ATE401667T1 - Verfahren zum herstellen eines transistors mit selbst justierten doppel-gates durch schrumpfung der gatestruktur - Google Patents

Verfahren zum herstellen eines transistors mit selbst justierten doppel-gates durch schrumpfung der gatestruktur

Info

Publication number
ATE401667T1
ATE401667T1 AT06124271T AT06124271T ATE401667T1 AT E401667 T1 ATE401667 T1 AT E401667T1 AT 06124271 T AT06124271 T AT 06124271T AT 06124271 T AT06124271 T AT 06124271T AT E401667 T1 ATE401667 T1 AT E401667T1
Authority
AT
Austria
Prior art keywords
layer
grid
stack
zone
motif
Prior art date
Application number
AT06124271T
Other languages
English (en)
Inventor
Christophe Licitra
Maud Vinet
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE401667T1 publication Critical patent/ATE401667T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Thin Film Transistor (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
AT06124271T 2005-11-18 2006-11-17 Verfahren zum herstellen eines transistors mit selbst justierten doppel-gates durch schrumpfung der gatestruktur ATE401667T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0553510A FR2893762B1 (fr) 2005-11-18 2005-11-18 Procede de realisation de transistor a double grilles auto-alignees par reduction de motifs de grille

Publications (1)

Publication Number Publication Date
ATE401667T1 true ATE401667T1 (de) 2008-08-15

Family

ID=36608627

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06124271T ATE401667T1 (de) 2005-11-18 2006-11-17 Verfahren zum herstellen eines transistors mit selbst justierten doppel-gates durch schrumpfung der gatestruktur

Country Status (5)

Country Link
US (1) US20090079004A1 (de)
EP (2) EP1788635B1 (de)
AT (1) ATE401667T1 (de)
DE (1) DE602006001828D1 (de)
FR (1) FR2893762B1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2911004B1 (fr) * 2006-12-28 2009-05-15 Commissariat Energie Atomique Procede de realisation de transistors a double-grille asymetriques permettant la realisation de transistors a double-grille asymetriques et symetriques sur un meme substrat
US7671418B2 (en) * 2007-09-14 2010-03-02 Advanced Micro Devices, Inc. Double layer stress for multiple gate transistors
FR2937463B1 (fr) * 2008-10-17 2010-12-24 Commissariat Energie Atomique Procede de fabrication de composants empiles et auto-alignes sur un substrat
FR2947384B1 (fr) 2009-06-25 2012-03-30 Commissariat Energie Atomique Procede de realisation d'un transistor a source et drain metalliques
FR2970813B1 (fr) * 2011-01-24 2013-09-27 Commissariat Energie Atomique Dispositif a effet de champ muni d'une zone barrière de diffusion de dopants localisée et procédé de réalisation
US9343589B2 (en) * 2014-01-22 2016-05-17 Globalfoundries Inc. Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures
FR3064398B1 (fr) * 2017-03-21 2019-06-07 Soitec Structure de type semi-conducteur sur isolant, notamment pour un capteur d'image de type face avant, et procede de fabrication d'une telle structure
CN112490289B (zh) * 2020-11-22 2022-08-19 复旦大学 基于自对准结构的叠层沟道纳米片晶体管及其制备方法
CN113394127B (zh) * 2021-06-16 2022-04-19 长江存储科技有限责任公司 3d存储器桥接结构的关键尺寸的监测方法
CN115497817B (zh) * 2021-06-17 2026-01-27 联华电子股份有限公司 半导体结构及其形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5814537A (en) * 1996-12-18 1998-09-29 Sharp Microelectronics Technology,Inc. Method of forming transistor electrodes from directionally deposited silicide
US6277679B1 (en) * 1998-11-25 2001-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing thin film transistor
US6531713B1 (en) * 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
US6365465B1 (en) * 1999-03-19 2002-04-02 International Business Machines Corporation Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques
DE19924571C2 (de) * 1999-05-28 2001-03-15 Siemens Ag Verfahren zur Herstellung eines Doppel-Gate-MOSFET-Transistors
US6320236B1 (en) * 1999-10-06 2001-11-20 Advanced Micro Devices, Inc. Optimization of logic gates with criss-cross implants to form asymmetric channel regions
US20020090758A1 (en) * 2000-09-19 2002-07-11 Silicon Genesis Corporation Method and resulting device for manufacturing for double gated transistors
US6596597B2 (en) * 2001-06-12 2003-07-22 International Business Machines Corporation Method of manufacturing dual gate logic devices
DE10208881B4 (de) * 2002-03-01 2007-06-28 Forschungszentrum Jülich GmbH Selbstjustierendes Verfahren zur Herstellung eines Doppel-Gate MOSFET sowie durch dieses Verfahren hergestellter Doppel-Gate MOSFET
FR2838238B1 (fr) * 2002-04-08 2005-04-15 St Microelectronics Sa Dispositif semiconducteur a grille enveloppante encapsule dans un milieu isolant
US6905976B2 (en) * 2003-05-06 2005-06-14 International Business Machines Corporation Structure and method of forming a notched gate field effect transistor
US20050006640A1 (en) * 2003-06-26 2005-01-13 Jackson Warren B. Polymer-based memory element
US7518195B2 (en) * 2004-10-21 2009-04-14 Commissariat A L'energie Atomique Field-effect microelectronic device, capable of forming one or several transistor channels
US20070228480A1 (en) * 2006-04-03 2007-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS device having PMOS and NMOS transistors with different gate structures

Also Published As

Publication number Publication date
EP1788635A1 (de) 2007-05-23
FR2893762B1 (fr) 2007-12-21
EP1788635B1 (de) 2008-07-16
US20090079004A1 (en) 2009-03-26
FR2893762A1 (fr) 2007-05-25
EP1881533A2 (de) 2008-01-23
EP1881533A3 (de) 2008-02-20
DE602006001828D1 (de) 2008-08-28

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Legal Events

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