ATE424052T1 - Halbleiterlaservorrichtung - Google Patents

Halbleiterlaservorrichtung

Info

Publication number
ATE424052T1
ATE424052T1 AT06015927T AT06015927T ATE424052T1 AT E424052 T1 ATE424052 T1 AT E424052T1 AT 06015927 T AT06015927 T AT 06015927T AT 06015927 T AT06015927 T AT 06015927T AT E424052 T1 ATE424052 T1 AT E424052T1
Authority
AT
Austria
Prior art keywords
laser device
semiconductor laser
dielectric layer
end surface
dielectric
Prior art date
Application number
AT06015927T
Other languages
English (en)
Inventor
Masanao Ochiai
Koji Yuasa
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Application granted granted Critical
Publication of ATE424052T1 publication Critical patent/ATE424052T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AT06015927T 2005-07-29 2006-07-31 Halbleiterlaservorrichtung ATE424052T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005221338 2005-07-29

Publications (1)

Publication Number Publication Date
ATE424052T1 true ATE424052T1 (de) 2009-03-15

Family

ID=37192397

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06015927T ATE424052T1 (de) 2005-07-29 2006-07-31 Halbleiterlaservorrichtung

Country Status (6)

Country Link
US (1) US7738524B2 (de)
EP (2) EP2048752B1 (de)
KR (1) KR101368058B1 (de)
CN (1) CN100449888C (de)
AT (1) ATE424052T1 (de)
DE (1) DE602006005293D1 (de)

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US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
EP1906461B1 (de) * 2006-09-26 2020-03-18 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102006054069A1 (de) * 2006-09-26 2008-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
US7813400B2 (en) * 2006-11-15 2010-10-12 Cree, Inc. Group-III nitride based laser diode and method for fabricating same
US8045595B2 (en) * 2006-11-15 2011-10-25 Cree, Inc. Self aligned diode fabrication method and self aligned laser diode
US7773650B2 (en) * 2006-12-28 2010-08-10 Nichia Corporation Nitride semiconductor laser element
US7646798B2 (en) * 2006-12-28 2010-01-12 Nichia Corporation Nitride semiconductor laser element
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US7668218B2 (en) * 2007-02-20 2010-02-23 Nichia Corporation Nitride semiconductor laser element
US7764722B2 (en) * 2007-02-26 2010-07-27 Nichia Corporation Nitride semiconductor laser element
JP5041883B2 (ja) * 2007-06-07 2012-10-03 昭和電工株式会社 Ｉｉｉ族窒化物半導体層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法
US7804872B2 (en) * 2007-06-07 2010-09-28 Nichia Corporation Nitride semiconductor laser element
US7701995B2 (en) * 2007-07-06 2010-04-20 Nichia Corporation Nitride semiconductor laser element
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
JP5183516B2 (ja) * 2008-02-15 2013-04-17 三洋電機株式会社 半導体レーザ素子
JP5218117B2 (ja) * 2008-03-18 2013-06-26 三菱電機株式会社 窒化物半導体積層構造及び光半導体装置並びにその製造方法
JP5169972B2 (ja) * 2008-09-24 2013-03-27 三菱電機株式会社 窒化物半導体装置の製造方法
JP2010109144A (ja) * 2008-10-30 2010-05-13 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法
US20100327300A1 (en) * 2009-06-25 2010-12-30 Koninklijke Philips Electronics N.V. Contact for a semiconductor light emitting device
JP2011151074A (ja) * 2010-01-19 2011-08-04 Mitsubishi Electric Corp 窒化物半導体装置の製造方法
KR100999798B1 (ko) * 2010-02-11 2010-12-08 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP5707772B2 (ja) 2010-08-06 2015-04-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP2012109499A (ja) * 2010-11-19 2012-06-07 Sony Corp 半導体レーザ素子およびその製造方法
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
DE102015116712B4 (de) 2015-10-01 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement
CN113422289B (zh) * 2021-05-21 2022-07-08 湖北光安伦芯片有限公司 通信激光器半导体芯片及其制作方法
CN115915817A (zh) * 2021-09-30 2023-04-04 Tcl科技集团股份有限公司 发光器件及其制备方法、显示装置
EP4195427B1 (de) * 2021-12-07 2025-04-30 Nichia Corporation Nitridhalbleiterlaserelement

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JP2591099B2 (ja) * 1988-09-29 1997-03-19 旭硝子株式会社 レーザ共振型光ピックアップ
JPH06104526A (ja) * 1992-09-22 1994-04-15 Hitachi Ltd 光素子および光電子装置
US5497389A (en) * 1993-06-25 1996-03-05 The Furukawa Electric Co., Ltd. Semiconductor laser device having an active layer and a resonator having a single reflector or pair of reflectors
JP3601893B2 (ja) 1995-12-12 2004-12-15 シャープ株式会社 半導体レーザ装置
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP2980052B2 (ja) * 1997-03-31 1999-11-22 日本電気株式会社 半導体装置の製造方法
US6396864B1 (en) * 1998-03-13 2002-05-28 Jds Uniphase Corporation Thermally conductive coatings for light emitting devices
JP2001119096A (ja) * 1999-10-18 2001-04-27 Fuji Photo Film Co Ltd 半導体レーザー装置
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US6618409B1 (en) 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets
JP4977931B2 (ja) 2001-03-06 2012-07-18 ソニー株式会社 ＧａＮ系半導体レーザの製造方法
US6977953B2 (en) * 2001-07-27 2005-12-20 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device and method of fabricating the same
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JP2003078199A (ja) * 2001-09-03 2003-03-14 Fuji Photo Film Co Ltd 半導体レーザ装置
JP3770386B2 (ja) * 2002-03-29 2006-04-26 ユーディナデバイス株式会社 光半導体装置及びその製造方法
US7065116B2 (en) * 2003-11-25 2006-06-20 Sharp Kabushiki Kaisha Semiconductor laser element and manufacturing method for the same

Also Published As

Publication number Publication date
EP2048752A3 (de) 2009-05-27
US20070025231A1 (en) 2007-02-01
EP1748524A1 (de) 2007-01-31
US7738524B2 (en) 2010-06-15
EP2048752A2 (de) 2009-04-15
CN1929218A (zh) 2007-03-14
KR101368058B1 (ko) 2014-02-26
KR20070015062A (ko) 2007-02-01
DE602006005293D1 (de) 2009-04-09
EP1748524B1 (de) 2009-02-25
CN100449888C (zh) 2009-01-07
EP2048752B1 (de) 2012-01-04

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