ATE352804T1 - Bandgap-spannungsreferenz mit temperaturkompensation - Google Patents

Bandgap-spannungsreferenz mit temperaturkompensation

Info

Publication number
ATE352804T1
ATE352804T1 AT04001170T AT04001170T ATE352804T1 AT E352804 T1 ATE352804 T1 AT E352804T1 AT 04001170 T AT04001170 T AT 04001170T AT 04001170 T AT04001170 T AT 04001170T AT E352804 T1 ATE352804 T1 AT E352804T1
Authority
AT
Austria
Prior art keywords
vbe
vbc
voltage reference
bandgap voltage
delta
Prior art date
Application number
AT04001170T
Other languages
German (de)
English (en)
Inventor
Yam Lee Chik
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Application granted granted Critical
Publication of ATE352804T1 publication Critical patent/ATE352804T1/de

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
AT04001170T 2003-01-17 2004-01-17 Bandgap-spannungsreferenz mit temperaturkompensation ATE352804T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44106303P 2003-01-17 2003-01-17
US10/713,928 US7164308B2 (en) 2003-01-17 2003-11-14 Temperature compensated bandgap voltage reference

Publications (1)

Publication Number Publication Date
ATE352804T1 true ATE352804T1 (de) 2007-02-15

Family

ID=32600297

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04001170T ATE352804T1 (de) 2003-01-17 2004-01-17 Bandgap-spannungsreferenz mit temperaturkompensation

Country Status (5)

Country Link
US (1) US7164308B2 (enExample)
EP (1) EP1439445B1 (enExample)
JP (1) JP2004227584A (enExample)
AT (1) ATE352804T1 (enExample)
DE (1) DE602004004419T2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777561B2 (en) * 2008-07-30 2010-08-17 Lsi Corporation Robust current mirror with improved input voltage headroom
US8044684B1 (en) 2010-04-15 2011-10-25 Stmicroelectronics Pvt. Ltd. Input and output buffer including a dynamic driver reference generator
US8890187B2 (en) 2010-04-16 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device with an insulating partition
US10120405B2 (en) 2014-04-04 2018-11-06 National Instruments Corporation Single-junction voltage reference
US12061493B2 (en) 2020-09-25 2024-08-13 Intel Corporation Low power hybrid reverse bandgap reference and digital temperature sensor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58221507A (ja) 1982-06-18 1983-12-23 Toshiba Corp トランジスタ回路
US5132556A (en) 1989-11-17 1992-07-21 Samsung Semiconductor, Inc. Bandgap voltage reference using bipolar parasitic transistors and mosfet's in the current source
US5394078A (en) 1993-10-26 1995-02-28 Analog Devices, Inc. Two terminal temperature transducer having circuitry which controls the entire operating current to be linearly proportional with temperature
DE19620181C1 (de) 1996-05-20 1997-09-25 Siemens Ag Bandgap-Referenzspannungsschaltung zur Erzeugung einer temperaturkompensierten Referenzspannung
US5686823A (en) 1996-08-07 1997-11-11 National Semiconductor Corporation Bandgap voltage reference circuit
US6005374A (en) * 1997-04-02 1999-12-21 Telcom Semiconductor, Inc. Low cost programmable low dropout regulator
US6121824A (en) * 1998-12-30 2000-09-19 Ion E. Opris Series resistance compensation in translinear circuits
US6181121B1 (en) * 1999-03-04 2001-01-30 Cypress Semiconductor Corp. Low supply voltage BICMOS self-biased bandgap reference using a current summing architecture
JP4674947B2 (ja) 2000-09-29 2011-04-20 オリンパス株式会社 定電圧出力回路
US6288525B1 (en) * 2000-11-08 2001-09-11 Agere Systems Guardian Corp. Merged NPN and PNP transistor stack for low noise and low supply voltage bandgap

Also Published As

Publication number Publication date
US7164308B2 (en) 2007-01-16
EP1439445A3 (en) 2005-06-08
US20040140844A1 (en) 2004-07-22
EP1439445A2 (en) 2004-07-21
DE602004004419T2 (de) 2007-11-15
JP2004227584A (ja) 2004-08-12
DE602004004419D1 (de) 2007-03-15
EP1439445B1 (en) 2007-01-24

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Legal Events

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