FR2975510B1 - Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation - Google Patents
Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentationInfo
- Publication number
- FR2975510B1 FR2975510B1 FR1154266A FR1154266A FR2975510B1 FR 2975510 B1 FR2975510 B1 FR 2975510B1 FR 1154266 A FR1154266 A FR 1154266A FR 1154266 A FR1154266 A FR 1154266A FR 2975510 B1 FR2975510 B1 FR 2975510B1
- Authority
- FR
- France
- Prior art keywords
- adjustable
- generating
- reference voltage
- high feed
- band reference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1154266A FR2975510B1 (fr) | 2011-05-17 | 2011-05-17 | Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation |
CN201210160926.8A CN102789260B (zh) | 2011-05-17 | 2012-05-16 | 具有大电源抑制比的用于生成可调带隙参考电压的设备 |
US13/472,750 US8952675B2 (en) | 2011-05-17 | 2012-05-16 | Device for generating an adjustable bandgap reference voltage with large power supply rejection rate |
CN2012202293408U CN202677242U (zh) | 2011-05-17 | 2012-05-16 | 用于生成可调带隙参考电压的设备和集成电路 |
US14/616,481 US9298202B2 (en) | 2011-05-17 | 2015-02-06 | Device for generating an adjustable bandgap reference voltage with large power supply rejection rate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1154266A FR2975510B1 (fr) | 2011-05-17 | 2011-05-17 | Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2975510A1 FR2975510A1 (fr) | 2012-11-23 |
FR2975510B1 true FR2975510B1 (fr) | 2013-05-03 |
Family
ID=44741422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1154266A Expired - Fee Related FR2975510B1 (fr) | 2011-05-17 | 2011-05-17 | Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation |
Country Status (3)
Country | Link |
---|---|
US (2) | US8952675B2 (fr) |
CN (2) | CN102789260B (fr) |
FR (1) | FR2975510B1 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2975510B1 (fr) * | 2011-05-17 | 2013-05-03 | St Microelectronics Rousset | Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation |
FR2975512B1 (fr) | 2011-05-17 | 2013-05-10 | St Microelectronics Rousset | Procede et dispositif de generation d'une tension de reference ajustable de bande interdite |
CN103345290B (zh) * | 2013-07-24 | 2014-10-15 | 东南大学 | 一种高电源抑制、低工艺偏差带隙基准电压源 |
US10175272B2 (en) * | 2014-08-26 | 2019-01-08 | Intersil Americas LLC | Remote differential voltage sensing |
CN106959716B (zh) * | 2016-01-12 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | 参考电压发生装置 |
US9641141B1 (en) | 2016-02-29 | 2017-05-02 | Hong Kong Applied Science and Technology Research Institute Company Limited | Harmonics suppression circuit for a switch-mode power amplifier |
FR3058568A1 (fr) | 2016-11-09 | 2018-05-11 | STMicroelectronics (Alps) SAS | Attenuation de la composante non lineaire d'une tension de bande interdite |
KR102347178B1 (ko) * | 2017-07-19 | 2022-01-04 | 삼성전자주식회사 | 기준 전압 회로를 포함하는 단말 장치 |
CN107918432B (zh) * | 2017-12-29 | 2023-07-04 | 上海智浦欣微电子有限公司 | 一种高电源抑制比基准电压源 |
CN107992142B (zh) * | 2017-12-29 | 2023-07-18 | 上海智浦欣微电子有限公司 | 一种高电源抑制比ptat电流源 |
IT201900022518A1 (it) | 2019-11-29 | 2021-05-29 | St Microelectronics Srl | Circuito di riferimento bandgap, dispositivo e uso corrispondenti |
TWI719809B (zh) * | 2020-01-20 | 2021-02-21 | 瑞昱半導體股份有限公司 | 溫度感測電路 |
CN113867465B (zh) * | 2021-10-13 | 2022-10-14 | 辽宁大学 | 一种用于片内可调节带宽的ldo模块 |
TWI792977B (zh) * | 2022-04-11 | 2023-02-11 | 立錡科技股份有限公司 | 具有高次溫度補償功能的參考訊號產生電路 |
CN117833842B (zh) * | 2024-03-06 | 2024-05-14 | 中国电子科技集团公司第五十八研究所 | 一种具有增益温度补偿的差分cascode结构射频驱动放大器 |
Family Cites Families (31)
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US5336986A (en) * | 1992-02-07 | 1994-08-09 | Crosspoint Solutions, Inc. | Voltage regulator for field programmable gate arrays |
JP3586073B2 (ja) * | 1997-07-29 | 2004-11-10 | 株式会社東芝 | 基準電圧発生回路 |
US6002243A (en) * | 1998-09-02 | 1999-12-14 | Texas Instruments Incorporated | MOS circuit stabilization of bipolar current mirror collector voltages |
US6016051A (en) * | 1998-09-30 | 2000-01-18 | National Semiconductor Corporation | Bandgap reference voltage circuit with PTAT current source |
US6002244A (en) * | 1998-11-17 | 1999-12-14 | Impala Linear Corporation | Temperature monitoring circuit with thermal hysteresis |
GB2393867B (en) * | 2002-10-01 | 2006-09-20 | Wolfson Ltd | Temperature sensing apparatus and methods |
US7057444B2 (en) * | 2003-09-22 | 2006-06-06 | Standard Microsystems Corporation | Amplifier with accurate built-in threshold |
US7199646B1 (en) * | 2003-09-23 | 2007-04-03 | Cypress Semiconductor Corp. | High PSRR, high accuracy, low power supply bandgap circuit |
US7224209B2 (en) * | 2005-03-03 | 2007-05-29 | Etron Technology, Inc. | Speed-up circuit for initiation of proportional to absolute temperature biasing circuits |
US20060261882A1 (en) * | 2005-05-17 | 2006-11-23 | Phillip Johnson | Bandgap generator providing low-voltage operation |
EP1727016A1 (fr) * | 2005-05-24 | 2006-11-29 | Emma Mixed Signal C.V. | Générateur de tension de référence. |
GB0519987D0 (en) | 2005-09-30 | 2005-11-09 | Texas Instruments Ltd | Band-gap voltage reference circuit |
US7236048B1 (en) * | 2005-11-22 | 2007-06-26 | National Semiconductor Corporation | Self-regulating process-error trimmable PTAT current source |
CN100489726C (zh) * | 2006-03-24 | 2009-05-20 | 智原科技股份有限公司 | 低供应电压的能隙参考电路与供应能隙参考电流的方法 |
JP4866158B2 (ja) * | 2006-06-20 | 2012-02-01 | 富士通セミコンダクター株式会社 | レギュレータ回路 |
KR100780771B1 (ko) * | 2006-06-30 | 2007-11-29 | 주식회사 하이닉스반도체 | 밴드-갭 기준 전압 발생 장치 |
US7579898B2 (en) * | 2006-07-31 | 2009-08-25 | Freescale Semiconductor, Inc. | Temperature sensor device and methods thereof |
FR2906903B1 (fr) * | 2006-10-06 | 2009-02-20 | E2V Semiconductors Soc Par Act | Circuit electronique de reference de tension. |
TW200819949A (en) * | 2006-10-19 | 2008-05-01 | Faraday Tech Corp | Supply-independent biasing circuit |
US7915882B2 (en) * | 2007-09-17 | 2011-03-29 | Texas Instruments Incorporated | Start-up circuit and method for a self-biased zero-temperature-coefficient current reference |
US7880533B2 (en) * | 2008-03-25 | 2011-02-01 | Analog Devices, Inc. | Bandgap voltage reference circuit |
US7902912B2 (en) * | 2008-03-25 | 2011-03-08 | Analog Devices, Inc. | Bias current generator |
US7750728B2 (en) * | 2008-03-25 | 2010-07-06 | Analog Devices, Inc. | Reference voltage circuit |
US7705662B2 (en) * | 2008-09-25 | 2010-04-27 | Hong Kong Applied Science And Technology Research Institute Co., Ltd | Low voltage high-output-driving CMOS voltage reference with temperature compensation |
KR101036925B1 (ko) * | 2008-12-26 | 2011-05-25 | 주식회사 하이닉스반도체 | 밴드갭 회로 및 이를 포함하는 온도 감지회로 |
US7944271B2 (en) * | 2009-02-10 | 2011-05-17 | Standard Microsystems Corporation | Temperature and supply independent CMOS current source |
JP4837111B2 (ja) * | 2009-03-02 | 2011-12-14 | 株式会社半導体理工学研究センター | 基準電流源回路 |
US20110267133A1 (en) * | 2010-04-30 | 2011-11-03 | Ajay Kumar | Current generating circuit |
US8558530B2 (en) * | 2010-05-26 | 2013-10-15 | Smsc Holdings S.A.R.L. | Low power regulator |
FR2975512B1 (fr) | 2011-05-17 | 2013-05-10 | St Microelectronics Rousset | Procede et dispositif de generation d'une tension de reference ajustable de bande interdite |
FR2975510B1 (fr) * | 2011-05-17 | 2013-05-03 | St Microelectronics Rousset | Dispositif de generation d'une tension de reference de bande interdite ajustable a fort taux de rejection d'alimentation |
-
2011
- 2011-05-17 FR FR1154266A patent/FR2975510B1/fr not_active Expired - Fee Related
-
2012
- 2012-05-16 CN CN201210160926.8A patent/CN102789260B/zh active Active
- 2012-05-16 CN CN2012202293408U patent/CN202677242U/zh not_active Withdrawn - After Issue
- 2012-05-16 US US13/472,750 patent/US8952675B2/en active Active
-
2015
- 2015-02-06 US US14/616,481 patent/US9298202B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8952675B2 (en) | 2015-02-10 |
US20150153753A1 (en) | 2015-06-04 |
US9298202B2 (en) | 2016-03-29 |
CN102789260B (zh) | 2016-01-13 |
CN202677242U (zh) | 2013-01-16 |
FR2975510A1 (fr) | 2012-11-23 |
CN102789260A (zh) | 2012-11-21 |
US20120293149A1 (en) | 2012-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20150130 |