FR2975510B1 - Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation - Google Patents

Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation

Info

Publication number
FR2975510B1
FR2975510B1 FR1154266A FR1154266A FR2975510B1 FR 2975510 B1 FR2975510 B1 FR 2975510B1 FR 1154266 A FR1154266 A FR 1154266A FR 1154266 A FR1154266 A FR 1154266A FR 2975510 B1 FR2975510 B1 FR 2975510B1
Authority
FR
France
Prior art keywords
adjustable
generating
reference voltage
high feed
band reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1154266A
Other languages
English (en)
Other versions
FR2975510A1 (fr
Inventor
Jimmy Fort
Thierry Soude
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1154266A priority Critical patent/FR2975510B1/fr
Priority to CN201210160926.8A priority patent/CN102789260B/zh
Priority to US13/472,750 priority patent/US8952675B2/en
Priority to CN2012202293408U priority patent/CN202677242U/zh
Publication of FR2975510A1 publication Critical patent/FR2975510A1/fr
Application granted granted Critical
Publication of FR2975510B1 publication Critical patent/FR2975510B1/fr
Priority to US14/616,481 priority patent/US9298202B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/625Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
FR1154266A 2011-05-17 2011-05-17 Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation Expired - Fee Related FR2975510B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1154266A FR2975510B1 (fr) 2011-05-17 2011-05-17 Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation
CN201210160926.8A CN102789260B (zh) 2011-05-17 2012-05-16 具有大电源抑制比的用于生成可调带隙参考电压的设备
US13/472,750 US8952675B2 (en) 2011-05-17 2012-05-16 Device for generating an adjustable bandgap reference voltage with large power supply rejection rate
CN2012202293408U CN202677242U (zh) 2011-05-17 2012-05-16 用于生成可调带隙参考电压的设备和集成电路
US14/616,481 US9298202B2 (en) 2011-05-17 2015-02-06 Device for generating an adjustable bandgap reference voltage with large power supply rejection rate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1154266A FR2975510B1 (fr) 2011-05-17 2011-05-17 Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation

Publications (2)

Publication Number Publication Date
FR2975510A1 FR2975510A1 (fr) 2012-11-23
FR2975510B1 true FR2975510B1 (fr) 2013-05-03

Family

ID=44741422

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1154266A Expired - Fee Related FR2975510B1 (fr) 2011-05-17 2011-05-17 Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation

Country Status (3)

Country Link
US (2) US8952675B2 (fr)
CN (2) CN102789260B (fr)
FR (1) FR2975510B1 (fr)

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FR2975510B1 (fr) * 2011-05-17 2013-05-03 St Microelectronics Rousset Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation
FR2975512B1 (fr) 2011-05-17 2013-05-10 St Microelectronics Rousset Procede et dispositif de generation d'une tension de reference ajustable de bande interdite
CN103345290B (zh) * 2013-07-24 2014-10-15 东南大学 一种高电源抑制、低工艺偏差带隙基准电压源
US10175272B2 (en) * 2014-08-26 2019-01-08 Intersil Americas LLC Remote differential voltage sensing
CN106959716B (zh) * 2016-01-12 2019-08-27 中芯国际集成电路制造(上海)有限公司 参考电压发生装置
US9641141B1 (en) 2016-02-29 2017-05-02 Hong Kong Applied Science and Technology Research Institute Company Limited Harmonics suppression circuit for a switch-mode power amplifier
FR3058568A1 (fr) 2016-11-09 2018-05-11 STMicroelectronics (Alps) SAS Attenuation de la composante non lineaire d'une tension de bande interdite
KR102347178B1 (ko) * 2017-07-19 2022-01-04 삼성전자주식회사 기준 전압 회로를 포함하는 단말 장치
CN107918432B (zh) * 2017-12-29 2023-07-04 上海智浦欣微电子有限公司 一种高电源抑制比基准电压源
CN107992142B (zh) * 2017-12-29 2023-07-18 上海智浦欣微电子有限公司 一种高电源抑制比ptat电流源
IT201900022518A1 (it) 2019-11-29 2021-05-29 St Microelectronics Srl Circuito di riferimento bandgap, dispositivo e uso corrispondenti
TWI719809B (zh) * 2020-01-20 2021-02-21 瑞昱半導體股份有限公司 溫度感測電路
CN113867465B (zh) * 2021-10-13 2022-10-14 辽宁大学 一种用于片内可调节带宽的ldo模块
TWI792977B (zh) * 2022-04-11 2023-02-11 立錡科技股份有限公司 具有高次溫度補償功能的參考訊號產生電路
CN117833842B (zh) * 2024-03-06 2024-05-14 中国电子科技集团公司第五十八研究所 一种具有增益温度补偿的差分cascode结构射频驱动放大器

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JP3586073B2 (ja) * 1997-07-29 2004-11-10 株式会社東芝 基準電圧発生回路
US6002243A (en) * 1998-09-02 1999-12-14 Texas Instruments Incorporated MOS circuit stabilization of bipolar current mirror collector voltages
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US7057444B2 (en) * 2003-09-22 2006-06-06 Standard Microsystems Corporation Amplifier with accurate built-in threshold
US7199646B1 (en) * 2003-09-23 2007-04-03 Cypress Semiconductor Corp. High PSRR, high accuracy, low power supply bandgap circuit
US7224209B2 (en) * 2005-03-03 2007-05-29 Etron Technology, Inc. Speed-up circuit for initiation of proportional to absolute temperature biasing circuits
US20060261882A1 (en) * 2005-05-17 2006-11-23 Phillip Johnson Bandgap generator providing low-voltage operation
EP1727016A1 (fr) * 2005-05-24 2006-11-29 Emma Mixed Signal C.V. Générateur de tension de référence.
GB0519987D0 (en) 2005-09-30 2005-11-09 Texas Instruments Ltd Band-gap voltage reference circuit
US7236048B1 (en) * 2005-11-22 2007-06-26 National Semiconductor Corporation Self-regulating process-error trimmable PTAT current source
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JP4866158B2 (ja) * 2006-06-20 2012-02-01 富士通セミコンダクター株式会社 レギュレータ回路
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FR2906903B1 (fr) * 2006-10-06 2009-02-20 E2V Semiconductors Soc Par Act Circuit electronique de reference de tension.
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US7705662B2 (en) * 2008-09-25 2010-04-27 Hong Kong Applied Science And Technology Research Institute Co., Ltd Low voltage high-output-driving CMOS voltage reference with temperature compensation
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JP4837111B2 (ja) * 2009-03-02 2011-12-14 株式会社半導体理工学研究センター 基準電流源回路
US20110267133A1 (en) * 2010-04-30 2011-11-03 Ajay Kumar Current generating circuit
US8558530B2 (en) * 2010-05-26 2013-10-15 Smsc Holdings S.A.R.L. Low power regulator
FR2975512B1 (fr) 2011-05-17 2013-05-10 St Microelectronics Rousset Procede et dispositif de generation d'une tension de reference ajustable de bande interdite
FR2975510B1 (fr) * 2011-05-17 2013-05-03 St Microelectronics Rousset Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation

Also Published As

Publication number Publication date
US8952675B2 (en) 2015-02-10
US20150153753A1 (en) 2015-06-04
US9298202B2 (en) 2016-03-29
CN102789260B (zh) 2016-01-13
CN202677242U (zh) 2013-01-16
FR2975510A1 (fr) 2012-11-23
CN102789260A (zh) 2012-11-21
US20120293149A1 (en) 2012-11-22

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Legal Events

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Effective date: 20150130