AU2001252389A1 - Magnetic field sensor - Google Patents

Magnetic field sensor

Info

Publication number
AU2001252389A1
AU2001252389A1 AU2001252389A AU5238901A AU2001252389A1 AU 2001252389 A1 AU2001252389 A1 AU 2001252389A1 AU 2001252389 A AU2001252389 A AU 2001252389A AU 5238901 A AU5238901 A AU 5238901A AU 2001252389 A1 AU2001252389 A1 AU 2001252389A1
Authority
AU
Australia
Prior art keywords
magnetic field
sensor
field sensor
provides
operative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001252389A
Inventor
Timothy Ashley
Charles Thomas Elliott
Timothy Jonathan Phillips
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of AU2001252389A1 publication Critical patent/AU2001252389A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1171—Magnetic recording head with defined laminate structural detail
    • Y10T428/1186—Magnetic recording head with defined laminate structural detail with head pole component

Abstract

The invention provides a Hall effect magnetic field sensor (10, 50) including carrier excluding or extracting means (36, 66) for reducing an intrinsic contribution to carrier concentration in the active region (14e, 53c) to provide for the sensor to be operative in an extrinsic saturated regime. This provides an advantage that magnetic field measurement sensitivity of the sensor (10, 50) can be made substantially insensitive to sensor temperature thereby improving measurement accuracy.
AU2001252389A 2000-05-19 2001-05-02 Magnetic field sensor Abandoned AU2001252389A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0012014 2000-05-19
GB0012014A GB2362505A (en) 2000-05-19 2000-05-19 Magnetic Field Sensor
PCT/GB2001/001923 WO2001088561A1 (en) 2000-05-19 2001-05-02 Magnetic field sensor

Publications (1)

Publication Number Publication Date
AU2001252389A1 true AU2001252389A1 (en) 2001-11-26

Family

ID=9891854

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001252389A Abandoned AU2001252389A1 (en) 2000-05-19 2001-05-02 Magnetic field sensor

Country Status (14)

Country Link
US (1) US6809514B2 (en)
EP (1) EP1287371B1 (en)
JP (1) JP4896338B2 (en)
KR (1) KR100789119B1 (en)
CN (1) CN1311241C (en)
AT (1) ATE331225T1 (en)
AU (1) AU2001252389A1 (en)
DE (1) DE60120966T2 (en)
GB (1) GB2362505A (en)
HK (1) HK1055331A1 (en)
MY (1) MY124817A (en)
RU (1) RU2238571C2 (en)
TW (1) TWI243254B (en)
WO (1) WO2001088561A1 (en)

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EP1469531A4 (en) * 2002-01-15 2007-07-18 Asahi Kasei Denshi Kk Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
US6903429B2 (en) * 2003-04-15 2005-06-07 Honeywell International, Inc. Magnetic sensor integrated with CMOS
US6960816B2 (en) * 2003-04-28 2005-11-01 Knowles Electronics, Llc. System and method for sensing a magnetic field
WO2007069680A1 (en) * 2005-12-16 2007-06-21 Asahi Kasei Emd Corporation Position detector
US7847536B2 (en) * 2006-08-31 2010-12-07 Itron, Inc. Hall sensor with temperature drift control
CN100554899C (en) * 2007-12-07 2009-10-28 中国科学院安徽光学精密机械研究所 Lndium antimonide opto-electronic sensor array quiescent operating point auto-calibration device
US7772661B2 (en) * 2008-07-23 2010-08-10 Honeywell International Inc. Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
US8000062B2 (en) 2008-12-30 2011-08-16 Hitachi Global Storage Technologies Netherlands B.V. Enhanced magnetoresistance and localized sensitivity by gating in lorentz magnetoresistors
TWI462090B (en) * 2010-12-15 2014-11-21 Seagate Technology Llc Magnetic sensor having magnetic sensor seed layer with magnetic and nonmagnetic layers and method for preparing the same
CN102236736B (en) * 2011-07-08 2012-11-28 南京邮电大学 Circuit simulation model of crossed CMOS (complementary metal-oxide-semiconductor) integrated Hall magnetic sensor
US8922206B2 (en) * 2011-09-07 2014-12-30 Allegro Microsystems, Llc Magnetic field sensing element combining a circular vertical hall magnetic field sensing element with a planar hall element
ITTO20120614A1 (en) * 2012-07-11 2014-01-12 St Microelectronics Srl MULTILAYER INTEGRATED MAGNETORESISTIVE SENSOR AND ITS MANUFACTURING METHOD
TWI457583B (en) * 2012-11-02 2014-10-21 Univ Nat Kaohsiung Applied Sci Three - axis magnetic field sensing device with magnetic flux guide
FI124670B (en) * 2013-05-16 2014-11-28 Lev M Baskin Device for detecting a magnetic field
FR3006501A1 (en) * 2013-05-30 2014-12-05 St Microelectronics Sa INTEGRATED SENSOR WITH HALL EFFECT
JP5968372B2 (en) * 2014-07-17 2016-08-10 学校法人 龍谷大学 Magnetic field sensor
US11063200B2 (en) * 2015-01-12 2021-07-13 Helmut Weidlich Device for guiding charge carriers and use thereof
TWI627427B (en) * 2015-12-29 2018-06-21 愛盛科技股份有限公司 Magnetic field sensing apparatus and detection method thereof
CN107037381A (en) 2015-12-29 2017-08-11 爱盛科技股份有限公司 Magnetic field sensing device and sensing method thereof
US10760981B2 (en) * 2016-11-18 2020-09-01 Asahi Kasei Microdevices Corporation Hall sensor
JP7015087B2 (en) 2017-03-23 2022-02-02 旭化成エレクトロニクス株式会社 Hall element
FR3068512B1 (en) * 2017-06-28 2019-08-16 Centre National De La Recherche Scientifique TWO-DIMENSIONAL ELECTRON GAS FIELD EFFECT TRANSISTOR, COMPONENT AND RELATED METHODS
RU181345U1 (en) * 2017-08-02 2018-07-11 Федеральное Государственное Казенное "Военное Образовательное Учреждение Высшего Образования "Военный Учебно-Научный Центр Сухопутных Войск "Общевойсковая Академия Вооруженных Сил Российской Федерации" Parameter-controlled starter-generator relay
CN110376537B (en) * 2017-12-19 2020-07-24 大连理工大学 Manufacturing method of semiconductor three-dimensional Hall sensor suitable for high-temperature working environment
CN109270476A (en) * 2018-11-08 2019-01-25 福州大学 A kind of hall device and its method applied to three-dimensional Hall sensor
CN110416403A (en) * 2019-08-08 2019-11-05 南开大学 Hall element chip and preparation method thereof
RU195271U1 (en) * 2019-11-25 2020-01-21 федеральное государственное бюджетное образовательное учреждение высшего образования "Новгородский государственный университет имени Ярослава Мудрого" ARSENID-GALLIUM MAGNETOELECTRIC DIODE
CN111416035B (en) * 2020-03-26 2023-02-07 中国科学院微电子研究所 Nonvolatile Hall sensor and manufacturing method and testing method thereof
CN111864056A (en) * 2020-07-21 2020-10-30 浙江大学 Aluminum-doped indium antimonide film, magnetoresistive sensing element and manufacturing method thereof
CN112259679A (en) * 2020-10-21 2021-01-22 佛山中科芯蔚科技有限公司 Hall sensor and manufacturing method thereof

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CH668146A5 (en) * 1985-05-22 1988-11-30 Landis & Gyr Ag FURNISHING WITH A HALL ELEMENT IN INTEGRATED SEMICONDUCTOR TECHNOLOGY.
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Also Published As

Publication number Publication date
EP1287371A1 (en) 2003-03-05
WO2001088561A1 (en) 2001-11-22
MY124817A (en) 2006-07-31
CN1311241C (en) 2007-04-18
EP1287371B1 (en) 2006-06-21
KR20030034075A (en) 2003-05-01
JP2003533894A (en) 2003-11-11
GB0012014D0 (en) 2000-07-05
HK1055331A1 (en) 2004-01-02
TWI243254B (en) 2005-11-11
GB2362505A (en) 2001-11-21
CN1429342A (en) 2003-07-09
US20030094943A1 (en) 2003-05-22
KR100789119B1 (en) 2007-12-28
RU2238571C2 (en) 2004-10-20
DE60120966D1 (en) 2006-08-03
ATE331225T1 (en) 2006-07-15
JP4896338B2 (en) 2012-03-14
DE60120966T2 (en) 2007-01-04
US6809514B2 (en) 2004-10-26

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