ATE475925T1 - Spannungsreferenz-elektronikschaltung - Google Patents

Spannungsreferenz-elektronikschaltung

Info

Publication number
ATE475925T1
ATE475925T1 AT07820997T AT07820997T ATE475925T1 AT E475925 T1 ATE475925 T1 AT E475925T1 AT 07820997 T AT07820997 T AT 07820997T AT 07820997 T AT07820997 T AT 07820997T AT E475925 T1 ATE475925 T1 AT E475925T1
Authority
AT
Austria
Prior art keywords
voltage
temperature
circuit
current
proportional
Prior art date
Application number
AT07820997T
Other languages
English (en)
Inventor
Thierry Masson
Jean-Francois Debroux
Pierre Coquille
Original Assignee
E2V Semiconductors
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E2V Semiconductors filed Critical E2V Semiconductors
Application granted granted Critical
Publication of ATE475925T1 publication Critical patent/ATE475925T1/de

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
  • Details Of Television Scanning (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Control Of Charge By Means Of Generators (AREA)
AT07820997T 2006-10-06 2007-10-05 Spannungsreferenz-elektronikschaltung ATE475925T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0608789A FR2906903B1 (fr) 2006-10-06 2006-10-06 Circuit electronique de reference de tension.
PCT/EP2007/060624 WO2008040817A1 (fr) 2006-10-06 2007-10-05 Circuit electronique de reference de tension

Publications (1)

Publication Number Publication Date
ATE475925T1 true ATE475925T1 (de) 2010-08-15

Family

ID=37909068

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07820997T ATE475925T1 (de) 2006-10-06 2007-10-05 Spannungsreferenz-elektronikschaltung

Country Status (6)

Country Link
US (1) US20100007324A1 (de)
EP (1) EP2067090B1 (de)
AT (1) ATE475925T1 (de)
DE (1) DE602007008115D1 (de)
FR (1) FR2906903B1 (de)
WO (1) WO2008040817A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2975510B1 (fr) * 2011-05-17 2013-05-03 St Microelectronics Rousset Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation
FR2975512B1 (fr) * 2011-05-17 2013-05-10 St Microelectronics Rousset Procede et dispositif de generation d'une tension de reference ajustable de bande interdite
CN103026311B (zh) * 2011-05-20 2015-11-25 松下知识产权经营株式会社 基准电压生成电路及基准电压源
JP6242274B2 (ja) * 2014-04-14 2017-12-06 ルネサスエレクトロニクス株式会社 バンドギャップリファレンス回路及びそれを備えた半導体装置
US9864389B1 (en) * 2016-11-10 2018-01-09 Analog Devices Global Temperature compensated reference voltage circuit
US11740281B2 (en) 2018-01-08 2023-08-29 Proteantecs Ltd. Integrated circuit degradation estimation and time-of-failure prediction using workload and margin sensing
US11068011B2 (en) * 2019-10-30 2021-07-20 Taiwan Semiconductor Manufacturing Company Ltd. Signal generating device and method of generating temperature-dependent signal
DE102021112735B3 (de) 2021-05-17 2022-08-04 Infineon Technologies Ag Bandabstandsreferenz-schaltung
US11619551B1 (en) * 2022-01-27 2023-04-04 Proteantecs Ltd. Thermal sensor for integrated circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391980A (en) * 1993-06-16 1995-02-21 Texas Instruments Incorporated Second order low temperature coefficient bandgap voltage supply
US5629612A (en) * 1996-03-12 1997-05-13 Maxim Integrated Products, Inc. Methods and apparatus for improving temperature drift of references
US6255807B1 (en) * 2000-10-18 2001-07-03 Texas Instruments Tucson Corporation Bandgap reference curvature compensation circuit
US20030117120A1 (en) * 2001-12-21 2003-06-26 Amazeen Bruce E. CMOS bandgap refrence with built-in curvature correction
US7088085B2 (en) * 2003-07-03 2006-08-08 Analog-Devices, Inc. CMOS bandgap current and voltage generator
US7091713B2 (en) * 2004-04-30 2006-08-15 Integration Associates Inc. Method and circuit for generating a higher order compensated bandgap voltage
US7486065B2 (en) * 2005-02-07 2009-02-03 Via Technologies, Inc. Reference voltage generator and method for generating a bias-insensitive reference voltage
TWI256725B (en) * 2005-06-10 2006-06-11 Uli Electronics Inc Bandgap reference circuit

Also Published As

Publication number Publication date
US20100007324A1 (en) 2010-01-14
EP2067090B1 (de) 2010-07-28
FR2906903B1 (fr) 2009-02-20
DE602007008115D1 (de) 2010-09-09
WO2008040817A1 (fr) 2008-04-10
FR2906903A1 (fr) 2008-04-11
EP2067090A1 (de) 2009-06-10

Similar Documents

Publication Publication Date Title
ATE475925T1 (de) Spannungsreferenz-elektronikschaltung
US9977111B2 (en) Reference voltage temperature coefficient calibration circuit and method
TW200715091A (en) Bandgap reference circuit
Fayomi et al. Sub 1 V CMOS bandgap reference design techniques: a survey
US9459647B2 (en) Bandgap reference circuit and bandgap reference current source with two operational amplifiers for generating zero temperature correlated current
TW200629033A (en) Low voltage bandgap reference (BGR) circuit
US20110057718A1 (en) Apparatus and method for offset drift trimming
US8723595B1 (en) Voltage generator
US9141124B1 (en) Bandgap reference circuit
CN102981545A (zh) 一种高阶曲率补偿的带隙基准电压电路
US20100214013A1 (en) Reference signal generating circuit
Lee Low voltage CMOS bandgap references with temperature compensated reference current output
US7944272B2 (en) Constant current circuit
CN108052151B (zh) 一种无嵌位运放的带隙基准电压源
US20130249525A1 (en) Voltage reference circuit
US7609044B2 (en) Current generator
WO2006051486A3 (en) All npn-transistor ptat current source
JP2013058155A (ja) 基準電圧回路
JP4676177B2 (ja) バンドギャップ型基準電圧発生回路
RU2473951C1 (ru) Источник опорного напряжения
GR1007247B (el) Ολοκληρωμενο κυκλωμα γεννητριας συνεχους τασης αναφορας με ταση τροφοδοσιας υπο-1v
US20130106393A1 (en) Bandgap reference voltage generator
Zhang et al. A resistor-less bandgap reference with improved PTAT generator for ultra-low-power LSIs
US9176514B2 (en) Reference voltage generator circuits and integrated circuits having the same reference voltage generator circuits
RU2447477C1 (ru) Источник опорного напряжения

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties