ATE385038T1 - Hintere feldemissionsplatte - Google Patents

Hintere feldemissionsplatte

Info

Publication number
ATE385038T1
ATE385038T1 AT02751413T AT02751413T ATE385038T1 AT E385038 T1 ATE385038 T1 AT E385038T1 AT 02751413 T AT02751413 T AT 02751413T AT 02751413 T AT02751413 T AT 02751413T AT E385038 T1 ATE385038 T1 AT E385038T1
Authority
AT
Austria
Prior art keywords
field emission
localized
backplate
metal layer
emitter
Prior art date
Application number
AT02751413T
Other languages
English (en)
Inventor
Mervyn John Rose
Ravi Silva
John Shannon
Original Assignee
Univ Dundee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0119657A external-priority patent/GB2378569B/en
Priority claimed from GB0119659A external-priority patent/GB2378570B/en
Application filed by Univ Dundee filed Critical Univ Dundee
Application granted granted Critical
Publication of ATE385038T1 publication Critical patent/ATE385038T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H10P14/2923—
    • H10P14/3411—
    • H10P14/381—
    • H10P14/3816—
    • H10P14/382—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Recrystallisation Techniques (AREA)
  • Gas-Filled Discharge Tubes (AREA)
AT02751413T 2001-08-11 2002-08-09 Hintere feldemissionsplatte ATE385038T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0119657A GB2378569B (en) 2001-08-11 2001-08-11 Improved field emission backplate
GB0119659A GB2378570B (en) 2001-08-11 2001-08-11 Improved field emission backplate

Publications (1)

Publication Number Publication Date
ATE385038T1 true ATE385038T1 (de) 2008-02-15

Family

ID=26246435

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02751413T ATE385038T1 (de) 2001-08-11 2002-08-09 Hintere feldemissionsplatte

Country Status (8)

Country Link
US (1) US7592191B2 (de)
EP (1) EP1417695B1 (de)
JP (1) JP4532108B2 (de)
KR (1) KR100730808B1 (de)
CN (1) CN1639820B (de)
AT (1) ATE385038T1 (de)
DE (1) DE60224808T2 (de)
WO (1) WO2003015117A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE385038T1 (de) * 2001-08-11 2008-02-15 Univ Dundee Hintere feldemissionsplatte
US7015496B2 (en) * 2002-12-27 2006-03-21 Semiconductor Energy Laboratory Co., Ltd. Field emission device and manufacturing method thereof
US7674149B2 (en) * 2005-04-21 2010-03-09 Industrial Technology Research Institute Method for fabricating field emitters by using laser-induced re-crystallization
KR100787630B1 (ko) * 2006-05-24 2007-12-21 경희대학교 산학협력단 표시 소자 및 그 제조 방법
TW200816266A (en) * 2006-09-22 2008-04-01 Innolux Display Corp Field emission display and method of fabricating the same
CN101381492B (zh) * 2007-09-06 2011-07-06 比亚迪股份有限公司 一种复合聚丙烯材料及其制备方法
GB0722120D0 (en) * 2007-11-10 2007-12-19 Quantum Filament Technologies Improved field emission backplate
KR101610260B1 (ko) * 2008-12-15 2016-04-08 삼성전자주식회사 전자빔 어닐링 장치 및 이를 이용한 어닐링 방법
CN106744659B (zh) * 2016-12-13 2018-09-07 杭州电子科技大学 基于激光控制纳米结构硅基表面形态的研究方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68913419T2 (de) 1988-03-25 1994-06-01 Thomson Csf Herstellungsverfahren von feldemissions-elektronenquellen und anwendung zur herstellung von emitter-matrizen.
JPH01290598A (ja) 1988-05-17 1989-11-22 Res Dev Corp Of Japan 微細マルチプローブの製造方法
JPH05274998A (ja) * 1992-03-23 1993-10-22 Shimadzu Corp 電子放出素子
US5329207A (en) * 1992-05-13 1994-07-12 Micron Technology, Inc. Field emission structures produced on macro-grain polysilicon substrates
JP3267418B2 (ja) 1993-06-25 2002-03-18 双葉電子工業株式会社 電界放出カソード素子
US5804919A (en) * 1994-07-20 1998-09-08 University Of Georgia Research Foundation, Inc. Resonant microcavity display
JP3239285B2 (ja) 1993-11-22 2001-12-17 双葉電子工業株式会社 電界放出カソードの製造方法
RU2074444C1 (ru) 1994-07-26 1997-02-27 Евгений Инвиевич Гиваргизов Матричный автоэлектронный катод и электронный прибор для оптического отображения информации
US5804910A (en) * 1996-01-18 1998-09-08 Micron Display Technology, Inc. Field emission displays with low function emitters and method of making low work function emitters
TW472273B (en) * 1999-04-23 2002-01-11 Matsushita Electric Works Ltd Field emission-type electron source and manufacturing method thereof
US6765342B1 (en) * 1999-10-18 2004-07-20 Matsushita Electric Work, Ltd. Field emission-type electron source and manufacturing method thereof
US6451631B1 (en) * 2000-08-10 2002-09-17 Hitachi America, Ltd. Thin film crystal growth by laser annealing
US6572425B2 (en) 2001-03-28 2003-06-03 Intel Corporation Methods for forming microtips in a field emission device
GB2378570B (en) 2001-08-11 2005-11-16 Univ Dundee Improved field emission backplate
GB2378569B (en) 2001-08-11 2006-03-22 Univ Dundee Improved field emission backplate
ATE385038T1 (de) * 2001-08-11 2008-02-15 Univ Dundee Hintere feldemissionsplatte
GB2389959B (en) * 2002-06-19 2006-06-14 Univ Dundee Improved field emission device
US7358165B2 (en) * 2003-07-31 2008-04-15 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and method for manufacturing semiconductor device
US7247527B2 (en) * 2003-07-31 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and laser irradiation apparatus
EP1537938A3 (de) * 2003-12-02 2009-02-18 Semiconductor Energy Laboratory Co., Ltd. Laserbestrahlungsvorrichtung, Laserbestrahlungsverfahren und Verfahren zur Herstellung eines Halbleiterbauelements
EP1553643A3 (de) * 2003-12-26 2009-01-21 Sel Semiconductor Energy Laboratory Co., Ltd. Laserbestrahlungsmethode une Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht
JP2007078350A (ja) 2004-02-17 2007-03-29 Masao Yoshida キズ検査用基準ゲージの製造方法
US7902002B2 (en) * 2004-07-30 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7674149B2 (en) * 2005-04-21 2010-03-09 Industrial Technology Research Institute Method for fabricating field emitters by using laser-induced re-crystallization
DE602006004913D1 (de) * 2005-04-28 2009-03-12 Semiconductor Energy Lab Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
KR101419869B1 (ko) * 2006-05-31 2014-07-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
CN101479777B (zh) * 2006-05-31 2011-07-06 株式会社半导体能源研究所 显示设备和电子装置
TWI412079B (zh) * 2006-07-28 2013-10-11 半導體能源研究所股份有限公司 製造顯示裝置的方法
WO2008023630A1 (en) * 2006-08-24 2008-02-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TW200816266A (en) * 2006-09-22 2008-04-01 Innolux Display Corp Field emission display and method of fabricating the same
WO2008069219A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Antireflective film and display device

Also Published As

Publication number Publication date
EP1417695B1 (de) 2008-01-23
DE60224808D1 (de) 2008-03-13
KR100730808B1 (ko) 2007-06-20
WO2003015117A1 (en) 2003-02-20
EP1417695A1 (de) 2004-05-12
CN1639820B (zh) 2010-05-26
KR20040030956A (ko) 2004-04-09
HK1077919A1 (zh) 2006-02-24
US7592191B2 (en) 2009-09-22
US20040197942A1 (en) 2004-10-07
JP4532108B2 (ja) 2010-08-25
JP2005505101A (ja) 2005-02-17
DE60224808T2 (de) 2009-02-05
CN1639820A (zh) 2005-07-13

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties