ATE361529T1 - Verfahren und einrichtung zur durchführung einer aktiven feldkompensation während der programmierung eines magnetoresistiven speicherbausteins - Google Patents

Verfahren und einrichtung zur durchführung einer aktiven feldkompensation während der programmierung eines magnetoresistiven speicherbausteins

Info

Publication number
ATE361529T1
ATE361529T1 AT04799181T AT04799181T ATE361529T1 AT E361529 T1 ATE361529 T1 AT E361529T1 AT 04799181 T AT04799181 T AT 04799181T AT 04799181 T AT04799181 T AT 04799181T AT E361529 T1 ATE361529 T1 AT E361529T1
Authority
AT
Austria
Prior art keywords
magnetorresistive
magnetic field
memory component
during programming
active field
Prior art date
Application number
AT04799181T
Other languages
English (en)
Inventor
Hans M B Boeve
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE361529T1 publication Critical patent/ATE361529T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Measuring Magnetic Variables (AREA)
  • Transceivers (AREA)
AT04799181T 2003-11-24 2004-11-17 Verfahren und einrichtung zur durchführung einer aktiven feldkompensation während der programmierung eines magnetoresistiven speicherbausteins ATE361529T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03104338 2003-11-24

Publications (1)

Publication Number Publication Date
ATE361529T1 true ATE361529T1 (de) 2007-05-15

Family

ID=34610127

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04799181T ATE361529T1 (de) 2003-11-24 2004-11-17 Verfahren und einrichtung zur durchführung einer aktiven feldkompensation während der programmierung eines magnetoresistiven speicherbausteins

Country Status (9)

Country Link
US (1) US7355882B2 (de)
EP (1) EP1692704B1 (de)
JP (1) JP2007513446A (de)
KR (1) KR20060111521A (de)
CN (1) CN1886801B (de)
AT (1) ATE361529T1 (de)
DE (1) DE602004006302T2 (de)
TW (1) TW200539176A (de)
WO (1) WO2005050660A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007040167A1 (ja) * 2005-10-03 2007-04-12 Nec Corporation 磁気ランダムアクセスメモリ
US7483295B2 (en) * 2007-04-23 2009-01-27 Mag Ic Technologies, Inc. MTJ sensor including domain stable free layer
EP2276034B1 (de) 2009-07-13 2016-04-27 Crocus Technology S.A. Selbstbezogene Magnetdirektzugriffsspeicherzelle
US8525709B2 (en) * 2011-09-21 2013-09-03 Qualcomm Incorporated Systems and methods for designing ADC based on probabilistic switching of memories
US8937841B2 (en) * 2012-05-16 2015-01-20 SK Hynix Inc. Driver for semiconductor memory and method thereof
KR20140021781A (ko) * 2012-08-10 2014-02-20 삼성전자주식회사 가변 저항 메모리를 포함하는 반도체 메모리 장치
CN106098093B (zh) * 2016-06-13 2019-06-04 中电海康集团有限公司 一种对多态磁性存储器进行磁场辅助再编程的操作方法
JP2022006539A (ja) * 2020-06-24 2022-01-13 キオクシア株式会社 磁気記憶装置および磁気記憶装置の制御方法
CN112014001B (zh) * 2020-08-24 2022-06-10 歌尔微电子有限公司 微机电系统力学传感器、传感器单体及电子设备
US11621026B2 (en) 2020-12-01 2023-04-04 International Business Machines Corporation Write driver with magnetic field compensation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5289410A (en) * 1992-06-29 1994-02-22 California Institute Of Technology Non-volatile magnetic random access memory
US6097626A (en) * 1999-07-28 2000-08-01 Hewlett-Packard Company MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells
DE10053965A1 (de) * 2000-10-31 2002-06-20 Infineon Technologies Ag Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung
US6999339B2 (en) * 2003-04-22 2006-02-14 Micron Technology, Inc. Integrated circuit including sensor to sense environmental data, method of compensating an MRAM integrated circuit for the effects of an external magnetic field, MRAM integrated circuit, and method of testing
US7088612B2 (en) * 2004-08-20 2006-08-08 Infineon Technologies Ag MRAM with vertical storage element in two layer-arrangement and field sensor

Also Published As

Publication number Publication date
EP1692704B1 (de) 2007-05-02
WO2005050660A1 (en) 2005-06-02
US7355882B2 (en) 2008-04-08
KR20060111521A (ko) 2006-10-27
TW200539176A (en) 2005-12-01
DE602004006302T2 (de) 2007-09-13
EP1692704A1 (de) 2006-08-23
JP2007513446A (ja) 2007-05-24
CN1886801A (zh) 2006-12-27
DE602004006302D1 (de) 2007-06-14
US20070070686A1 (en) 2007-03-29
CN1886801B (zh) 2010-05-26

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