteln durch einstellung der brenntemperatur von cercarbonat - Google Patents

Verfahren zur herstellung von ceroxid- schleifmitteln durch einstellung der brenntemperatur von cercarbonat

Info

Publication number
ATE425234T1
ATE425234T1 AT04747955T AT04747955T ATE425234T1 AT E425234 T1 ATE425234 T1 AT E425234T1 AT 04747955 T AT04747955 T AT 04747955T AT 04747955 T AT04747955 T AT 04747955T AT E425234 T1 ATE425234 T1 AT E425234T1
Authority
AT
Austria
Prior art keywords
producing
firing temperature
ceriocarbonate
ceroxide
abrasives
Prior art date
Application number
AT04747955T
Other languages
English (en)
Inventor
Hiroshi Mizukami
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Application granted granted Critical
Publication of ATE425234T1 publication Critical patent/ATE425234T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/20Compounds containing only rare earth metals as the metal element
    • C01F17/206Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224Oxides or hydroxides of lanthanides
    • C01F17/235Cerium oxides or hydroxides
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/10Particle morphology extending in one dimension, e.g. needle-like
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
AT04747955T 2003-07-17 2004-07-20 Verfahren zur herstellung von ceroxid- schleifmitteln durch einstellung der brenntemperatur von cercarbonat ATE425234T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003198726 2003-07-17

Publications (1)

Publication Number Publication Date
ATE425234T1 true ATE425234T1 (de) 2009-03-15

Family

ID=35476689

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04747955T ATE425234T1 (de) 2003-07-17 2004-07-20 Verfahren zur herstellung von ceroxid- schleifmitteln durch einstellung der brenntemperatur von cercarbonat

Country Status (8)

Country Link
US (1) US20060120930A1 (de)
EP (1) EP1646700B1 (de)
KR (1) KR100637746B1 (de)
CN (1) CN1701109A (de)
AT (1) ATE425234T1 (de)
DE (1) DE602004019925D1 (de)
TW (1) TWI332981B (de)
WO (1) WO2005007769A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6863825B2 (en) 2003-01-29 2005-03-08 Union Oil Company Of California Process for removing arsenic from aqueous streams
JP2007231158A (ja) * 2006-03-01 2007-09-13 Mitsui Mining & Smelting Co Ltd セリウム系研摩材
US8066874B2 (en) 2006-12-28 2011-11-29 Molycorp Minerals, Llc Apparatus for treating a flow of an aqueous solution containing arsenic
US8349764B2 (en) 2007-10-31 2013-01-08 Molycorp Minerals, Llc Composition for treating a fluid
US8252087B2 (en) 2007-10-31 2012-08-28 Molycorp Minerals, Llc Process and apparatus for treating a gas containing a contaminant
KR100922922B1 (ko) 2007-12-28 2009-10-22 주식회사 동부하이텍 이미지센서 및 그 제조방법
KR100922921B1 (ko) 2007-12-28 2009-10-22 주식회사 동부하이텍 이미지센서 및 그 제조방법
US9233863B2 (en) 2011-04-13 2016-01-12 Molycorp Minerals, Llc Rare earth removal of hydrated and hydroxyl species
DE102012018489A1 (de) 2012-09-17 2014-03-20 GM Global Technology Operations, LLC (n.d. Ges. d. Staates Delaware) Kraftfahrzeug-Klappenanordnung
MX370462B (es) 2014-03-07 2019-12-13 Secure Natural Resources Llc Oxido de cerio (iv) con propiedades de remocion de arsenico excepcionales.
CN104017500A (zh) * 2014-06-11 2014-09-03 泰安麦丰新材料科技有限公司 一种稀土抛光粉的制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1610367B1 (de) * 1996-09-30 2010-03-17 Hitachi Chemical Co., Ltd. Schleifmittel auf Basis von Ceroxid und Verfahren zum Polieren von Oberflächen
TW365563B (en) * 1997-04-28 1999-08-01 Seimi Chem Kk Polishing agent for semiconductor and method for its production
JPH1112561A (ja) * 1997-04-28 1999-01-19 Seimi Chem Co Ltd 半導体用研磨剤および半導体用研磨剤の製造方法
KR100475976B1 (ko) * 1998-12-25 2005-03-15 히다치 가세고교 가부시끼가이샤 Cmp 연마제, cmp 연마제용 첨가액 및 기판의 연마방법
US6615499B1 (en) * 1999-05-28 2003-09-09 Hitachi Chemical Co., Ltd. Method for producing cerium oxide, cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device
US6602111B1 (en) * 1999-07-16 2003-08-05 Seimi Chemical Co., Ltd. Abrasive
JP2001089748A (ja) * 1999-07-16 2001-04-03 Seimi Chem Co Ltd 研磨剤
MY126099A (en) * 2000-09-20 2006-09-29 Mitsui Mining & Smelting Co Cerium-based abrasive, method of examining quality thereof, and method of producing the same
JP4064636B2 (ja) * 2001-02-07 2008-03-19 三井金属鉱業株式会社 セリウム系研摩材粒子及びその製造方法
JP4070180B2 (ja) * 2001-05-01 2008-04-02 三井金属鉱業株式会社 セリウム系研摩材の製造方法
JP4033440B2 (ja) * 2001-09-17 2008-01-16 三井金属鉱業株式会社 セリウム系研摩材スラリー及びセリウム系研摩材スラリーの製造方法
DE10251029A1 (de) * 2002-11-02 2004-05-19 Degussa Ag Pyrogen hergestelltes Ceroxid

Also Published As

Publication number Publication date
DE602004019925D1 (de) 2009-04-23
TWI332981B (en) 2010-11-11
KR100637746B1 (ko) 2006-10-24
EP1646700B1 (de) 2009-03-11
US20060120930A1 (en) 2006-06-08
EP1646700A1 (de) 2006-04-19
TW200508377A (en) 2005-03-01
CN1701109A (zh) 2005-11-23
WO2005007769A1 (en) 2005-01-27
KR20050074445A (ko) 2005-07-18

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