ATE331225T1 - Megnetfeldaufnehmer - Google Patents

Megnetfeldaufnehmer

Info

Publication number
ATE331225T1
ATE331225T1 AT01925705T AT01925705T ATE331225T1 AT E331225 T1 ATE331225 T1 AT E331225T1 AT 01925705 T AT01925705 T AT 01925705T AT 01925705 T AT01925705 T AT 01925705T AT E331225 T1 ATE331225 T1 AT E331225T1
Authority
AT
Austria
Prior art keywords
magnetic field
sensor
provides
field recorders
operative
Prior art date
Application number
AT01925705T
Other languages
English (en)
Inventor
Timothy Ashley
Charles Thomas Elliott
Timothy Jonathan Phillips
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Application granted granted Critical
Publication of ATE331225T1 publication Critical patent/ATE331225T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1171—Magnetic recording head with defined laminate structural detail
    • Y10T428/1186—Magnetic recording head with defined laminate structural detail with head pole component

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Dental Preparations (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Reinforced Plastic Materials (AREA)
AT01925705T 2000-05-19 2001-05-02 Megnetfeldaufnehmer ATE331225T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0012014A GB2362505A (en) 2000-05-19 2000-05-19 Magnetic Field Sensor

Publications (1)

Publication Number Publication Date
ATE331225T1 true ATE331225T1 (de) 2006-07-15

Family

ID=9891854

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01925705T ATE331225T1 (de) 2000-05-19 2001-05-02 Megnetfeldaufnehmer

Country Status (14)

Country Link
US (1) US6809514B2 (de)
EP (1) EP1287371B1 (de)
JP (1) JP4896338B2 (de)
KR (1) KR100789119B1 (de)
CN (1) CN1311241C (de)
AT (1) ATE331225T1 (de)
AU (1) AU2001252389A1 (de)
DE (1) DE60120966T2 (de)
GB (1) GB2362505A (de)
HK (1) HK1055331A1 (de)
MY (1) MY124817A (de)
RU (1) RU2238571C2 (de)
TW (1) TWI243254B (de)
WO (1) WO2001088561A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3955195B2 (ja) * 2001-08-24 2007-08-08 株式会社日立グローバルストレージテクノロジーズ 磁界センサー及び磁気ヘッド
CN100367526C (zh) * 2001-10-01 2008-02-06 旭化成电子材料元件株式会社 霍尔器件和磁传感器
JP4653397B2 (ja) * 2002-01-15 2011-03-16 旭化成エレクトロニクス株式会社 ホール素子の製造方法
US6903429B2 (en) * 2003-04-15 2005-06-07 Honeywell International, Inc. Magnetic sensor integrated with CMOS
EP1620742A2 (de) * 2003-04-28 2006-02-01 Knowles Electronics, LLC System und verfahren zur messung eines magnetfelds
JP4589410B2 (ja) * 2005-12-16 2010-12-01 旭化成エレクトロニクス株式会社 位置検出装置
US7847536B2 (en) * 2006-08-31 2010-12-07 Itron, Inc. Hall sensor with temperature drift control
CN100554899C (zh) * 2007-12-07 2009-10-28 中国科学院安徽光学精密机械研究所 锑化铟光电传感器阵列静态工作点自动校准装置
US7772661B2 (en) * 2008-07-23 2010-08-10 Honeywell International Inc. Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
US8000062B2 (en) 2008-12-30 2011-08-16 Hitachi Global Storage Technologies Netherlands B.V. Enhanced magnetoresistance and localized sensitivity by gating in lorentz magnetoresistors
TWI462090B (zh) * 2010-12-15 2014-11-21 Seagate Technology Llc 帶有磁性層和非磁性層之磁感測器種子層的磁感測器及其製法
CN102236736B (zh) * 2011-07-08 2012-11-28 南京邮电大学 一种十字形cmos集成霍尔磁传感器的电路模型的仿真方法
US8922206B2 (en) * 2011-09-07 2014-12-30 Allegro Microsystems, Llc Magnetic field sensing element combining a circular vertical hall magnetic field sensing element with a planar hall element
ITTO20120614A1 (it) * 2012-07-11 2014-01-12 St Microelectronics Srl Sensore magnetoresistivo integrato multistrato e relativo metodo di fabbricazione
TWI457583B (zh) * 2012-11-02 2014-10-21 Univ Nat Kaohsiung Applied Sci Three - axis magnetic field sensing device with magnetic flux guide
FI124670B (en) * 2013-05-16 2014-11-28 Lev M Baskin Device for detecting magnetic fields
FR3006501A1 (fr) * 2013-05-30 2014-12-05 St Microelectronics Sa Capteur integre a effet hall
JP5968372B2 (ja) * 2014-07-17 2016-08-10 学校法人 龍谷大学 磁場センサー
CN111896897B (zh) * 2015-01-12 2024-02-09 赫尔穆特.惠得利 用于引导载流子的设备和其应用
TWI627427B (zh) * 2015-12-29 2018-06-21 愛盛科技股份有限公司 磁場感測裝置及其感測方法
CN107037381A (zh) 2015-12-29 2017-08-11 爱盛科技股份有限公司 磁场感测装置及其感测方法
US10760981B2 (en) * 2016-11-18 2020-09-01 Asahi Kasei Microdevices Corporation Hall sensor
JP7015087B2 (ja) 2017-03-23 2022-02-02 旭化成エレクトロニクス株式会社 ホール素子
FR3068512B1 (fr) * 2017-06-28 2019-08-16 Centre National De La Recherche Scientifique Transistor a effet de champ a gaz d'electrons bidimensionnel, composant et procedes associes
RU181345U1 (ru) * 2017-08-02 2018-07-11 Федеральное Государственное Казенное "Военное Образовательное Учреждение Высшего Образования "Военный Учебно-Научный Центр Сухопутных Войск "Общевойсковая Академия Вооруженных Сил Российской Федерации" Реле стартер-генератора с контролем параметров
CN107966669B (zh) * 2017-12-19 2019-11-08 大连理工大学 适用于高温工作环境的半导体三维霍尔传感器及其制作方法
CN109270476A (zh) * 2018-11-08 2019-01-25 福州大学 一种应用于三维霍尔传感器的霍尔器件及其方法
CN110416403A (zh) * 2019-08-08 2019-11-05 南开大学 霍尔元件芯片及其制作方法
RU195271U1 (ru) * 2019-11-25 2020-01-21 федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" Арсенид-галлиевый магнитоэлектрический диод
CN111416035B (zh) * 2020-03-26 2023-02-07 中国科学院微电子研究所 非易失霍尔传感器及其制造方法、测试方法
CN111864056A (zh) * 2020-07-21 2020-10-30 浙江大学 一种铝掺锑化铟薄膜、磁阻传感元件及其制造方法
CN112259679A (zh) * 2020-10-21 2021-01-22 佛山中科芯蔚科技有限公司 一种霍尔传感器及其制作方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356984A (en) * 1976-11-01 1978-05-23 Hitachi Ltd Hall element
JPS5696886A (en) * 1979-11-29 1981-08-05 Sony Corp Magnetism sensitive element
CH668146A5 (de) * 1985-05-22 1988-11-30 Landis & Gyr Ag Einrichtung mit einem hallelement in integrierter halbleitertechnologie.
CN1022348C (zh) * 1987-12-25 1993-10-06 夏普公司 超导磁阻器件
US4843444A (en) * 1988-04-14 1989-06-27 General Motors Corporation Magnetic field sensor
US4900687A (en) * 1988-04-14 1990-02-13 General Motors Corporation Process for forming a magnetic field sensor
US4926226A (en) * 1988-09-06 1990-05-15 General Motors Corporation Magnetic field sensors
CA1303246C (en) * 1988-12-23 1992-06-09 Dale Lee Partin Magnetoresistor with accumulation layer
US5184106A (en) * 1991-01-28 1993-02-02 General Motors Corporation Magnetic field sensor with improved electron mobility
US5153557A (en) * 1991-01-28 1992-10-06 General Motors Corporation Magnetic field sensor contacts
JP3025035B2 (ja) * 1991-02-01 2000-03-27 日本碍子株式会社 配電線路の保護システム
US5453727A (en) * 1991-07-16 1995-09-26 Asahi Kasai Kogyo Kabushiki Kaisha Semiconductor sensors and method for fabricating the same
US5173758A (en) * 1991-10-28 1992-12-22 General Motors Corporation Hall generator with four arms
US5314547A (en) * 1992-09-28 1994-05-24 General Motors Corporation Rare earth slab doping of group III-V compounds
US5883564A (en) * 1994-04-18 1999-03-16 General Motors Corporation Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer
EP0678925A1 (de) * 1994-04-18 1995-10-25 General Motors Corporation Magnetfeldsensor
US5491461A (en) * 1994-05-09 1996-02-13 General Motors Corporation Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
JPH08102563A (ja) * 1994-08-02 1996-04-16 Toshiba Corp 半導体ホール素子
JPH0888425A (ja) * 1994-09-19 1996-04-02 Fujitsu Ltd ホール効果磁気センサおよび薄膜磁気ヘッド

Also Published As

Publication number Publication date
WO2001088561A1 (en) 2001-11-22
MY124817A (en) 2006-07-31
AU2001252389A1 (en) 2001-11-26
JP4896338B2 (ja) 2012-03-14
EP1287371B1 (de) 2006-06-21
TWI243254B (en) 2005-11-11
KR100789119B1 (ko) 2007-12-28
JP2003533894A (ja) 2003-11-11
HK1055331A1 (en) 2004-01-02
DE60120966D1 (de) 2006-08-03
RU2238571C2 (ru) 2004-10-20
US20030094943A1 (en) 2003-05-22
CN1429342A (zh) 2003-07-09
KR20030034075A (ko) 2003-05-01
CN1311241C (zh) 2007-04-18
US6809514B2 (en) 2004-10-26
DE60120966T2 (de) 2007-01-04
GB0012014D0 (en) 2000-07-05
EP1287371A1 (de) 2003-03-05
GB2362505A (en) 2001-11-21

Similar Documents

Publication Publication Date Title
ATE331225T1 (de) Megnetfeldaufnehmer
DE60045056D1 (de) Vorrichtung zur Gaskonzentrationsmessung mit Fehlerkompensation des Ausgangssignals
SE0501777L (sv) Mätförfarande och mätanordning
BR0102593A (pt) Dispositivo para determinar posição angular absoluta de elemento giratório
DE50015183D1 (de) Em positionsgeber
TW200624785A (en) Time-temperature indicating device
ATE370430T1 (de) Vorrichtung zur bestimmung der position und des verstärkungsfaktors
ATE288079T1 (de) Techniken und systeme zum nachweis von analyten
FR2786266B1 (fr) Capteur de position a sonde de hall
BR0107434A (pt) Método e aparelho para isolamento ativo em detectores de circuito completo indutivo
ATE474230T1 (de) Messprobe und damit ausgestattete authentifikationsvorrichtung
DE60137748D1 (de) Analysesystem zur Feststellung der Stickstoffkonzentration mit hoher Genauigkeit
ATE298879T1 (de) Lagerung für ein koordinatenmessgerät
WO2007053519A3 (en) Non-destructive evaluation via measurement of magnetic drag force
SE9900015D0 (sv) Lägesgivare
ATE416380T1 (de) Detektor für magnetische permeabilität mit driftkompensation
DE59405865D1 (de) Positionsmelder für die automation
ATE513226T1 (de) Messvorrichtung mit spinning-current-hallsensor
DE59802990D1 (de) Magnetfeldkompensierte sensoranordnung zur kraftmessung mit hall- oder feldeffektelementen
ATE341761T1 (de) Beschleunigungsmessvorrichtung
FR2801970B1 (fr) Capteur magnetique de tres haute sensibilite
SE0500067L (sv) Sätt att detektera koherenta strålkällor och anordning som utnyttjar sättet
ATE483950T1 (de) Vorrichtung zum vermessen der dicke und/oder länge von objekten
DE59303887D1 (de) Messanordnung zur berürungslosen drehzahlerfassung
EP1650564A4 (de) Mechanochemischer typensensor

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties