ATE377636T1 - Polierverfahren für ein wolframhaltiges substrat - Google Patents
Polierverfahren für ein wolframhaltiges substratInfo
- Publication number
- ATE377636T1 ATE377636T1 AT05760404T AT05760404T ATE377636T1 AT E377636 T1 ATE377636 T1 AT E377636T1 AT 05760404 T AT05760404 T AT 05760404T AT 05760404 T AT05760404 T AT 05760404T AT E377636 T1 ATE377636 T1 AT E377636T1
- Authority
- AT
- Austria
- Prior art keywords
- tungsten
- polishing
- polishing process
- substrate containing
- containing tungsten
- Prior art date
Links
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title abstract 6
- 229910052721 tungsten Inorganic materials 0.000 title abstract 6
- 239000010937 tungsten Substances 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 title abstract 3
- 238000007517 polishing process Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 abstract 4
- 239000003112 inhibitor Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229920001577 copolymer Polymers 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 125000000623 heterocyclic group Chemical group 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 229920002959 polymer blend Polymers 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/869,397 US7247567B2 (en) | 2004-06-16 | 2004-06-16 | Method of polishing a tungsten-containing substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE377636T1 true ATE377636T1 (de) | 2007-11-15 |
Family
ID=34972526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05760404T ATE377636T1 (de) | 2004-06-16 | 2005-06-10 | Polierverfahren für ein wolframhaltiges substrat |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US7247567B2 (de) |
| EP (1) | EP1773959B1 (de) |
| JP (1) | JP4790707B2 (de) |
| KR (1) | KR100973397B1 (de) |
| CN (1) | CN100532484C (de) |
| AT (1) | ATE377636T1 (de) |
| DE (1) | DE602005003235T2 (de) |
| ES (1) | ES2293591T3 (de) |
| IL (1) | IL179571A (de) |
| MY (1) | MY137631A (de) |
| TW (1) | TWI275448B (de) |
| WO (1) | WO2006009641A1 (de) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7582127B2 (en) * | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
| JP5026665B2 (ja) * | 2004-10-15 | 2012-09-12 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
| US7504044B2 (en) * | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
| US7311856B2 (en) | 2005-03-30 | 2007-12-25 | Cabot Microelectronics Corporation | Polymeric inhibitors for enhanced planarization |
| KR101091501B1 (ko) * | 2006-03-31 | 2011-12-08 | 캐보트 마이크로일렉트로닉스 코포레이션 | 평탄화 증대를 위한 중합체성 억제제 |
| US20080020680A1 (en) * | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
| US8053287B2 (en) * | 2006-09-29 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making multi-step photodiode junction structure for backside illuminated sensor |
| KR101279968B1 (ko) | 2008-12-31 | 2013-07-17 | 제일모직주식회사 | Ｃｍｐ 슬러리 조성물 |
| JP5813921B2 (ja) * | 2009-04-02 | 2015-11-17 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| JP5813922B2 (ja) * | 2009-04-02 | 2015-11-17 | Jsr株式会社 | 化学機械研磨用水系分散体および化学機械研磨方法 |
| US8480920B2 (en) * | 2009-04-02 | 2013-07-09 | Jsr Corporation | Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method |
| JP2010258418A (ja) * | 2009-04-02 | 2010-11-11 | Jsr Corp | 化学機械研磨用水系分散体調製用キットおよび化学機械研磨用水系分散体の調製方法 |
| WO2011072188A2 (en) * | 2009-12-11 | 2011-06-16 | Advanced Technology Materials, Inc. | Removal of masking material |
| JP5518523B2 (ja) * | 2010-02-25 | 2014-06-11 | 富士フイルム株式会社 | 化学的機械的研磨液及び研磨方法 |
| KR101335946B1 (ko) * | 2011-08-16 | 2013-12-04 | 유비머트리얼즈주식회사 | 텅스텐 연마용 ｃｍｐ 슬러리 조성물 |
| KR20150008442A (ko) * | 2012-05-07 | 2015-01-22 | 바스프 에스이 | 반도체 소자의 제조 방법 |
| KR101409889B1 (ko) | 2013-12-27 | 2014-06-19 | 유비머트리얼즈주식회사 | 연마 슬러리 및 이를 이용한 기판 연마 방법 |
| US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9238754B2 (en) | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9303189B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
| US9127187B1 (en) | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| KR102375342B1 (ko) | 2014-05-13 | 2022-03-16 | 바스프 에스이 | Tin 풀-백 및 클리닝 조성물 |
| US10570313B2 (en) | 2015-02-12 | 2020-02-25 | Versum Materials Us, Llc | Dishing reducing in tungsten chemical mechanical polishing |
| US9758697B2 (en) * | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
| KR101731523B1 (ko) | 2015-04-22 | 2017-04-28 | 제이에스알 가부시끼가이샤 | 화학 기계 연마용 처리 조성물, 화학 기계 연마 방법 및 세정 방법 |
| JP2017061612A (ja) * | 2015-09-25 | 2017-03-30 | Jsr株式会社 | 化学機械研磨用組成物および化学機械研磨方法 |
| JP6112329B1 (ja) * | 2016-05-10 | 2017-04-12 | Jsr株式会社 | 半導体洗浄用組成物および洗浄方法 |
| KR20180061952A (ko) * | 2016-11-30 | 2018-06-08 | 주식회사 케이씨텍 | 텅스텐 연마용 슬러리 조성물 |
| US9984895B1 (en) * | 2017-01-31 | 2018-05-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| CN108080236B (zh) * | 2017-11-30 | 2021-12-21 | 蚌埠青果科技服务有限公司 | 一种提升脱硫除尘器外壳耐腐蚀性能的方法 |
| JP6962247B2 (ja) * | 2018-03-14 | 2021-11-05 | Jsr株式会社 | 半導体表面処理用組成物および半導体表面処理方法 |
| US10815392B2 (en) | 2018-05-03 | 2020-10-27 | Rohm and Haas Electronic CMP Holdings, Inc. | Chemical mechanical polishing method for tungsten |
| US10640681B1 (en) | 2018-10-20 | 2020-05-05 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
| US10597558B1 (en) | 2018-10-20 | 2020-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and method for tungsten |
| CN113122140B (zh) * | 2019-12-30 | 2024-05-03 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| CN113122141B (zh) * | 2019-12-30 | 2024-08-02 | 安集微电子科技（上海）股份有限公司 | 一种化学机械抛光液 |
| JP7517465B2 (ja) * | 2021-04-20 | 2024-07-17 | 株式会社レゾナック | Ｃｍｐ研磨液及び研磨方法 |
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| CA2378492A1 (en) | 1999-07-07 | 2001-01-18 | Cabot Microelectronics Corporation | Cmp composition containing silane modified abrasive particles |
| US7118685B1 (en) * | 1999-07-13 | 2006-10-10 | Kao Corporation | Polishing liquid composition |
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| CA2398425A1 (en) | 2001-09-04 | 2003-03-04 | Rohm And Haas Company | Process for inhibiting metallic corrosion in aqueous systems |
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| US7004819B2 (en) | 2002-01-18 | 2006-02-28 | Cabot Microelectronics Corporation | CMP systems and methods utilizing amine-containing polymers |
| US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| EP1478708A1 (de) | 2002-02-26 | 2004-11-24 | Applied Materials, Inc. | Verfahren und zusammensetzung zum polieren eines substrats |
| US20050079803A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Chemical-mechanical planarization composition having PVNO and associated method for use |
| US20050211950A1 (en) * | 2004-03-24 | 2005-09-29 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
-
2004
- 2004-06-16 US US10/869,397 patent/US7247567B2/en active Active
-
2005
- 2005-06-10 DE DE602005003235T patent/DE602005003235T2/de active Active
- 2005-06-10 CN CNB2005800198420A patent/CN100532484C/zh active Active
- 2005-06-10 JP JP2007516583A patent/JP4790707B2/ja active Active
- 2005-06-10 KR KR1020077000945A patent/KR100973397B1/ko active IP Right Grant
- 2005-06-10 AT AT05760404T patent/ATE377636T1/de active
- 2005-06-10 EP EP05760404A patent/EP1773959B1/de active Active
- 2005-06-10 WO PCT/US2005/020615 patent/WO2006009641A1/en active IP Right Grant
- 2005-06-10 ES ES05760404T patent/ES2293591T3/es active Active
- 2005-06-13 TW TW094119438A patent/TWI275448B/zh active
- 2005-06-14 MY MYPI20052696A patent/MY137631A/en unknown
-
2006
- 2006-11-23 IL IL179571A patent/IL179571A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2006009641A1 (en) | 2006-01-26 |
| CN1969024A (zh) | 2007-05-23 |
| KR20070033429A (ko) | 2007-03-26 |
| IL179571A (en) | 2011-03-31 |
| ES2293591T3 (es) | 2008-03-16 |
| JP2008503875A (ja) | 2008-02-07 |
| TW200607603A (en) | 2006-03-01 |
| CN100532484C (zh) | 2009-08-26 |
| MY137631A (en) | 2009-02-27 |
| DE602005003235D1 (de) | 2007-12-20 |
| EP1773959B1 (de) | 2007-11-07 |
| TWI275448B (en) | 2007-03-11 |
| US7247567B2 (en) | 2007-07-24 |
| IL179571A0 (en) | 2007-05-15 |
| DE602005003235T2 (de) | 2008-08-28 |
| JP4790707B2 (ja) | 2011-10-12 |
| EP1773959A1 (de) | 2007-04-18 |
| US20050282391A1 (en) | 2005-12-22 |
| KR100973397B1 (ko) | 2010-07-30 |
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| Date | Code | Title | Description |
|---|---|---|---|
| UEP | Publication of translation of european patent specification |
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