GB2378570B - Improved field emission backplate - Google Patents

Improved field emission backplate

Info

Publication number
GB2378570B
GB2378570B GB0119659A GB0119659A GB2378570B GB 2378570 B GB2378570 B GB 2378570B GB 0119659 A GB0119659 A GB 0119659A GB 0119659 A GB0119659 A GB 0119659A GB 2378570 B GB2378570 B GB 2378570B
Authority
GB
United Kingdom
Prior art keywords
field emission
improved field
emission backplate
backplate
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0119659A
Other versions
GB0119659D0 (en
GB2378570A (en
Inventor
Mervyn John Rose
Ravi Silva
John Shannon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Dundee
Original Assignee
University of Dundee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Dundee filed Critical University of Dundee
Priority to GB0119659A priority Critical patent/GB2378570B/en
Publication of GB0119659D0 publication Critical patent/GB0119659D0/en
Priority to CN028157605A priority patent/CN1639820B/en
Priority to DE60224808T priority patent/DE60224808T2/en
Priority to EP02751413A priority patent/EP1417695B1/en
Priority to AT02751413T priority patent/ATE385038T1/en
Priority to JP2003519955A priority patent/JP4532108B2/en
Priority to KR1020047002038A priority patent/KR100730808B1/en
Priority to PCT/GB2002/003691 priority patent/WO2003015117A1/en
Publication of GB2378570A publication Critical patent/GB2378570A/en
Priority to US10/773,696 priority patent/US7592191B2/en
Application granted granted Critical
Publication of GB2378570B publication Critical patent/GB2378570B/en
Priority to HK06100341.0A priority patent/HK1077919A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
GB0119659A 2001-08-11 2001-08-11 Improved field emission backplate Expired - Lifetime GB2378570B (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
GB0119659A GB2378570B (en) 2001-08-11 2001-08-11 Improved field emission backplate
DE60224808T DE60224808T2 (en) 2001-08-11 2002-08-09 REAR FIELD EMISSION PLATE
CN028157605A CN1639820B (en) 2001-08-11 2002-08-09 Field emission backplate
EP02751413A EP1417695B1 (en) 2001-08-11 2002-08-09 Field emission backplate
AT02751413T ATE385038T1 (en) 2001-08-11 2002-08-09 REAR FIELD EMISSION PLATE
JP2003519955A JP4532108B2 (en) 2001-08-11 2002-08-09 Field emission back plate, field emission device using the field emission back plate, and method for manufacturing the field emission back plate
KR1020047002038A KR100730808B1 (en) 2001-08-11 2002-08-09 Field emission backplate, method of forming the backplate, and field emission device
PCT/GB2002/003691 WO2003015117A1 (en) 2001-08-11 2002-08-09 Field emission backplate
US10/773,696 US7592191B2 (en) 2001-08-11 2004-02-06 Field emission backplate
HK06100341.0A HK1077919A1 (en) 2001-08-11 2006-01-09 Field emission backplate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0119659A GB2378570B (en) 2001-08-11 2001-08-11 Improved field emission backplate

Publications (3)

Publication Number Publication Date
GB0119659D0 GB0119659D0 (en) 2001-10-03
GB2378570A GB2378570A (en) 2003-02-12
GB2378570B true GB2378570B (en) 2005-11-16

Family

ID=9920255

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0119659A Expired - Lifetime GB2378570B (en) 2001-08-11 2001-08-11 Improved field emission backplate

Country Status (1)

Country Link
GB (1) GB2378570B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4532108B2 (en) 2001-08-11 2010-08-25 ザ・ユニバーシティ・コート・オブ・ザ・ユニバーシティ・オブ・ダンディ Field emission back plate, field emission device using the field emission back plate, and method for manufacturing the field emission back plate
GB2440783A (en) * 2006-08-07 2008-02-13 Quantum Filament Technologies Improved field emission backplate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0578428A1 (en) * 1992-07-02 1994-01-12 Xerox Corporation Method for making a field emission structure
JPH07141984A (en) * 1993-11-22 1995-06-02 Futaba Corp Manufacture of field emission cathode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0578428A1 (en) * 1992-07-02 1994-01-12 Xerox Corporation Method for making a field emission structure
JPH07141984A (en) * 1993-11-22 1995-06-02 Futaba Corp Manufacture of field emission cathode

Also Published As

Publication number Publication date
GB0119659D0 (en) 2001-10-03
GB2378570A (en) 2003-02-12

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Legal Events

Date Code Title Description
S73 Revocation on comptroller's initiative (section 73/patents act 1977)

Free format text: PATENT REVOKED; PATENT REVOKED UNDER SECTION 73(2) ON 8 JANUARY 2010